GB1279449A - Apparatus for ion implantation - Google Patents
Apparatus for ion implantationInfo
- Publication number
- GB1279449A GB1279449A GB48059/69A GB4805969A GB1279449A GB 1279449 A GB1279449 A GB 1279449A GB 48059/69 A GB48059/69 A GB 48059/69A GB 4805969 A GB4805969 A GB 4805969A GB 1279449 A GB1279449 A GB 1279449A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ion beam
- ion
- target
- passes
- mass separator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 title abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 8
- 150000002500 ions Chemical class 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- -1 boron or phosphorus Chemical class 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
- G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
1279449 Ion beam apparatus HUGHES AIRCRAFT CO 30 Sept 1969 [4 Oct 1968] 48059/69 Heading H1D In an ion implantation apparatus those ions which are divergent from the ion beam axis are removed from the ion beam 18 after passing through a mass separator 20 by passing it through a small aperture 30 in a filter 28, between which and the mass separator 20 is disposed a decelerating electrode 26 to minimize sputtering of the apertured plate 28, so that the reduced ion beam may subsequently be focused to a spot on a target 20. The ion beam 18 from ion source 12, which may be a duoplasmatron, surface ionization or electron bombardment source, passes through extractor and focusing electrodes 14, 16 into mass separator 22 and the selected, emergent and slightly divergent ion beam 24 passes decelerating electrodes 26 before encountering the filter 28. In some arrangements, Fig. 2 (not shown), the ion beam may be passed through two separate apertured filters, which may be made, for example, of tungsten or molybdenum. The narrow ion beam 32 is accelerated by electrode 34 and passes through the orthogonal deflecting plates 36, 36 which permit scan or spot implantation of ions, such as boron or phosphorus, in the target 20 which may be a silicon wafer or wafers arranged as an array or integrated circuit. To deliver a useful current of 10<SP>-9</SP> amp. at the target for a spot size of 1 micron the source current density should exceed 2 m.amp./cm.<SP>2</SP> of the desired dopant ion.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76512068A | 1968-10-04 | 1968-10-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1279449A true GB1279449A (en) | 1972-06-28 |
Family
ID=25072699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB48059/69A Expired GB1279449A (en) | 1968-10-04 | 1969-09-30 | Apparatus for ion implantation |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3585397A (en) |
| GB (1) | GB1279449A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2211984A (en) * | 1987-10-30 | 1989-07-12 | Nat Res Dev | Particle beam source |
| GB2307096A (en) * | 1995-11-08 | 1997-05-14 | Applied Materials Inc | An ion implanter with post mass selection deceleration |
| US5932882A (en) * | 1995-11-08 | 1999-08-03 | Applied Materials, Inc. | Ion implanter with post mass selection deceleration |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3723733A (en) * | 1971-05-12 | 1973-03-27 | Hughes Aircraft Co | Stigmatic, crossed-field velocity filter |
| US3955091A (en) * | 1974-11-11 | 1976-05-04 | Accelerators, Inc. | Method and apparatus for extracting well-formed, high current ion beams from a plasma source |
| JPS521399A (en) * | 1975-06-24 | 1977-01-07 | Toshiba Corp | The fixation treatment method of a radioactive gas and its device |
| US3999097A (en) * | 1975-06-30 | 1976-12-21 | International Business Machines Corporation | Ion implantation apparatus utilizing multiple aperture source plate and single aperture accel-decel system |
| NL182924C (en) * | 1978-05-12 | 1988-06-01 | Philips Nv | DEVICE FOR IMPLANTING IONS IN A TIPPLATE. |
| JPS56156662A (en) * | 1980-05-02 | 1981-12-03 | Hitachi Ltd | Device for ion implantation |
| US4563587A (en) * | 1981-05-26 | 1986-01-07 | Hughes Aircraft Company | Focused ion beam microfabrication column |
| EP0079931B1 (en) * | 1981-05-26 | 1987-03-11 | Hughes Aircraft Company | Focused ion beam microfabrication column |
| US4661712A (en) * | 1985-05-28 | 1987-04-28 | Varian Associates, Inc. | Apparatus for scanning a high current ion beam with a constant angle of incidence |
| JPS6386340A (en) * | 1986-09-30 | 1988-04-16 | Fujitsu Ltd | Primary particle beam radiation device |
| US5063294A (en) * | 1989-05-17 | 1991-11-05 | Kabushiki Kaisha Kobe Seiko Sho | Converged ion beam apparatus |
| KR100249307B1 (en) * | 1997-05-13 | 2000-03-15 | 윤종용 | Analyzer of Ion implanting apparatus |
| JP3727047B2 (en) * | 1999-07-30 | 2005-12-14 | 住友イートンノバ株式会社 | Ion implanter |
| US9685298B1 (en) * | 2016-02-01 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for contamination control in ion beam apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2570124A (en) * | 1949-10-20 | 1951-10-02 | Rca Corp | Positive ion beam gun |
| US2688088A (en) * | 1951-10-19 | 1954-08-31 | Cons Eng Corp | Mass spectrometer |
| US2953680A (en) * | 1957-05-06 | 1960-09-20 | Cons Electrodynamics Corp | Mass spectrometer |
| US2947868A (en) * | 1959-07-27 | 1960-08-02 | Geophysics Corp Of America | Mass spectrometer |
| US3230362A (en) * | 1963-12-03 | 1966-01-18 | Gen Electric | Bakeable mass spectrometer with means to precisely align the ion source, analyzer and detector subassemblies |
| US3313969A (en) * | 1966-03-25 | 1967-04-11 | Boeing Co | Charged particle deflecting apparatus having hemispherical electrodes |
-
1968
- 1968-10-04 US US765120A patent/US3585397A/en not_active Expired - Lifetime
-
1969
- 1969-09-30 GB GB48059/69A patent/GB1279449A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2211984A (en) * | 1987-10-30 | 1989-07-12 | Nat Res Dev | Particle beam source |
| GB2211984B (en) * | 1987-10-30 | 1992-06-03 | Nat Res Dev | Method and apparatus for generating particle beams |
| GB2307096A (en) * | 1995-11-08 | 1997-05-14 | Applied Materials Inc | An ion implanter with post mass selection deceleration |
| US5932882A (en) * | 1995-11-08 | 1999-08-03 | Applied Materials, Inc. | Ion implanter with post mass selection deceleration |
| GB2307096B (en) * | 1995-11-08 | 2000-08-09 | Applied Materials Inc | An ion implanter with post mass selection deceleration |
Also Published As
| Publication number | Publication date |
|---|---|
| US3585397A (en) | 1971-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |