GB1209947A - Semiconductive elements - Google Patents
Semiconductive elementsInfo
- Publication number
- GB1209947A GB1209947A GB55119/67A GB5511967A GB1209947A GB 1209947 A GB1209947 A GB 1209947A GB 55119/67 A GB55119/67 A GB 55119/67A GB 5511967 A GB5511967 A GB 5511967A GB 1209947 A GB1209947 A GB 1209947A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- glass
- vitreous
- softening point
- pulverized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Glass Compositions (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Resistance Heating (AREA)
Abstract
1,209,947. Semiconductive elements. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 4 Dec., 1967 [7 Dec., 1966 (2)], No. 55119/67. Heading C1M. [Also in Division H1] A semiconductive element having an ohmic resistivity in the range of 10<SP>5</SP> to 10<SP>8</SP> ohm cm., comprises semi-conductive metal oxide powder of at least one of SnO 2 , TiO 2 , Sb 2 O 5 , WO 3 , Cr 2 O 3 , Fe 2 O 3 , V 2 O 5 and Bi 2 O 3 dispersed in a vitreous binding material. Pulverized insulating or dispersing agent selected from BaTiO 3 , Al 2 O 3 and SiO 2 having a higher specific resistivity than the semi-conductive material and a higher melting point than the vitreous material may be included. The elements are prepared by mixing pulverized glass whose average grain size is smaller than 1 micron with pulverized semi-conductive metal oxide whose average grain size is less than 5 microns but larger than that of the glass and stirring with a volatile liquid additive such as diacetone alcohol or octyl alcohol until the mixture acquires a sol-like state. The mixture is then applied in the form of a layer preferably by the silk-screen method to the surface of a heat resistive substrate such as iron-plate, glass, ceramics or vitreous material whose melting or softening point is higher than the softening point of the glass in the layer. The layer of mixture is heated at a temperature higher than the softening point of the glass but lower than the melting or softening point of the substrate, thus sealing the layer to the substrate. The heat expansion coefficient of the substrate is preferably approximately the same as that of the vitreous binder. In an embodiment, Fig. 1, a layer of SnO 2 , 103, contained in vitreous binder 102 is formed on the surface of an iron plate 104 which serves as an electrode. Electroconductive paint 101 is applied to the layer. The pulverized frit comprises in per cent by weight: SiO 2 : 20À01; B 2 O 3 : 28À58; ZnO: 18À33; BaO: 14À34; CaO: 0À74; MgO: 0À016; Na 2 O: 10À84; K 2 O: 4À05: TiO 2 : 2À31; Al 3 O 3 : 0À41; Fe 2 O 3 : 0-009; PbO: 0À012.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8069666 | 1966-12-07 | ||
| JP8069766 | 1966-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1209947A true GB1209947A (en) | 1970-10-21 |
Family
ID=26421669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB55119/67A Expired GB1209947A (en) | 1966-12-07 | 1967-12-04 | Semiconductive elements |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1556281A (en) |
| GB (1) | GB1209947A (en) |
| NL (1) | NL6716651A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59130401A (en) * | 1975-09-15 | 1984-07-27 | インターナショナル，レジスティブ，カンパニー，インコーポレーテッド | Electric resistor and method of producing same |
| US4986933A (en) * | 1989-03-31 | 1991-01-22 | Shoei Chemical Inc. | Resistor composition |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL162232C (en) * | 1970-03-05 | 1980-04-15 | Philips Nv | NON-LINEAR RESISTANCE ELEMENT. |
-
1967
- 1967-12-04 GB GB55119/67A patent/GB1209947A/en not_active Expired
- 1967-12-06 FR FR1556281D patent/FR1556281A/fr not_active Expired
- 1967-12-07 NL NL6716651A patent/NL6716651A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59130401A (en) * | 1975-09-15 | 1984-07-27 | インターナショナル，レジスティブ，カンパニー，インコーポレーテッド | Electric resistor and method of producing same |
| US4986933A (en) * | 1989-03-31 | 1991-01-22 | Shoei Chemical Inc. | Resistor composition |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1556281A (en) | 1969-02-07 |
| DE1646752A1 (en) | 1971-04-08 |
| DE1646752B2 (en) | 1972-06-15 |
| NL6716651A (en) | 1968-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |