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GB1224562A - An etching process - Google Patents

An etching process

Info

Publication number
GB1224562A
GB1224562A GB09374/68A GB1937468A GB1224562A GB 1224562 A GB1224562 A GB 1224562A GB 09374/68 A GB09374/68 A GB 09374/68A GB 1937468 A GB1937468 A GB 1937468A GB 1224562 A GB1224562 A GB 1224562A
Authority
GB
United Kingdom
Prior art keywords
layer
etched
chromium
cavity
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB09374/68A
Inventor
Hall Edward Jarman
Ernest Gerald Bylander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1224562A publication Critical patent/GB1224562A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H10P50/692—
    • H10P50/694—
    • H10W72/5522—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Weting (AREA)

Abstract

1,224,562. Etching. TEXAS INSTRUMENTS Inc. 24 April, 1968 [16 May, 1967 (2)], No. 19374/68. Heading B6J. [Also in Division H1] A cavity with a high depth to width ratio is etched in the surface of a body 10, Fig. 9, by directing an etchant fluid through an aperture 30 in a malleable mask 24a, and periodically bending the edges of the mask that extend over the cavity down into the cavity to protect the wells thereof, Fig. 14. The edges may be bent by brushing. The body 10 may comprise germanium semi-conductor material which is bonded to a degenerate semi-conductor substrate 12. The body 10 may be covered with a first chromium layer 22, a gold layer 24 and a second chromium layer 26. The layer 26 is etched through a photomask with hydrochloric acid and methyl alcohol in the presence of zinc dust to leave strips 26a, Fig. 7. The layer 24 is etched through a further photomask using potassium iodide and the layer 22 is then etched with a similar etchant to that used for layer 26. The apertures in layers 24 and 22 define aperture 30. After etching body 10 in a stream of hydrofluoric acid etching liquid, portions 24a of the gold layer are removed with potassium iodide and chromium strips 26a and the portions of the chromium layer 22a are removed with hydrochloric acid and methanol.
GB09374/68A 1967-05-16 1968-04-24 An etching process Expired GB1224562A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63891567A 1967-05-16 1967-05-16
US63891467A 1967-05-16 1967-05-16

Publications (1)

Publication Number Publication Date
GB1224562A true GB1224562A (en) 1971-03-10

Family

ID=27093208

Family Applications (1)

Application Number Title Priority Date Filing Date
GB09374/68A Expired GB1224562A (en) 1967-05-16 1968-04-24 An etching process

Country Status (4)

Country Link
DE (1) DE1771344A1 (en)
FR (1) FR1567408A (en)
GB (1) GB1224562A (en)
NL (1) NL6806905A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2206443A (en) * 1987-06-08 1989-01-05 Philips Electronic Associated A method of manufacturing a semiconductor device
EP0903780A3 (en) * 1997-09-19 1999-08-25 Texas Instruments Incorporated Method and apparatus for a wire bonded package for integrated circuits

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170348C (en) * 1970-07-10 1982-10-18 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING TO A SURFACE OF A SEMICONDUCTOR BODY AGAINST DOTTING AND AGAINST THERMAL OXIDICATION MASK MATERIAL, PRE-FRIENDLY COVERING THE WINDOWS OF THE WINDOWS IN THE MATERIALS The semiconductor body with the mask is subjected to a thermal oxidation treatment to form an oxide pattern that at least partially fills in the recesses.
US3989946A (en) * 1975-03-31 1976-11-02 Texas Instruments Incorporated Arrays for infrared image detection
FR2359511A1 (en) * 1976-07-20 1978-02-17 Philips Nv IR detector elements prodn. - uses IR sensitive plate on support with parallel channels and thickness reducing process with edge rounding step
NL7800583A (en) * 1978-01-18 1979-07-20 Philips Nv PROCESS FOR THE MANUFACTURE OF A DEVICE AND DEVICE MANUFACTURED USING THE PROCESS.
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2206443A (en) * 1987-06-08 1989-01-05 Philips Electronic Associated A method of manufacturing a semiconductor device
EP0903780A3 (en) * 1997-09-19 1999-08-25 Texas Instruments Incorporated Method and apparatus for a wire bonded package for integrated circuits

Also Published As

Publication number Publication date
DE1771344A1 (en) 1971-11-25
NL6806905A (en) 1968-11-18
FR1567408A (en) 1969-05-16

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