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GB1143864A - - Google Patents

Info

Publication number
GB1143864A
GB1143864A GB1143864DA GB1143864A GB 1143864 A GB1143864 A GB 1143864A GB 1143864D A GB1143864D A GB 1143864DA GB 1143864 A GB1143864 A GB 1143864A
Authority
GB
United Kingdom
Prior art keywords
coating
oxide
carbide
jan
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of GB1143864A publication Critical patent/GB1143864A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6939—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • H10W74/40—
    • H10P14/6342—
    • H10P14/6529—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Products (AREA)
  • Formation Of Insulating Films (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

1,143,864. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 12 Jan., 1967 [15 Jan., 19661, No. 1668/67. Heading H1K. A diffusion mask or passivating coating on a semi-conductor body comprises a carbide and an oxide. In the preferred embodiment a coating of silicon carbide is deposited from the vapour phase to a depth of a few Á on an oxide coated silicon body maintained at 400‹ C., electrode areas &c. being masked during the process. The carbide bonds well to the oxide coating, which may consist of silica, silicon monoxide or a low melting oxide glass, to give a stable coating.
GB1143864D 1966-01-15 Expired GB1143864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ0029847 1966-01-15

Publications (1)

Publication Number Publication Date
GB1143864A true GB1143864A (en) 1900-01-01

Family

ID=7203716

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1143864D Expired GB1143864A (en) 1966-01-15

Country Status (3)

Country Link
DE (1) DE1564108A1 (en)
FR (1) FR1517876A (en)
GB (1) GB1143864A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
US4351894A (en) 1976-08-27 1982-09-28 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device using silicon carbide mask

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2700463A1 (en) * 1977-01-07 1978-07-13 Siemens Ag Semiconductor component edge passivating process - involves stacking of semiconductor components and passivating outer surface of stack

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
US4351894A (en) 1976-08-27 1982-09-28 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device using silicon carbide mask
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat

Also Published As

Publication number Publication date
DE1564108A1 (en) 1969-09-25
FR1517876A (en) 1968-03-22

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