GB1003023A - Process for the production of doped semiconductor materials - Google Patents
Process for the production of doped semiconductor materialsInfo
- Publication number
- GB1003023A GB1003023A GB36872/63A GB3687263A GB1003023A GB 1003023 A GB1003023 A GB 1003023A GB 36872/63 A GB36872/63 A GB 36872/63A GB 3687263 A GB3687263 A GB 3687263A GB 1003023 A GB1003023 A GB 1003023A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor material
- elements
- gallium
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/00—
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/2806—Employing storage or delay devices which preserve the pulse form of the echo signal, e.g. for comparing and combining echoes received during different periods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,003,023. Semi-conductor devices. SIEMENS & HALSKE. Sept. 19, 1963 [Sept. 21, 1962], No. 36872/63. Drawings to Specification. Heading H1K. A semi-conductor material is highly doped with two or more elements which produce the same type of conductivity, the total solubility of the doping elements in the semi-conductor material being greater than that of any one alone. Each doping element forms a eutectic mixture with the semi-conductor material, and the mean of the atomic radii of the doping elements is approximately equal to the atomic radius of the semi-conductor material (if this is an element) or of the element which is replaced in the semi-conductor crystal lattice (if the semi-conductor material is a compound). Examples given of suitable combinations of doping elements in silicon or germanium include phosphorus with arsenic, aluminium with gallium, boron and indium with either aluminium or gallium, lithium with either phosphorus or arsenic, and copper or zinc with either boron or aluminium or gallium. At least two elements from Group II or from Group VI may be incorporated as doping elements in an A III B V compound. Embodiments described include a tunnel diode and the emitter zone of a transistor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES81606A DE1292258B (en) | 1962-09-21 | 1962-09-21 | Method for producing a higher degree of doping in semiconductor materials than the solubility of a foreign substance in the semiconductor material allows |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1003023A true GB1003023A (en) | 1965-09-02 |
Family
ID=7509728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36872/63A Expired GB1003023A (en) | 1962-09-21 | 1963-09-19 | Process for the production of doped semiconductor materials |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH443233A (en) |
| GB (1) | GB1003023A (en) |
| NL (1) | NL297953A (en) |
-
0
- NL NL297953D patent/NL297953A/xx unknown
-
1963
- 1963-09-12 CH CH1126163A patent/CH443233A/en unknown
- 1963-09-19 GB GB36872/63A patent/GB1003023A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL297953A (en) | |
| CH443233A (en) | 1967-09-15 |
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