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GB1269540A - Method and apparatus for forming silicon carbide filaments - Google Patents

Method and apparatus for forming silicon carbide filaments

Info

Publication number
GB1269540A
GB1269540A GB43709/69A GB4370969A GB1269540A GB 1269540 A GB1269540 A GB 1269540A GB 43709/69 A GB43709/69 A GB 43709/69A GB 4370969 A GB4370969 A GB 4370969A GB 1269540 A GB1269540 A GB 1269540A
Authority
GB
United Kingdom
Prior art keywords
wire
reaction zone
temperature
chamber
filaments
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43709/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR6908907A external-priority patent/FR2036618A6/en
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Publication of GB1269540A publication Critical patent/GB1269540A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/90—Other properties not specified above

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

1,269,540. Silicon carbide filaments. COMPAGNIE FRANCAISE THOMSON HOUSTON-HOTCHKISS BRANDT. 3 Sept., 1969 [4 Sept., 1968; 26 March, 1969], No. 43709/69. Heading C1A. In making SiC filaments by pyrolysing a gaseous organosilane in contact with a heated tungsten wire moving through a reaction zone, the variation of the temperature of the wire is maintained at less than 30‹ C. and the reaction zone temperature is maintained substansially constant, between predetermined limits, for instance between 1200‹ and 1300‹ C. The wire is normally at 1000-1400‹ C. The temperature of the reaction zone and that of the wire may be stabilized by control of a heating current for the wire, by means comprising temperature sensers located selectively within the reaction zone, after a thermal equilibrium has been established within the reaction zone. After the SiC deposition step the wire may be subjected to an electrolytic treatment. Apparatus suitable for carrying out the process is shown in the Figure, in which a tungsten wire is passed through chamber 1 (for cleaning the wire in a hydrogen atmosphere) to deposition chamber 2, to which a gaseous mixture (e.g. with H 2 ) of an organosilane is fed from vessel 5, and around which is sited a thermal screen 8 and an oven 15 having a thermal gradient to compensate for heat losses and to ensure a substantially constant wire temperature. Subsequently the wire may be treated in electrolysis chamber 9. The wire is drawn through capillary tubes at the top of each mercury trap J 1 , J 2 or J 3 . Specified organosilanes are MeSiCl 3 , Me 2 SiCl 2 and Me 3 SiCl.
GB43709/69A 1968-09-04 1969-09-03 Method and apparatus for forming silicon carbide filaments Expired GB1269540A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR165067 1968-09-04
FR6908907A FR2036618A6 (en) 1969-03-26 1969-03-26 Silicon carbide whiskers prodn

Publications (1)

Publication Number Publication Date
GB1269540A true GB1269540A (en) 1972-04-06

Family

ID=26182207

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43709/69A Expired GB1269540A (en) 1968-09-04 1969-09-03 Method and apparatus for forming silicon carbide filaments

Country Status (5)

Country Link
US (1) US3658680A (en)
BE (1) BE737899A (en)
DE (1) DE1944504A1 (en)
GB (1) GB1269540A (en)
NL (1) NL6913481A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901182A (en) * 1972-05-18 1975-08-26 Harris Corp Silicon source feed process
US3908585A (en) * 1974-04-25 1975-09-30 Goodyear Tire & Rubber Apparatus using super-heated vapor for drying solvent-treated tire cord fabric
US3964434A (en) * 1974-11-04 1976-06-22 Technicon Instruments Corporation Coating apparatus including liquid sealant between compartments
US4109157A (en) * 1975-12-18 1978-08-22 Kawasaki Jukogyo Kabushiki Kaisha Apparatus for ion-nitriding
DE2934236C2 (en) * 1979-08-24 1983-02-24 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Surge arrester with spark gap
DE3023827C2 (en) * 1980-06-25 1985-11-21 Siemens AG, 1000 Berlin und 8000 München Plant for the galvanic deposition of aluminum
US4628002A (en) * 1985-05-28 1986-12-09 Avco Corporation Silicon carbide monofilament for transverse composite properties
JP2004228335A (en) * 2003-01-23 2004-08-12 Sony Corp Steam oxidation equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1077696A (en) * 1912-03-29 1913-11-04 Gen Electric Working tungsten.
US1731269A (en) * 1925-01-23 1929-10-15 Westinghouse Lamp Co Pliable tungsten and method of producing the same
FR742269A (en) * 1932-08-16 1933-03-03
US3409469A (en) * 1964-03-05 1968-11-05 United Aircraft Corp Vapor coating conductive filaments utilizing uniform temperature
US3424603A (en) * 1965-10-06 1969-01-28 Us Air Force Method for the manufacture of pyrolytically coated filaments

Also Published As

Publication number Publication date
US3658680A (en) 1972-04-25
DE1944504A1 (en) 1970-03-26
BE737899A (en) 1970-02-25
NL6913481A (en) 1970-03-06

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