GB1134352A - Improvements in or relating to the production of layers of a solid nitride of a semiconductor element on semiconductor crystals - Google Patents
Improvements in or relating to the production of layers of a solid nitride of a semiconductor element on semiconductor crystalsInfo
- Publication number
- GB1134352A GB1134352A GB19916/67A GB1991667A GB1134352A GB 1134352 A GB1134352 A GB 1134352A GB 19916/67 A GB19916/67 A GB 19916/67A GB 1991667 A GB1991667 A GB 1991667A GB 1134352 A GB1134352 A GB 1134352A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compound
- semi
- gas
- layers
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/6334—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H10P14/6682—
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- H10P14/69433—
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- H10P50/283—
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- H10W74/43—
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,134,352. Nitride layers. SIEMENS A.G. 1 May, 1967 [2 May, 1966], No. 19916/67. Heading C1A. A nitride of a semi-conductor element (Si, Ge, or B) is deposited as a layer on the heated surface of a semi-conductor crystal by deposition from a reaction gas comprising a halogencontaining compound of the semi-conductor element and a nitrogen compound, the components of the gas being mixed immediately adjacent the heated surface. The halogencontaining compound may be RSiX 3 , RR<SP>1</SP>X 2 , R 2 R<SP>1</SP>X, (R 2 N) 2 SiX 2 , (R 2 N) 2 SiX-NRXSi(NR 2 ) 2 , or X 3 Si-NR-SiX 3 , where R and R<SP>1</SP> are H, alkyl or aryl, and X is Cl, Br, F, or I; preferred compounds are SiCl 4 and SiHCl 3 . The nitrogen compound may be NH 3 , N 2 H 4 , or an alkyl or aryl amine. The reaction gas may also contain a rare gas, H 2 , or N 2 . The semiconductor crystal may be Si, Ge, or a III-V compound, and may have a coating of a metal, SiO 2 , or glass. It may be heated to 400- 800 C. by resistance, induction, or gas discharge heating. Ge and B are referred to only.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0103578 | 1966-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1134352A true GB1134352A (en) | 1968-11-20 |
Family
ID=7525306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB19916/67A Expired GB1134352A (en) | 1966-05-02 | 1967-05-01 | Improvements in or relating to the production of layers of a solid nitride of a semiconductor element on semiconductor crystals |
Country Status (4)
| Country | Link |
|---|---|
| AT (1) | AT266922B (en) |
| CH (1) | CH488290A (en) |
| GB (1) | GB1134352A (en) |
| NL (1) | NL6703526A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4066037A (en) * | 1975-12-17 | 1978-01-03 | Lfe Corportion | Apparatus for depositing dielectric films using a glow discharge |
| US4250205A (en) | 1977-09-16 | 1981-02-10 | Agence Nationale De Valorisation De La Recherche (Anvar) | Process for depositing a III-V semi-conductor layer on a substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2557079C2 (en) * | 1975-12-18 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Method for producing a masking layer |
-
1967
- 1967-03-06 NL NL6703526A patent/NL6703526A/xx unknown
- 1967-04-28 AT AT404767A patent/AT266922B/en active
- 1967-04-28 CH CH615267A patent/CH488290A/en not_active IP Right Cessation
- 1967-05-01 GB GB19916/67A patent/GB1134352A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4066037A (en) * | 1975-12-17 | 1978-01-03 | Lfe Corportion | Apparatus for depositing dielectric films using a glow discharge |
| US4250205A (en) | 1977-09-16 | 1981-02-10 | Agence Nationale De Valorisation De La Recherche (Anvar) | Process for depositing a III-V semi-conductor layer on a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CH488290A (en) | 1970-03-31 |
| AT266922B (en) | 1968-12-10 |
| NL6703526A (en) | 1967-11-03 |
| DE1544288A1 (en) | 1970-03-05 |
| DE1544288B2 (en) | 1975-06-12 |
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