GB1176088A - Temperature Compensated Zener Diode. - Google Patents
Temperature Compensated Zener Diode.Info
- Publication number
- GB1176088A GB1176088A GB40946/67A GB4094667A GB1176088A GB 1176088 A GB1176088 A GB 1176088A GB 40946/67 A GB40946/67 A GB 40946/67A GB 4094667 A GB4094667 A GB 4094667A GB 1176088 A GB1176088 A GB 1176088A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- series
- junctions
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1,176,088. Semi-conductor devices. ITT INDUSTRIES Inc. 7 Sept., 1967 [13 Sept., 1966], No. 40946/67. Heading H1K. Several forward biased PN junctions 4 are provided in series with the or each reverse biased junction 5 in a Zener diode to comprensate for the positive temperature coefficient of breakdown voltage at the reverse biased junction(s) for breakdown voltages greater than about 6 volts. As shown the series of P+ and N+ zones 2, 3 defining the junctions 4, 5 may be formed at the interface of an N - substrate 1 and an N - epitaxial layer 10. The zones 2, 3 form by redistribution of pre - deposited doping material during the deposition of the layer 10. Regions 2b, 3b are diffused into the layer 10 through apertures in an oxide coating 11 to contact the end zones 2a, 3a of the series. In another embodiment a P - epitaxial layer (12), Fig. 4 (not shown), is deposited on an N - substrate (1), and a series of alternate P+ and N+ zones (2, 3) are diffused into the layer (12), the N+ zones (3) penetrating through to the N- substrate (1). Simpler embodiments are described in which the series of P+ and N+ zones defining the forward and reverse biased junctions are merely formed in the surface of an N - substrate. The junctions are protected by oxide layers, except for certain of them which may be short-circuited by metal deposits to regulate the degree of temperature compensation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED0051079 | 1966-09-13 | ||
| DE19661539867 DE1539867C3 (en) | 1966-09-13 | 1966-09-13 | Temperature-compensated Zener diode and process for its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1176088A true GB1176088A (en) | 1970-01-01 |
Family
ID=25752810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB40946/67A Expired GB1176088A (en) | 1951-01-28 | 1967-09-07 | Temperature Compensated Zener Diode. |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1549324A (en) |
| GB (1) | GB1176088A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3999205A (en) * | 1975-04-03 | 1976-12-21 | Rca Corporation | Rectifier structure for a semiconductor integrated circuit device |
| US4005471A (en) * | 1975-03-17 | 1977-01-25 | International Business Machines Corporation | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device |
| US4200877A (en) * | 1976-12-23 | 1980-04-29 | Hitachi, Ltd. | Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
| WO2002003473A1 (en) | 2000-07-05 | 2002-01-10 | Robert Bosch Gmbh | Arrangement with p-doped and n-doped semiconductor layers and method for producing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1188398B (en) * | 1986-02-18 | 1988-01-07 | Sgs Microelettronica Spa | INTEGRATED STRUCTURE FOR PROTECTION AGAINST STATIC DISCHARGES AND A SEMICONDUCTOR DEVICE INCORPORATING THE SAME |
-
1967
- 1967-09-07 GB GB40946/67A patent/GB1176088A/en not_active Expired
- 1967-09-13 FR FR1549324D patent/FR1549324A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4005471A (en) * | 1975-03-17 | 1977-01-25 | International Business Machines Corporation | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device |
| US3999205A (en) * | 1975-04-03 | 1976-12-21 | Rca Corporation | Rectifier structure for a semiconductor integrated circuit device |
| US4200877A (en) * | 1976-12-23 | 1980-04-29 | Hitachi, Ltd. | Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
| WO2002003473A1 (en) | 2000-07-05 | 2002-01-10 | Robert Bosch Gmbh | Arrangement with p-doped and n-doped semiconductor layers and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1549324A (en) | 1968-12-13 |
| DE1539867B2 (en) | 1974-05-09 |
| DE1539867A1 (en) | 1970-05-21 |
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