GB1101094A - A contact arrangement for a junctionless non-rectifying solid state switching device - Google Patents
A contact arrangement for a junctionless non-rectifying solid state switching deviceInfo
- Publication number
- GB1101094A GB1101094A GB27709/65A GB2770965A GB1101094A GB 1101094 A GB1101094 A GB 1101094A GB 27709/65 A GB27709/65 A GB 27709/65A GB 2770965 A GB2770965 A GB 2770965A GB 1101094 A GB1101094 A GB 1101094A
- Authority
- GB
- United Kingdom
- Prior art keywords
- state switching
- electrode
- switching layer
- layer
- junctionless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- 239000003822 epoxy resin Substances 0.000 abstract 3
- 229920000647 polyepoxide Polymers 0.000 abstract 3
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Insulators (AREA)
Abstract
1,101,094. Solid-state switching devices. DANFOSS A.S. 30 June, 1965 [4 July, 1964], No. 27709/65. Heading HlK. In a contact arrangement including two electrodes, at least one electrode is provided with an evaporated junctionless non-rectifying solid-state switching layer, and the two electrodes are urged together to compress the layer. An electrode 3, e.g. of C or Ta, is located in bushing 1. The electrode 6, e.g. of burnt or sintered carbon, has an evaporated solid-state switching layer 7 thereon and this layer is compressed against electrode 3 by a ring of epoxy resin 8. In an alternative embodiment (Fig. 2, not shown), two electrodes are provided, each having an evaporated switching layer (11, 12) together with an additional switching layer (13) between the two layers whilst the whole easing is filled with an epoxy resin. In another embodiment (Fig. 3, not shown), two Ta wires each bent into a hook at one end and having a switching layer over the hook portion, are hooked together and held in a stressed condition by epoxy resin.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED44895A DE1263197B (en) | 1964-07-04 | 1964-07-04 | Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1101094A true GB1101094A (en) | 1968-01-31 |
Family
ID=7048628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27709/65A Expired GB1101094A (en) | 1964-07-04 | 1965-06-30 | A contact arrangement for a junctionless non-rectifying solid state switching device |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH434484A (en) |
| DE (1) | DE1263197B (en) |
| FR (1) | FR1441010A (en) |
| GB (1) | GB1101094A (en) |
| NL (1) | NL6508335A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB579218A (en) * | 1943-07-09 | 1946-07-26 | Standard Telephones Cables Ltd | Rectifiers and method of making same |
| DE860973C (en) * | 1944-08-21 | 1952-12-29 | Siemens Ag | detector |
| DE970899C (en) * | 1948-10-02 | 1958-11-13 | Siemens Ag | Two-layer dry rectifier |
| DE1079212B (en) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Semiconductor arrangement with partially negative voltage characteristics, in particular switching diode |
-
1964
- 1964-07-04 DE DED44895A patent/DE1263197B/en active Pending
-
1965
- 1965-06-12 CH CH837565A patent/CH434484A/en unknown
- 1965-06-28 FR FR22569A patent/FR1441010A/en not_active Expired
- 1965-06-29 NL NL6508335A patent/NL6508335A/xx unknown
- 1965-06-30 GB GB27709/65A patent/GB1101094A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH434484A (en) | 1967-04-30 |
| FR1441010A (en) | 1966-06-03 |
| NL6508335A (en) | 1966-01-05 |
| DE1263197B (en) | 1968-03-14 |
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