GB1131740A - Semi-conductor devices - Google Patents
Semi-conductor devicesInfo
- Publication number
- GB1131740A GB1131740A GB39042/67A GB3904267A GB1131740A GB 1131740 A GB1131740 A GB 1131740A GB 39042/67 A GB39042/67 A GB 39042/67A GB 3904267 A GB3904267 A GB 3904267A GB 1131740 A GB1131740 A GB 1131740A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- pure
- alloyed
- thick
- sprayed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H10P14/22—
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- H10P14/2905—
-
- H10P14/3241—
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- H10P14/3402—
-
- H10P14/3802—
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
1,131,740. Semi-conductor devices. INSTITUTE FYSIKI I MATEMATIKI. 24 Aug., 1967, No. 39044/67. Addition to 1,093,122. Heading H1K. The manufacture of a selenium memory cell comprises forming a layer of Se 2-3 Á thick alloyed with Ag, between a layer of pure Se and a layer which forms a rectifying contact with Se. The Se/Ag alloyed layer may alternatively be replaced by a 1-2 Á thick layer of silver selenide, or both this layer and the layer of pure Se may be replaced by a single layer of silver selenide 5-10 Á thick, in which case the cell is electroformed by reverse current. The cell is preferably formed on a monocrystalline substrate of Ge or Si on to which are sprayed electrode layers firstly of Al, through a mask, and then of Bi. A pure Se layer is then sprayed on and crystallized at 200 C. to form hexagonal Se having its c-axis along the substrate surface. The alloyed Se/Ag layer is sprayed on, after which the rectifying layer, e.g. of cadmium selenide or of Cd/Sn alloy covered with Sn, is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB39042/67A GB1131740A (en) | 1967-08-24 | 1967-08-24 | Semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB39042/67A GB1131740A (en) | 1967-08-24 | 1967-08-24 | Semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1131740A true GB1131740A (en) | 1968-10-23 |
Family
ID=10407273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB39042/67A Expired GB1131740A (en) | 1967-08-24 | 1967-08-24 | Semi-conductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1131740A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003065456A3 (en) * | 2002-01-31 | 2003-12-04 | Micron Technology Inc | Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
-
1967
- 1967-08-24 GB GB39042/67A patent/GB1131740A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003065456A3 (en) * | 2002-01-31 | 2003-12-04 | Micron Technology Inc | Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
| US6812087B2 (en) | 2002-01-31 | 2004-11-02 | Micron Technology, Inc. | Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
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