GB1272580A - Targets for radio frequency sputtering apparatus - Google Patents
Targets for radio frequency sputtering apparatusInfo
- Publication number
- GB1272580A GB1272580A GB27932/68A GB2793268A GB1272580A GB 1272580 A GB1272580 A GB 1272580A GB 27932/68 A GB27932/68 A GB 27932/68A GB 2793268 A GB2793268 A GB 2793268A GB 1272580 A GB1272580 A GB 1272580A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- targets
- june
- radio frequency
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 title 1
- 238000005477 sputtering target Methods 0.000 abstract 2
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
1,272,580. R. F. sputtering targets. EDWARDS HIGH VACUUM INTERNATIONAL Ltd. June 2, 1969 [June 12, 1968], No.27932/68. Heading C7F. A R. F. sputtering target comprises a layer of dielectric material 5, a layer 6 of target material to be sputtered, and, interposed therebetween, a layer 8 of metal alloy whose thermal properties are such that it takes up any differential expansion between layers 5 and 6. As shown, a water-cooled Cu electrode 1 has clamped to it a layer 5 of SiO 2 having a layer 7 of vacuumdeposited Cu thereon to ensure good heat exchange with electrode 1; layer 5 has thereon a vacuumbrazed layer of Ni-Fe alloy 8 itself brazed to the target layer 6, which may be metal, semiconductor, or insulator. Layer 5 may also be of alumina, and layer 6 may be sprayed-on Al or vacuum-deposited Ag or Au.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB27932/68A GB1272580A (en) | 1968-06-12 | 1968-06-12 | Targets for radio frequency sputtering apparatus |
| US830813A US3620957A (en) | 1968-06-12 | 1969-06-05 | Targets for radio frequency sputtering apparatus |
| DE19691929180 DE1929180C (en) | 1968-06-12 | 1969-06-09 | Trapping electrode for use in a high frequency sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB27932/68A GB1272580A (en) | 1968-06-12 | 1968-06-12 | Targets for radio frequency sputtering apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1272580A true GB1272580A (en) | 1972-05-03 |
Family
ID=10267607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27932/68A Expired GB1272580A (en) | 1968-06-12 | 1968-06-12 | Targets for radio frequency sputtering apparatus |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3620957A (en) |
| GB (1) | GB1272580A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3945903A (en) * | 1974-08-28 | 1976-03-23 | Shatterproof Glass Corporation | Sputter-coating of glass sheets or other substrates |
| GB1499857A (en) * | 1975-09-18 | 1978-02-01 | Standard Telephones Cables Ltd | Glow discharge etching |
| US4597847A (en) * | 1984-10-09 | 1986-07-01 | Iodep, Inc. | Non-magnetic sputtering target |
| US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
| US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
| JPH0313570A (en) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | Device for producing semiconductor and target for the device |
| JPH0586465A (en) * | 1991-06-28 | 1993-04-06 | Mitsubishi Materials Corp | Target for sputtering and its manufacture |
| US6183686B1 (en) | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
| WO2002009241A2 (en) * | 2000-07-20 | 2002-01-31 | Tokyo Electron Limited | Electrode for plasma processing system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3423303A (en) * | 1966-07-21 | 1969-01-21 | Ibm | Method of making a workpiece at a uniform potential during cathode sputtering |
| US3481854A (en) * | 1967-01-20 | 1969-12-02 | Us Air Force | Preparation of thin cermet films by radio frequency sputtering |
-
1968
- 1968-06-12 GB GB27932/68A patent/GB1272580A/en not_active Expired
-
1969
- 1969-06-05 US US830813A patent/US3620957A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1929180A1 (en) | 1970-03-05 |
| DE1929180B2 (en) | 1972-11-09 |
| US3620957A (en) | 1971-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |