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GB1068200A - High voltage semiconductor device - Google Patents

High voltage semiconductor device

Info

Publication number
GB1068200A
GB1068200A GB47619/64A GB4761964A GB1068200A GB 1068200 A GB1068200 A GB 1068200A GB 47619/64 A GB47619/64 A GB 47619/64A GB 4761964 A GB4761964 A GB 4761964A GB 1068200 A GB1068200 A GB 1068200A
Authority
GB
United Kingdom
Prior art keywords
wafer
type
depression
layer
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47619/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US325873A external-priority patent/US3278347A/en
Priority claimed from US325872A external-priority patent/US3320496A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB1068200A publication Critical patent/GB1068200A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/693—
    • H10P50/694—
    • H10P95/00—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

1,068,200. Semi-conductor devices. INTERNATIONAL RECTIFIER CORPORATION. Nov. 23, 1964 [Nov. 26, 1963], No. 47619/64. Heading H1K. A controlled rectifier leaving the structure shown is formed by taking an N-type silicon wafer, diffusively doping its entire surface to form a surrounding P-type layer, etching a depression 22 in one major surface of the P-type layer, epitaxially depositing N-type silicon in the depression, and finally removing the P-type material from the periphery of the wafer. Subsequently electrodes are applied: an alloyed-on gold or gold-antimony foil to the epitaxial layer; an alloyed on three layer electrode to the base of the wafer, consisting of layers of aluminium-silicon alloy, molybdenum and silver; and a wire constituting a gate electrode to the P-type region surrounding the epitaxial layer in the depression. An annular groove 70 (Fig. 13, not shown) may be etched in the upper surface of the wafer and cut through the wafer junctions in the manner described in Specification 1,068,199.
GB47619/64A 1963-11-26 1964-11-23 High voltage semiconductor device Expired GB1068200A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US325873A US3278347A (en) 1963-11-26 1963-11-26 High voltage semiconductor device
US325872A US3320496A (en) 1963-11-26 1963-11-26 High voltage semiconductor device

Publications (1)

Publication Number Publication Date
GB1068200A true GB1068200A (en) 1967-05-10

Family

ID=26985151

Family Applications (2)

Application Number Title Priority Date Filing Date
GB47618/64A Expired GB1068199A (en) 1963-11-26 1964-11-23 High voltage semiconductor device
GB47619/64A Expired GB1068200A (en) 1963-11-26 1964-11-23 High voltage semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB47618/64A Expired GB1068199A (en) 1963-11-26 1964-11-23 High voltage semiconductor device

Country Status (1)

Country Link
GB (2) GB1068199A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2359415A (en) * 2000-02-21 2001-08-22 Westcode Semiconductors Ltd Profiling of semiconductor wafer to prevent edge breakdown
CN109950308A (en) * 2019-03-20 2019-06-28 江苏东晨电子科技有限公司 Hyperbolicity table top thyristor and preparation method thereof

Also Published As

Publication number Publication date
GB1068199A (en) 1967-05-10

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