GB1112094A - Transistor and method of producing it - Google Patents
Transistor and method of producing itInfo
- Publication number
- GB1112094A GB1112094A GB30335/66A GB3033566A GB1112094A GB 1112094 A GB1112094 A GB 1112094A GB 30335/66 A GB30335/66 A GB 30335/66A GB 3033566 A GB3033566 A GB 3033566A GB 1112094 A GB1112094 A GB 1112094A
- Authority
- GB
- United Kingdom
- Prior art keywords
- portions
- emitter
- region
- strips
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
Landscapes
- Bipolar Transistors (AREA)
Abstract
1,112,094. Transistors. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 6 July. 1966 [31 July, 1965], No. 30335/66. Heading H1K. The emitter region 3 of a transistor has a mesh-like configuration, and portions 5 of the base region 2 extend between the spaces in the mesh, thereby providing a high ratio of emitter circumference to emitter area. As shown, the portions 5 of the base region extend through to the upper surface of the transistor, which is coated with an oxide layer 6. Metal contact strips 9, 10, e.g. of aluminium, extend through removed portions of the oxide layer respectively to contact the emitter region 3 along strips (8), Fig. 4 (not shown), and the portions (5) of the base region on areas (7). The strips 10 are joined at one end (13) to form a comb structure, and the strips 9 are similarly joined to form a second comb structure interdigital with the first. The transistor is built up by firstly diffusing the base region 2, Fig. 3, into the collector body 1, then forming an oxide layer and shaping it into a mesh-like mask through which the emitter region 3 is produced by diffusion. The contact strips 9, 10 are applied by vapour-deposition, photographic varnishing and etching techniques. In a further embodiment portions of the collector region extend into the spaces in the emitter mesh, as well as portions of the base region.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET29116A DE1281036B (en) | 1965-07-31 | 1965-07-31 | Transistor and process for its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1112094A true GB1112094A (en) | 1968-05-01 |
Family
ID=7554656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30335/66A Expired GB1112094A (en) | 1965-07-31 | 1966-07-06 | Transistor and method of producing it |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1281036B (en) |
| FR (1) | FR1488019A (en) |
| GB (1) | GB1112094A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6813997A (en) * | 1968-09-30 | 1970-04-01 | ||
| DE10004111A1 (en) * | 2000-01-31 | 2001-08-09 | Infineon Technologies Ag | Bipolar transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1317754A (en) * | 1961-03-17 | 1963-05-08 |
-
1965
- 1965-07-31 DE DET29116A patent/DE1281036B/en not_active Withdrawn
-
1966
- 1966-07-06 GB GB30335/66A patent/GB1112094A/en not_active Expired
- 1966-07-29 FR FR71377A patent/FR1488019A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1281036B (en) | 1968-10-24 |
| FR1488019A (en) | 1967-07-07 |
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