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GB1281058A - High speed semiconductor switching device - Google Patents

High speed semiconductor switching device

Info

Publication number
GB1281058A
GB1281058A GB52981/69A GB5298169A GB1281058A GB 1281058 A GB1281058 A GB 1281058A GB 52981/69 A GB52981/69 A GB 52981/69A GB 5298169 A GB5298169 A GB 5298169A GB 1281058 A GB1281058 A GB 1281058A
Authority
GB
United Kingdom
Prior art keywords
high speed
switching device
semiconductor switching
speed semiconductor
division
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52981/69A
Inventor
John William Kronlage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1281058A publication Critical patent/GB1281058A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084—Diode-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W20/40—
    • H10W72/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1281058 Transistor logic circuits TEXAS INSTRUMENTS Inc 29 Oct 1969 [31 Dec 1968] 52981/69 Heading H3T [Also in Division H1] A three-input NAND gate includes as an inverting amplifier a transistor effectively provided with a Schottky diode 70 connected in parallel with its collector-base junction (see Division H1, for constructional details).
GB52981/69A 1968-12-31 1969-10-29 High speed semiconductor switching device Expired GB1281058A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78817068A 1968-12-31 1968-12-31

Publications (1)

Publication Number Publication Date
GB1281058A true GB1281058A (en) 1972-07-12

Family

ID=25143660

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52981/69A Expired GB1281058A (en) 1968-12-31 1969-10-29 High speed semiconductor switching device

Country Status (4)

Country Link
DE (1) DE1965051C2 (en)
FR (1) FR2027414B1 (en)
GB (1) GB1281058A (en)
NL (1) NL166582C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179494A (en) * 1985-08-09 1987-03-04 Plessey Co Plc Protection structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
FR1529199A (en) * 1966-06-28 1968-06-14 Telefunken Patent Semiconductor components with an emitter region, a base region and a collector region

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179494A (en) * 1985-08-09 1987-03-04 Plessey Co Plc Protection structure
GB2179494B (en) * 1985-08-09 1989-07-26 Plessey Co Plc Protection structures for integrated circuits

Also Published As

Publication number Publication date
NL166582B (en) 1981-03-16
NL166582C (en) 1981-08-17
NL6919569A (en) 1970-07-02
DE1965051C2 (en) 1983-07-28
FR2027414A1 (en) 1970-09-25
FR2027414B1 (en) 1973-11-16
DE1965051A1 (en) 1970-07-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years