GB1149569A - Capacitors and methods for their manufacture - Google Patents
Capacitors and methods for their manufactureInfo
- Publication number
- GB1149569A GB1149569A GB3900766A GB3900766A GB1149569A GB 1149569 A GB1149569 A GB 1149569A GB 3900766 A GB3900766 A GB 3900766A GB 3900766 A GB3900766 A GB 3900766A GB 1149569 A GB1149569 A GB 1149569A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- dielectric
- overlayer
- projections
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000011282 treatment Methods 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000007743 anodising Methods 0.000 abstract 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
1,149,569. Capacitors. MINISTER OF TECHNOLOGY. 31 Aug., 1967 [1 Sept., 1966], No. 39007/66. Heading H1M. A capacitor comprises a pair of coplanar electrodes 1, 2 on a dielectric substrate 3, the electrodes having interdigitated projections 5, 6, 7 and 8, and a dielectric overlayer which fills the space 4 between the projections (Figs. 3, 4, not shown), the useful capacitance being derived from the proximity of the edges of the projections. The capacitance may be further increased by another parallel connected pair of electrodes on the overlayer (Fig. 5, not shown). The substrate and overlayer dielectric may be glass, ceramic, alumina, barium titanate, lead titanate zirconate or silicon monoxide and may be selected so that its change of dielectric constant with temperature compensates for its thermal expansion. To form the electrodes a single conductive layer of, e.g. tantalum may be applied and divided by a meandering slot by electron beam treatment or a masking and etching process. Alternatively the electrodes may be printed separately. The capacitance may be trimmed to a desired value by electron beam treatment, or anodizing, or etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3900766A GB1149569A (en) | 1966-09-01 | 1966-09-01 | Capacitors and methods for their manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3900766A GB1149569A (en) | 1966-09-01 | 1966-09-01 | Capacitors and methods for their manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1149569A true GB1149569A (en) | 1969-04-23 |
Family
ID=10407042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3900766A Expired GB1149569A (en) | 1966-09-01 | 1966-09-01 | Capacitors and methods for their manufacture |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1149569A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3952593A (en) * | 1974-08-01 | 1976-04-27 | Liquidometer Corporation | Liquid level gauge |
| GB2243722A (en) * | 1990-05-03 | 1991-11-06 | Oxley Dev Co Ltd | Improvements in multilayer discoidal capacitors |
| EP1895620A4 (en) * | 2005-06-16 | 2009-07-01 | Fujitsu Ltd | RFID TAG ANTENNA AND RFID TAG |
| US7906424B2 (en) | 2007-08-01 | 2011-03-15 | Advanced Micro Devices, Inc. | Conductor bump method and apparatus |
| US7944732B2 (en) | 2008-11-21 | 2011-05-17 | Xilinx, Inc. | Integrated capacitor with alternating layered segments |
| US7956438B2 (en) | 2008-11-21 | 2011-06-07 | Xilinx, Inc. | Integrated capacitor with interlinked lateral fins |
| US7994609B2 (en) | 2008-11-21 | 2011-08-09 | Xilinx, Inc. | Shielding for integrated capacitors |
| US7994610B1 (en) | 2008-11-21 | 2011-08-09 | Xilinx, Inc. | Integrated capacitor with tartan cross section |
| US8207592B2 (en) | 2008-11-21 | 2012-06-26 | Xilinx, Inc. | Integrated capacitor with array of crosses |
| US8314474B2 (en) | 2008-07-25 | 2012-11-20 | Ati Technologies Ulc | Under bump metallization for on-die capacitor |
| US8362589B2 (en) | 2008-11-21 | 2013-01-29 | Xilinx, Inc. | Integrated capacitor with cabled plates |
| US8653844B2 (en) | 2011-03-07 | 2014-02-18 | Xilinx, Inc. | Calibrating device performance within an integrated circuit |
| US8941974B2 (en) | 2011-09-09 | 2015-01-27 | Xilinx, Inc. | Interdigitated capacitor having digits of varying width |
| US20150263697A1 (en) * | 2012-08-30 | 2015-09-17 | Zte Corporation | Piezoelectric Acoustic Resonator with Adjustable Temperature Compensation Capability |
| US9270247B2 (en) | 2013-11-27 | 2016-02-23 | Xilinx, Inc. | High quality factor inductive and capacitive circuit structure |
| US9524964B2 (en) | 2014-08-14 | 2016-12-20 | Xilinx, Inc. | Capacitor structure in an integrated circuit |
| CN117545342A (en) * | 2024-01-09 | 2024-02-09 | 宜确半导体(苏州)有限公司 | A three-dimensional capacitor structure, a three-dimensional capacitor and a preparation method thereof |
-
1966
- 1966-09-01 GB GB3900766A patent/GB1149569A/en not_active Expired
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3952593A (en) * | 1974-08-01 | 1976-04-27 | Liquidometer Corporation | Liquid level gauge |
| GB2243722A (en) * | 1990-05-03 | 1991-11-06 | Oxley Dev Co Ltd | Improvements in multilayer discoidal capacitors |
| CN101203984B (en) * | 2005-06-16 | 2011-12-07 | 富士通株式会社 | RFID label aerial and RFID label |
| EP1895620A4 (en) * | 2005-06-16 | 2009-07-01 | Fujitsu Ltd | RFID TAG ANTENNA AND RFID TAG |
| US7906424B2 (en) | 2007-08-01 | 2011-03-15 | Advanced Micro Devices, Inc. | Conductor bump method and apparatus |
| US8294266B2 (en) | 2007-08-01 | 2012-10-23 | Advanced Micro Devices, Inc. | Conductor bump method and apparatus |
| US8314474B2 (en) | 2008-07-25 | 2012-11-20 | Ati Technologies Ulc | Under bump metallization for on-die capacitor |
| US7956438B2 (en) | 2008-11-21 | 2011-06-07 | Xilinx, Inc. | Integrated capacitor with interlinked lateral fins |
| US7994610B1 (en) | 2008-11-21 | 2011-08-09 | Xilinx, Inc. | Integrated capacitor with tartan cross section |
| US8207592B2 (en) | 2008-11-21 | 2012-06-26 | Xilinx, Inc. | Integrated capacitor with array of crosses |
| US7994609B2 (en) | 2008-11-21 | 2011-08-09 | Xilinx, Inc. | Shielding for integrated capacitors |
| US7944732B2 (en) | 2008-11-21 | 2011-05-17 | Xilinx, Inc. | Integrated capacitor with alternating layered segments |
| US8362589B2 (en) | 2008-11-21 | 2013-01-29 | Xilinx, Inc. | Integrated capacitor with cabled plates |
| US8653844B2 (en) | 2011-03-07 | 2014-02-18 | Xilinx, Inc. | Calibrating device performance within an integrated circuit |
| US8941974B2 (en) | 2011-09-09 | 2015-01-27 | Xilinx, Inc. | Interdigitated capacitor having digits of varying width |
| US20150263697A1 (en) * | 2012-08-30 | 2015-09-17 | Zte Corporation | Piezoelectric Acoustic Resonator with Adjustable Temperature Compensation Capability |
| US9991867B2 (en) * | 2012-08-30 | 2018-06-05 | Zte Corporation | Piezoelectric acoustic resonator with adjustable temperature compensation capability |
| US9270247B2 (en) | 2013-11-27 | 2016-02-23 | Xilinx, Inc. | High quality factor inductive and capacitive circuit structure |
| US9524964B2 (en) | 2014-08-14 | 2016-12-20 | Xilinx, Inc. | Capacitor structure in an integrated circuit |
| CN117545342A (en) * | 2024-01-09 | 2024-02-09 | 宜确半导体(苏州)有限公司 | A three-dimensional capacitor structure, a three-dimensional capacitor and a preparation method thereof |
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