GB1290926A - - Google Patents
Info
- Publication number
- GB1290926A GB1290926A GB1290926DA GB1290926A GB 1290926 A GB1290926 A GB 1290926A GB 1290926D A GB1290926D A GB 1290926DA GB 1290926 A GB1290926 A GB 1290926A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- heat sink
- metal film
- substrate
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10W40/10—
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
1290926 Semi-conductor diodes TEXAS INSTRUMENTS Inc 28 May 1970 [20 June 1969] 25718/70 Heading H1K A flipchip Schottky avalanche diode of metalsemi-conductor having a heat sink plated on the metal film comprises (Fig. 4) a N+ low resistivity high impurity silicon substrate 10 on which a monocrystalline N-silicon layer 12 is epitaxially grown with high resistivity and low impurity. A metal film rectifying layer 14 of, e.g. Ti, Wo, Mo or. Ta is formed on polished layer 12 by evaporation in vacuo or by sputtering. A metallic bonding layer 16, e.g. Ag, Au is formed by plating or vacuum evaporation on layer 14 and a heat sink layer 18 of, e.g. Cu is deposited on layer 16 by electroplating or electroless plating, and the substrate and heat sink are lapped to thickness. A thin metallic film is evaporated on the substrate and coated with a photoresist, which is selectively removed from the metal film except for the areas of contacts 24, 26, which remain after etching. A second photoresist is applied and selectively removed to define diodes 20, 22, which remain after etching the superincumbent layers down to the heat sink (Fig. 5) which is sawn into individual chips (Fig. 6, not shown) which are conventionally mounted.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83518069A | 1969-06-20 | 1969-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1290926A true GB1290926A (en) | 1972-09-27 |
Family
ID=25268832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1290926D Expired GB1290926A (en) | 1969-06-20 | 1970-05-28 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4910194B1 (en) |
| DE (1) | DE2029236A1 (en) |
| FR (1) | FR2046969B1 (en) |
| GB (1) | GB1290926A (en) |
| NL (1) | NL7008946A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2151079A (en) * | 1981-11-23 | 1985-07-10 | Raytheon Co | Semiconductor device structures |
| US5144413A (en) * | 1981-11-23 | 1992-09-01 | Raytheon Company | Semiconductor structures and manufacturing methods |
| CN112635575A (en) * | 2021-01-13 | 2021-04-09 | 华东光电集成器件研究所 | High-frequency IMPATT diode mesa tube core structure and preparation method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5531632B2 (en) * | 1972-11-17 | 1980-08-19 | ||
| JPS5532034B2 (en) * | 1972-11-20 | 1980-08-22 | ||
| CA1015069A (en) * | 1974-04-01 | 1977-08-02 | Chung K. Kim | Dynamic negative resistance diode |
| DE2444490C2 (en) * | 1974-09-18 | 1982-08-26 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method for manufacturing a microwave diode |
| US4215156A (en) * | 1977-08-26 | 1980-07-29 | International Business Machines Corporation | Method for fabricating tantalum semiconductor contacts |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3288662A (en) * | 1963-07-18 | 1966-11-29 | Rca Corp | Method of etching to dice a semiconductor slice |
-
1970
- 1970-05-28 GB GB1290926D patent/GB1290926A/en not_active Expired
- 1970-06-13 DE DE19702029236 patent/DE2029236A1/en active Pending
- 1970-06-18 NL NL7008946A patent/NL7008946A/xx unknown
- 1970-06-19 FR FR707022778A patent/FR2046969B1/fr not_active Expired
- 1970-06-19 JP JP45052870A patent/JPS4910194B1/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2151079A (en) * | 1981-11-23 | 1985-07-10 | Raytheon Co | Semiconductor device structures |
| US5144413A (en) * | 1981-11-23 | 1992-09-01 | Raytheon Company | Semiconductor structures and manufacturing methods |
| CN112635575A (en) * | 2021-01-13 | 2021-04-09 | 华东光电集成器件研究所 | High-frequency IMPATT diode mesa tube core structure and preparation method |
| CN112635575B (en) * | 2021-01-13 | 2023-08-22 | 华东光电集成器件研究所 | A kind of high-frequency IMPATT diode mesa tube core structure and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4910194B1 (en) | 1974-03-08 |
| DE2029236A1 (en) | 1971-01-07 |
| FR2046969B1 (en) | 1973-08-10 |
| NL7008946A (en) | 1970-12-22 |
| FR2046969A1 (en) | 1971-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |