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GB1258572A - - Google Patents

Info

Publication number
GB1258572A
GB1258572A GB1127468A GB1258572DA GB1258572A GB 1258572 A GB1258572 A GB 1258572A GB 1127468 A GB1127468 A GB 1127468A GB 1258572D A GB1258572D A GB 1258572DA GB 1258572 A GB1258572 A GB 1258572A
Authority
GB
United Kingdom
Prior art keywords
photo
diode
conductor
diodes
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1127468A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1258572A publication Critical patent/GB1258572A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,258,572. Television. PLESSEY CO. Ltd. 3 March, 1969 [7 March, 1968], No. 11274/68. Heading H4F. [Also in Divisions G1 and H1] A sampling arrangement for providing access to individual photo-diodes (such as D, Fig. 1) of an array of photo-diodes, each of which is initially charged and is discharged to an extent dependent upon the amount of light impinging it, comprises conductor means (such as line conductor 1 and column conductor 2) associated with each photo diode and capacitively (C L and C C ) coupled thereto so that a potential change in the conductor means produces an output signal which is dependent upon the charge state of the photo-diode. Each photo-diode is normally reverse biased, and when the potentials on conductors 1 and 2 are simultaneously reduced to zero for a particular photo-diode, the reverse bias potential thereof is reduced to zero when the photo-diode is unexposed, but when exposed to light the photo-diode is effectively forward biased and the excess charge is conducted into the substrate of the photo-diode in the form of a current pulse I. The current pulse I which is dependent upon the amount of light falling on the photo-diode, is amplified A and forms part of the output video signal V 0 . The same sampling technique may be used for a one dimensional array of photo-diodes having only a single column conductor. The sampling arrangement constructed in integrated form is shown in Figs. 3 and 4, and comprises a transparent semi-conductor substrate 3 having a diode junction 4 formed between it and a diffused region 5. Contact is made to each diffused region 5 through holes in an insulating layer 6 by means of a squareshaped metal contact layer 7. A second insulating layer 8 is deposited over the layer 7 and two further areas 9 and 10 of metal are deposited thereover to overlie the metal contact 7 to form the coupling capacitors C C and C L respectively. At the same time column conductors 11 are deposited as extensions of the areas 9 such that the capacitance C C is formed between the column conductor 11 and the diode contact 7. A third insulating layer 12 is deposited over the metallic areas 9, 10 and 11 with a hole 13 therein located over the area 10, and a further metallic layer 14 is deposited to form the line conductor. Insulating layers 6, 8 and 12 may comprise silica or silicon nitride, metallic areas 7, 9, 10, 11 and 14 may comprise aluminium and the photo-diodes may be formed from silicon, germanium, indium arsenide or indium antimonide.
GB1127468A 1968-03-07 1968-03-07 Expired GB1258572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1127468 1968-03-07

Publications (1)

Publication Number Publication Date
GB1258572A true GB1258572A (en) 1971-12-30

Family

ID=9983202

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1127468A Expired GB1258572A (en) 1968-03-07 1968-03-07

Country Status (1)

Country Link
GB (1) GB1258572A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021910A1 (en) * 1979-06-27 1981-01-07 Thomson-Csf Array of radiation detectors read by a semiconductor device, and imaging device using such an array
FR2575602A1 (en) * 1984-12-27 1986-07-04 Thomson Csf LARGE FORMAT PHOTOSENSITIVE DEVICE AND METHOD OF USE
US4797560A (en) * 1986-01-20 1989-01-10 Thomson-Csf Matrix of photosensitive elements and an associated reading method in image formation
US4797546A (en) * 1986-01-17 1989-01-10 Thomson-Csf Method for reading a light-sensitive element constituted by a photodiode and a capacitor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021910A1 (en) * 1979-06-27 1981-01-07 Thomson-Csf Array of radiation detectors read by a semiconductor device, and imaging device using such an array
FR2460079A1 (en) * 1979-06-27 1981-01-16 Thomson Csf MOSAIC OF RADIATION DETECTORS READED BY A SEMICONDUCTOR DEVICE, AND VIEWING SYSTEM COMPRISING SUCH A MOSAIC
US4311906A (en) 1979-06-27 1982-01-19 Thomson-Csf Mosaic of radiation detectors read by a semiconductor device and a picture pickup system comprising a mosaic of this type
FR2575602A1 (en) * 1984-12-27 1986-07-04 Thomson Csf LARGE FORMAT PHOTOSENSITIVE DEVICE AND METHOD OF USE
EP0189710A1 (en) * 1984-12-27 1986-08-06 Thomson-Csf Large photosensitive device and method of employing it
US4799094A (en) * 1984-12-27 1989-01-17 Thomson-Csf Large-format photosensitive device and a method of utilization
US4797546A (en) * 1986-01-17 1989-01-10 Thomson-Csf Method for reading a light-sensitive element constituted by a photodiode and a capacitor
US4797560A (en) * 1986-01-20 1989-01-10 Thomson-Csf Matrix of photosensitive elements and an associated reading method in image formation

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee