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GB1118055A - Memory circuits - Google Patents

Memory circuits

Info

Publication number
GB1118055A
GB1118055A GB1809867A GB1809867A GB1118055A GB 1118055 A GB1118055 A GB 1118055A GB 1809867 A GB1809867 A GB 1809867A GB 1809867 A GB1809867 A GB 1809867A GB 1118055 A GB1118055 A GB 1118055A
Authority
GB
United Kingdom
Prior art keywords
memory circuits
bistable
heading
nov
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1809867A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Systems Corp
Original Assignee
Litton Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US436002A external-priority patent/US3375502A/en
Application filed by Litton Industries Inc filed Critical Litton Industries Inc
Publication of GB1118055A publication Critical patent/GB1118055A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Semiconductor Memories (AREA)
  • Burglar Alarm Systems (AREA)

Abstract

1,118,055. Bistable storage circuits. LITTON INDUSTRIES Inc. 27 Oct., 1965 [10 Nov., 1964; 1 March, 1965], No. 18098/67. Divided out of 1,118,054. Heading H3T. The description is identical with that of Specification 1,118,054, but the claims are directed to the circuit of an individual bistable element.
GB1809867A 1964-11-10 1965-10-27 Memory circuits Expired GB1118055A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41007764A 1964-11-10 1964-11-10
US436002A US3375502A (en) 1964-11-10 1965-03-01 Dynamic memory using controlled semiconductors
GB45578/65A GB1118054A (en) 1964-11-10 1965-10-27 Computer memory circuits

Publications (1)

Publication Number Publication Date
GB1118055A true GB1118055A (en) 1968-06-26

Family

ID=27259897

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1809867A Expired GB1118055A (en) 1964-11-10 1965-10-27 Memory circuits

Country Status (1)

Country Link
GB (1) GB1118055A (en)

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