GB1197308A - Microminiature High-Frequency Cavity-Type Oscillators and Amplifiers Employing Integrated Circuits - Google Patents
Microminiature High-Frequency Cavity-Type Oscillators and Amplifiers Employing Integrated CircuitsInfo
- Publication number
- GB1197308A GB1197308A GB4815367A GB4815367A GB1197308A GB 1197308 A GB1197308 A GB 1197308A GB 4815367 A GB4815367 A GB 4815367A GB 4815367 A GB4815367 A GB 4815367A GB 1197308 A GB1197308 A GB 1197308A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cavity
- oscillator
- transistor
- conductor
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000000523 sample Substances 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1805—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a coaxial resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/62—Two-way amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
1,197,308. Electric component assemblies. SANDERS ASSOCIATES Inc. 23 Oct., 1967 [22 Nov., 1966], No. 48153/67. Heading H1R. [Also in Division H3] A micro-miniature cavity type oscillator or amplifier employs an integrated circuit assembly within the cavity. In an H.F. oscillator embodiment (Fig. 1) a cavity resonator 10 including coaxial inner and outer conductors 12, 14 respectively has an end cap 16 on which is mounted on insulating pad 20 of beryllium or aluminium oxide carrying a thick film type conductive layer 22 of gold, silver or platinum divided into four conductive sections 22a, 22b, 22c, 22d by etching away perpendicular strips. Components comprising a transistor 30 (with cases removed) on R.F. choke coil 36, resistor 38, capacitor 42 and a capacitor 48 are mounted on and are interconnected by the conductive sections as shown diagrammatically in Fig. 2. Supply terminal posts 24, 26 are also provided. The end cap 16 is press fitted into the cavity and a spring member 50 connected to inner conductor 12 contacts section 22a thereby connecting the collector junction of transistor 30 to conductor 12 while an annular flange member 18 engages the outer conductor to connect it to earth potential via post 26. A second end wall forms a short circuit betw een inner and outer conductors 12, 14. An inner conductor 58 of a coaxial output probe 54 in the second end wall forms a coupling loop 60, and the probe may be a plunger device whereby the tuning of the cavity is changed according to the length of probe protruding into it. The cavity may also be tuned by means of a screw 62, adjustment of which into and out of the cavity varies the capacitance thereof. The cavity 10 provides one reactance and the internal stray capacitances 66, 68 of the transistor provide the others to form a parallel tuned circuit. In a further embodiment Figs. 3, 4 (not shown), an amplifier is provided. The construction is similar to the oscillator arrangement, but there are two cavities having a common wall. Alternatively, thin film or hybrid circuitry may be used; also a plurality of transistors may be parallel connected in the oscillator circuit, or series connected in the amplifier embodiment.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59617266A | 1966-11-22 | 1966-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1197308A true GB1197308A (en) | 1970-07-01 |
Family
ID=24386240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4815367A Expired GB1197308A (en) | 1966-11-22 | 1967-10-23 | Microminiature High-Frequency Cavity-Type Oscillators and Amplifiers Employing Integrated Circuits |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH484556A (en) |
| DE (1) | DE1591590A1 (en) |
| GB (1) | GB1197308A (en) |
| NL (1) | NL6714221A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2931428C2 (en) * | 1979-08-02 | 1982-03-04 | Siemens AG, 1000 Berlin und 8000 München | Microwave oscillator |
-
1967
- 1967-10-19 NL NL6714221A patent/NL6714221A/xx unknown
- 1967-10-23 GB GB4815367A patent/GB1197308A/en not_active Expired
- 1967-11-11 CH CH1584767A patent/CH484556A/en not_active IP Right Cessation
- 1967-11-22 DE DE19671591590 patent/DE1591590A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH484556A (en) | 1970-01-15 |
| DE1591590A1 (en) | 1970-10-22 |
| NL6714221A (en) | 1968-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |