GB1068354A - Improvements relating to methods of growing crystals epitaxially - Google Patents
Improvements relating to methods of growing crystals epitaxiallyInfo
- Publication number
- GB1068354A GB1068354A GB13169/65A GB1316965A GB1068354A GB 1068354 A GB1068354 A GB 1068354A GB 13169/65 A GB13169/65 A GB 13169/65A GB 1316965 A GB1316965 A GB 1316965A GB 1068354 A GB1068354 A GB 1068354A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- methods
- current
- improvements relating
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
-
- H10P95/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
In a process for growing epitaxial crystals by deposition on a heated substrate from an inert gas carrying growth material, the substrate is initially heated in an inert gas containing one of the elemental components of the substrate. A substrate of GaAs may be heated to 700-800 DEG C. in a current of H2 containing As vapour (obtained by passing H2 over an As wafer); this current is then interrupted, and a current of H2 containing Ga and As (obtained by passing H2 over GaAs wafers) passed over the substrate to deposit GaAs. The apparatus used is as described in Specification 1,059,451.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0025649 | 1964-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1068354A true GB1068354A (en) | 1967-05-10 |
Family
ID=7202319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB13169/65A Expired GB1068354A (en) | 1964-04-14 | 1965-03-29 | Improvements relating to methods of growing crystals epitaxially |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1521303B2 (en) |
| GB (1) | GB1068354A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3079575B2 (en) * | 1990-12-20 | 2000-08-21 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
-
1964
- 1964-04-14 DE DE19641521303 patent/DE1521303B2/en active Pending
-
1965
- 1965-03-29 GB GB13169/65A patent/GB1068354A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1521303A1 (en) | 1969-05-08 |
| DE1521303B2 (en) | 1972-11-02 |
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