[go: up one dir, main page]

GB1093567A - Protection of silicon surfaces from silicon carbide deposition - Google Patents

Protection of silicon surfaces from silicon carbide deposition

Info

Publication number
GB1093567A
GB1093567A GB49703/65A GB4970365A GB1093567A GB 1093567 A GB1093567 A GB 1093567A GB 49703/65 A GB49703/65 A GB 49703/65A GB 4970365 A GB4970365 A GB 4970365A GB 1093567 A GB1093567 A GB 1093567A
Authority
GB
United Kingdom
Prior art keywords
silicon
silicon carbide
deposition
oxide layer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49703/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1093567A publication Critical patent/GB1093567A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6905—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P14/69215—
    • H10P95/00—
    • H10P14/6309—
    • H10P14/6322—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Weting (AREA)

Abstract

1,093,567. Semi-conductor devices. DOW CORNING CORPORATION. Nov. 23, 1965 [April 9, 1965], No. 49703/65. Heading H1K. In order to protect portions of a silicon surface against silicon carbide deposition they are provided with a layer of silicon oxide which is removed by etching after the deposition process has been completed so that any silicon carbide deposited thereon is also removed. In a preferred embodiment a silicon body is treated in an oxidizing atmosphere and the oxide layer so formed is removed from those portions of the surface on which silicon carbide is to be deposited. After the deposition the remaining protective oxide layer is removed with hydrofluoric acid. If the oxide is entirely covered, a hole must first be made through the overlying silicon carbide, e.g. by using a chlorine-oxygen etch, to allow the hydrofluoric acid to reach the oxide layer.
GB49703/65A 1965-04-09 1965-11-23 Protection of silicon surfaces from silicon carbide deposition Expired GB1093567A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44706565A 1965-04-09 1965-04-09

Publications (1)

Publication Number Publication Date
GB1093567A true GB1093567A (en) 1967-12-06

Family

ID=23774869

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49703/65A Expired GB1093567A (en) 1965-04-09 1965-11-23 Protection of silicon surfaces from silicon carbide deposition

Country Status (5)

Country Link
CH (1) CH482029A (en)
DE (1) DE1293518B (en)
GB (1) GB1093567A (en)
NL (1) NL6604771A (en)
SE (1) SE217961C1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4351894A (en) 1976-08-27 1982-09-28 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device using silicon carbide mask

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE920306C (en) * 1952-10-09 1954-11-18 Alweg Forschung G M B H Track-bound means of transport with facility for area traffic
DE930533C (en) * 1952-10-31 1955-07-18 Siemens Ag Device for inductive train control in rail vehicles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4351894A (en) 1976-08-27 1982-09-28 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device using silicon carbide mask
US4560642A (en) * 1976-08-27 1985-12-24 Toyko Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
CH482029A (en) 1969-11-30
SE217961C1 (en) 1968-01-02
NL6604771A (en) 1966-10-10
DE1293518B (en) 1969-04-24

Similar Documents

Publication Publication Date Title
CA1029475A (en) Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same
GB1208574A (en) Methods of manufacturing semiconductor devices
GB1190893A (en) A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
GB1027377A (en) Semiconductor device and method of making the same
GB1273150A (en) Improvements in and relating to methods of etching semiconductor body surfaces
JPS6437031A (en) Semiconductor device
GB1125650A (en) Insulating layers and devices incorporating such layers
GB1093567A (en) Protection of silicon surfaces from silicon carbide deposition
GB1356158A (en) Glass passivated semiconductor device
GB1526718A (en) Method of manufacturing a semiconductor device
GB995727A (en) Improvements in or relating to semiconductor devices
GB1066911A (en) Semiconductor devices
GB1051451A (en)
GB1086856A (en) Improvements in or relating to methods of manufacturing semi-conductor devices
GB1283769A (en) Semiconductor device having a passivation film and insulating films on a semiconductor substrate and method of making the same
GB1334345A (en) Etching
GB1339384A (en) Method for the manufacturing of a semiconductor device
JPS57164546A (en) Semiconductor device
JPS5513904A (en) Semiconductor device and its manufacturing method
GB1211657A (en) Metal etching process for semiconductor devices
GB1536763A (en) Manufacture of semiconductor body
GB958247A (en) Semiconductor devices and methods of fabricating same
ES349369A1 (en) A METHOD TO TREAT A FACE OF A SEMICONDUCTIVE BODY.
GB1208577A (en) Methods of manufacturing semiconductor devices
GB1173912A (en) Improvements in or relating to Semiconductor Devices