GB1291441A - Methods of coating substrates with photoresists - Google Patents
Methods of coating substrates with photoresistsInfo
- Publication number
- GB1291441A GB1291441A GB4862569A GB4862569A GB1291441A GB 1291441 A GB1291441 A GB 1291441A GB 4862569 A GB4862569 A GB 4862569A GB 4862569 A GB4862569 A GB 4862569A GB 1291441 A GB1291441 A GB 1291441A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compound
- oct
- solvent
- mixture
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 4
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- 101100188552 Arabidopsis thaliana OCT3 gene Proteins 0.000 abstract 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 abstract 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- ZBBLRPRYYSJUCZ-GRHBHMESSA-L (z)-but-2-enedioate;dibutyltin(2+) Chemical compound [O-]C(=O)\C=C/C([O-])=O.CCCC[Sn+2]CCCC ZBBLRPRYYSJUCZ-GRHBHMESSA-L 0.000 abstract 1
- KSRVPHHTDYFCDN-UHFFFAOYSA-N 1,2,3-triphenyl-4-(2-phenylethenyl)benzene Chemical compound C=1C=CC=CC=1C=CC(C(=C1C=2C=CC=CC=2)C=2C=CC=CC=2)=CC=C1C1=CC=CC=C1 KSRVPHHTDYFCDN-UHFFFAOYSA-N 0.000 abstract 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 abstract 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical class CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 abstract 1
- WURBFLDFSFBTLW-UHFFFAOYSA-N benzil Chemical compound C=1C=CC=CC=1C(=O)C(=O)C1=CC=CC=C1 WURBFLDFSFBTLW-UHFFFAOYSA-N 0.000 abstract 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 abstract 1
- 239000012965 benzophenone Substances 0.000 abstract 1
- 229940114081 cinnamate Drugs 0.000 abstract 1
- CVEQRUADOXXBRI-UHFFFAOYSA-N cyclopentadienylthallium Chemical compound [Tl+].C=1C=C[CH-]C=1 CVEQRUADOXXBRI-UHFFFAOYSA-N 0.000 abstract 1
- FFKSUTHTFIDTNU-UHFFFAOYSA-N dibutyl-bis(ethenyl)stannane Chemical compound CCCC[Sn](C=C)(C=C)CCCC FFKSUTHTFIDTNU-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- JUISPCSEIXBMNI-UHFFFAOYSA-N tetracyclohexylstannane Chemical compound C1CCCCC1[Sn](C1CCCCC1)(C1CCCCC1)C1CCCCC1 JUISPCSEIXBMNI-UHFFFAOYSA-N 0.000 abstract 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical compound C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 abstract 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 abstract 1
- BPLUKJNHPBNVQL-UHFFFAOYSA-N triphenylarsine Chemical compound C1=CC=CC=C1[As](C=1C=CC=CC=1)C1=CC=CC=C1 BPLUKJNHPBNVQL-UHFFFAOYSA-N 0.000 abstract 1
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 abstract 1
- SOLOHWWGJALNFO-UHFFFAOYSA-N triphenyllead Chemical compound C1=CC=CC=C1[Pb](C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1[Pb](C=1C=CC=CC=1)C1=CC=CC=C1 SOLOHWWGJALNFO-UHFFFAOYSA-N 0.000 abstract 1
- 229920002554 vinyl polymer Polymers 0.000 abstract 1
- 239000008096 xylene Substances 0.000 abstract 1
- 150000003738 xylenes Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
1291441 Electron beam irradiation apparatus WESTERN ELECTRIC CO Inc 3 Oct 1969 [3 Oct 1968] 48625/69 Heading H1D In a photo-resist process for coating a pattern on a substrate using an electron beam as the hardening radiation, the sensitivity of the photoresist material to electron bombardment is improved by adding to it an organometallic compound or a compound which readily dissociates into free radicals, the metal being from Groups III to V of atomic number greater than 30, the compound amounting to up to 5% and preferably 0À1 to 2% by weight of the photoresist solution; suitable materials on dibutyltin maleate, hexaphenyldilead, tetracyclohexyltin, triphenylbismuth, triphenylstilbene, triphenylarsine, cyclopentadienylthallium, and divinyldibutyltin. The latter may comprise benzil, benzophenone, or 1,4-diphenyl-1,3-butadiene forming preferably about 1% and not more than 5% of the solution. The photoresist material may be a polyvinyl cinnamate in a solvent comprising a mixture of chlorobenzene and cyclohexone, or alternatively a polymerized isoprene dimer in a solvent comprising a mixture of ethylbenzene, mixed xylenes and methylcellosolve.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76486668A | 1968-10-03 | 1968-10-03 | |
| US76486768A | 1968-10-03 | 1968-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1291441A true GB1291441A (en) | 1972-10-04 |
Family
ID=27117530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4862569A Expired GB1291441A (en) | 1968-10-03 | 1969-10-03 | Methods of coating substrates with photoresists |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE739834A (en) |
| DE (1) | DE1949502C3 (en) |
| GB (1) | GB1291441A (en) |
| NL (1) | NL6915006A (en) |
| SE (1) | SE361366B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2459156A1 (en) * | 1974-04-22 | 1975-11-06 | Ibm | METHOD OF MANUFACTURING A PHOTO LACQUER MASK ON A SEMICONDUCTOR SUBSTRATE |
| EP3177966B1 (en) * | 2014-08-06 | 2019-03-13 | The University of Manchester | Electron beam resist composition |
| US11143961B1 (en) * | 2015-09-30 | 2021-10-12 | The University Of Manchester | Resist composition |
| CN113568271A (en) * | 2020-07-02 | 2021-10-29 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor device and patterning method |
-
1969
- 1969-09-29 SE SE1335669A patent/SE361366B/xx unknown
- 1969-10-01 DE DE19691949502 patent/DE1949502C3/en not_active Expired
- 1969-10-03 BE BE739834D patent/BE739834A/en unknown
- 1969-10-03 NL NL6915006A patent/NL6915006A/xx unknown
- 1969-10-03 GB GB4862569A patent/GB1291441A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2459156A1 (en) * | 1974-04-22 | 1975-11-06 | Ibm | METHOD OF MANUFACTURING A PHOTO LACQUER MASK ON A SEMICONDUCTOR SUBSTRATE |
| EP3177966B1 (en) * | 2014-08-06 | 2019-03-13 | The University of Manchester | Electron beam resist composition |
| US10234764B2 (en) | 2014-08-06 | 2019-03-19 | The University Of Manchester | Electron beam resist composition |
| EP3561596A1 (en) * | 2014-08-06 | 2019-10-30 | The University Of Manchester | Antiscattering resist composition and method for performing lithography |
| US10613441B2 (en) | 2014-08-06 | 2020-04-07 | The University Of Manchester | Electron beam resist composition |
| US11143961B1 (en) * | 2015-09-30 | 2021-10-12 | The University Of Manchester | Resist composition |
| CN113568271A (en) * | 2020-07-02 | 2021-10-29 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor device and patterning method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1949502A1 (en) | 1970-04-09 |
| DE1949502C3 (en) | 1975-01-16 |
| SE361366B (en) | 1973-10-29 |
| NL6915006A (en) | 1970-04-07 |
| DE1949502B2 (en) | 1974-05-30 |
| BE739834A (en) | 1970-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |