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GB1282167A - Process for vapour growing thin films - Google Patents

Process for vapour growing thin films

Info

Publication number
GB1282167A
GB1282167A GB43364/69A GB4336469A GB1282167A GB 1282167 A GB1282167 A GB 1282167A GB 43364/69 A GB43364/69 A GB 43364/69A GB 4336469 A GB4336469 A GB 4336469A GB 1282167 A GB1282167 A GB 1282167A
Authority
GB
United Kingdom
Prior art keywords
vapour
thin films
growing thin
sept
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43364/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1282167A publication Critical patent/GB1282167A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1282167 Semi-conductors INTERNATIONAL BUSINESS MACHINES CORP 2 Sept 1969 [27 Sept 1968] 43364/69 Heading H1K [Also in Division C7] A semi-conductor ternary film of elements of Groups II and VI is deposited on a crystal 16 by feeding vapours from sources 42, 43, 44 at a temperature which prevents binary growth. The substrate temperature is controlled by a heat sink 32. The substrate may be cleaned by backetching, and may be Hg-Te, Pb-Te, Sn-Te or Cd-Te. The film deposited may be Hg-Cd-Te, Zn-Cd-Te, Zn-Hg-Te, Hg-Cd-Se, Zn-Hg-Se, and Zn-Cd-Se.
GB43364/69A 1968-09-27 1969-09-02 Process for vapour growing thin films Expired GB1282167A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76330768A 1968-09-27 1968-09-27

Publications (1)

Publication Number Publication Date
GB1282167A true GB1282167A (en) 1972-07-19

Family

ID=25067452

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43364/69A Expired GB1282167A (en) 1968-09-27 1969-09-02 Process for vapour growing thin films

Country Status (6)

Country Link
US (1) US3619283A (en)
JP (1) JPS4949309B1 (en)
CA (1) CA931049A (en)
DE (1) DE1947382C3 (en)
FR (1) FR2018987A1 (en)
GB (1) GB1282167A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107675251A (en) * 2017-09-28 2018-02-09 哈尔滨工业大学 A kind of gas-phase synthesizing method of high-purity cadmium selenide polycrystalline material

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725135A (en) * 1968-10-09 1973-04-03 Honeywell Inc PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3779803A (en) * 1969-11-17 1973-12-18 Ibm Infrared sensitive semiconductor device and method of manufacture
US3884788A (en) * 1973-08-30 1975-05-20 Honeywell Inc Substrate preparation for liquid phase epitaxy of mercury cadmium telluride
US3929556A (en) * 1974-02-19 1975-12-30 Cincinnati Electronics Corp Nucleating growth of lead-tin-telluride single crystal with an oriented barium fluoride substrate
JPS5182824A (en) * 1975-01-17 1976-07-20 Tk Carburettor JIDONENRYOKOTSUKU
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4118857A (en) * 1977-01-12 1978-10-10 The United States Of America As Represented By The Secretary Of The Army Flipped method for characterization of epitaxial layers
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
US4439267A (en) * 1982-09-29 1984-03-27 The United States Of America As Represented By The Secretary Of The Army Vapor-phase method for growing mercury cadmium telluride
US4487813A (en) * 1982-12-06 1984-12-11 Ford Aerospace & Communications Corporation Composition control of CSVPE HgCdTe
US4447470A (en) * 1982-12-06 1984-05-08 Ford Aerospace & Communications Corporation Composition control of CSVPE HgCdTe
JPS59140365A (en) * 1983-02-01 1984-08-11 Ushio Inc Photochemical vapor deposition device
US4732110A (en) * 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
US5259900A (en) * 1985-11-26 1993-11-09 Texas Instruments Incorporated Reflux annealing device and method
US4950358A (en) * 1986-07-07 1990-08-21 Santa Barbara Research Center Vapor phase epitaxy of semiconductor material in a quasi-open system
JPS63213116A (en) * 1987-02-28 1988-09-06 Hoya Corp Production of magnetic recording medium
JP2754765B2 (en) * 1989-07-19 1998-05-20 富士通株式会社 Method for manufacturing compound semiconductor crystal
GB9717726D0 (en) * 1997-08-22 1997-10-29 Univ Durham Improvements in and relating to crystal growth
GB2452011B (en) * 2007-05-18 2012-02-08 Kromek Ltd Apparatus for crystal growth
US20090020070A1 (en) * 2007-07-19 2009-01-22 Michael Schafer Vacuum evaporation apparatus for solid materials
US8371705B2 (en) * 2008-03-11 2013-02-12 The United States Of America As Represented By The Secretary Of The Army Mirrors and methods of making same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
NL103088C (en) * 1957-06-08
US3394390A (en) * 1965-03-31 1968-07-23 Texas Instruments Inc Method for making compond semiconductor materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107675251A (en) * 2017-09-28 2018-02-09 哈尔滨工业大学 A kind of gas-phase synthesizing method of high-purity cadmium selenide polycrystalline material
CN107675251B (en) * 2017-09-28 2019-07-16 哈尔滨工业大学 A kind of gas-phase synthesizing method of high-purity cadmium selenide polycrystalline material

Also Published As

Publication number Publication date
CA931049A (en) 1973-07-31
JPS4949309B1 (en) 1974-12-26
US3619283A (en) 1971-11-09
DE1947382C3 (en) 1973-12-06
DE1947382B2 (en) 1973-04-19
DE1947382A1 (en) 1970-04-16
FR2018987A1 (en) 1970-06-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee