[go: up one dir, main page]

FR3115631B1 - Composant semiconducteur de circuit intégré - Google Patents

Composant semiconducteur de circuit intégré Download PDF

Info

Publication number
FR3115631B1
FR3115631B1 FR2010911A FR2010911A FR3115631B1 FR 3115631 B1 FR3115631 B1 FR 3115631B1 FR 2010911 A FR2010911 A FR 2010911A FR 2010911 A FR2010911 A FR 2010911A FR 3115631 B1 FR3115631 B1 FR 3115631B1
Authority
FR
France
Prior art keywords
region
ciso
integrated circuit
gate region
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2010911A
Other languages
English (en)
Other versions
FR3115631A1 (fr
Inventor
BENOîT FROMENT
Thomas Cabout
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2010911A priority Critical patent/FR3115631B1/fr
Priority to US17/505,340 priority patent/US12328896B2/en
Priority to CN202122548939.XU priority patent/CN217182173U/zh
Priority to CN202111231659.4A priority patent/CN114496957A/zh
Publication of FR3115631A1 publication Critical patent/FR3115631A1/fr
Application granted granted Critical
Publication of FR3115631B1 publication Critical patent/FR3115631B1/fr
Priority to US19/205,427 priority patent/US20250275172A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10W10/014—
    • H10W42/405—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H10D30/615—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel comprising a MOS gate electrode and at least one non-MOS gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10W10/17—
    • H10W20/056—
    • H10W20/0698—
    • H10W20/089—
    • H10W20/20—
    • H10W42/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

Selon un aspect, il est proposé un circuit intégré comprenant un substrat semiconducteur (SUB) ayant un premier type de conductivité et - un premier composant semiconducteur (CS1, CS2) comportant : ○ une région semiconductrice enterrée (RE1, RE2, CISO) et ayant un deuxième type de conductivité opposé au premier type de conductivité, ○ une première région de grille (PRG) et une deuxième région de grille (DRG) s’étendant chacune en profondeur depuis une face avant (FA) du substrat (SUB) jusqu’à la région semiconductrice enterrée (RE1, RE2, CISO), ○ une troisième région de grille (TRG) s’étendant en profondeur depuis la face avant (FA) du substrat semiconducteur et étant connectée électriquement à la région semiconductrice enterrée (RE1, RE2, CISO), ○ une zone, dite zone active (ZA), délimitée par la première région de grille (PRG), la deuxième région de grille (DRG) et la région semiconductrice enterrée (RE1, RE2, CISO). Figure pour l’abrégé : Figure 2
FR2010911A 2020-10-23 2020-10-23 Composant semiconducteur de circuit intégré Active FR3115631B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2010911A FR3115631B1 (fr) 2020-10-23 2020-10-23 Composant semiconducteur de circuit intégré
US17/505,340 US12328896B2 (en) 2020-10-23 2021-10-19 Semiconductor integrated circuit component
CN202122548939.XU CN217182173U (zh) 2020-10-23 2021-10-22 集成电路
CN202111231659.4A CN114496957A (zh) 2020-10-23 2021-10-22 半导体集成电路部件
US19/205,427 US20250275172A1 (en) 2020-10-23 2025-05-12 Semiconductor integrated circuit component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2010911 2020-10-23
FR2010911A FR3115631B1 (fr) 2020-10-23 2020-10-23 Composant semiconducteur de circuit intégré

Publications (2)

Publication Number Publication Date
FR3115631A1 FR3115631A1 (fr) 2022-04-29
FR3115631B1 true FR3115631B1 (fr) 2022-11-04

Family

ID=74758901

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2010911A Active FR3115631B1 (fr) 2020-10-23 2020-10-23 Composant semiconducteur de circuit intégré

Country Status (3)

Country Link
US (2) US12328896B2 (fr)
CN (2) CN114496957A (fr)
FR (1) FR3115631B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3115631B1 (fr) * 2020-10-23 2022-11-04 St Microelectronics Crolles 2 Sas Composant semiconducteur de circuit intégré

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
NL7413264A (nl) * 1974-10-09 1976-04-13 Philips Nv Geintegreerde schakeling.
US4881105A (en) * 1988-06-13 1989-11-14 International Business Machines Corporation Integrated trench-transistor structure and fabrication process
US5420447A (en) * 1993-01-29 1995-05-30 Sgs-Thomson Microelectronics, Inc. Double buffer base gate array cell
US5585675A (en) * 1994-05-11 1996-12-17 Harris Corporation Semiconductor die packaging tub having angularly offset pad-to-pad via structure configured to allow three-dimensional stacking and electrical interconnections among multiple identical tubs
US5780883A (en) * 1997-02-28 1998-07-14 Translogic Technology, Inc. Gate array architecture for multiplexer based circuits
US5973375A (en) * 1997-06-06 1999-10-26 Hughes Electronics Corporation Camouflaged circuit structure with step implants
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7241655B2 (en) * 2004-08-30 2007-07-10 Micron Technology, Inc. Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
US7423310B2 (en) * 2004-09-29 2008-09-09 Infineon Technologies Ag Charge-trapping memory cell and charge-trapping memory device
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor
US8350318B2 (en) * 2006-03-06 2013-01-08 Semiconductor Components Industries, Llc Method of forming an MOS transistor and structure therefor
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
US7741630B2 (en) * 2008-02-08 2010-06-22 Qimonda Ag Resistive memory element and method of fabrication
JP5612268B2 (ja) * 2008-03-28 2014-10-22 株式会社東芝 半導体装置及びｄｃ−ｄｃコンバータ
US20100123193A1 (en) * 2008-11-14 2010-05-20 Burke Peter A Semiconductor component and method of manufacture
US8471331B2 (en) * 2011-08-15 2013-06-25 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device with source-substrate connection and structure
KR102019375B1 (ko) * 2013-03-05 2019-09-09 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법, 그리고 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템
JP6478316B2 (ja) * 2014-11-10 2019-03-06 ローム株式会社 トレンチゲート構造を備えた半導体装置およびその製造方法
FR3048103B1 (fr) * 2016-02-22 2018-03-23 Stmicroelectronics (Rousset) Sas Procede de detection d'un amincissement du substrat semi-conducteur d'un circuit integre depuis sa face arriere et circuit integre correspondant
DE112017002221B4 (de) * 2016-04-27 2025-12-04 Mitsubishi Electric Corporation Halbleiterbauelement und Leistungswandlervorrichtung
JP2018022776A (ja) * 2016-08-03 2018-02-08 ルネサスエレクトロニクス株式会社 半導体装置
US10692863B2 (en) * 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
US10861931B2 (en) * 2016-12-08 2020-12-08 Cree, Inc. Power semiconductor devices having gate trenches and buried edge terminations and related methods
US10147785B2 (en) * 2017-01-26 2018-12-04 Semiconductor Components Industries, Llc High-voltage superjunction field effect transistor
KR102373818B1 (ko) * 2017-07-18 2022-03-14 삼성전자주식회사 반도체 장치
FR3069954B1 (fr) * 2017-08-01 2020-02-07 Stmicroelectronics (Rousset) Sas Procede de detection d'un amincissement du substrat d'un circuit integre par sa face arriere, et circuit integre associe
KR102356992B1 (ko) * 2017-08-03 2022-02-03 삼성디스플레이 주식회사 유기 발광 표시 장치
FR3070535A1 (fr) * 2017-08-28 2019-03-01 Stmicroelectronics (Crolles 2) Sas Circuit integre avec element capacitif a structure verticale, et son procede de fabrication
TW201937607A (zh) 2018-02-23 2019-09-16 力智電子股份有限公司 溝槽式閘極金氧半場效電晶體
JP7119422B2 (ja) * 2018-02-28 2022-08-17 富士電機株式会社 縦型半導体装置及び縦型半導体装置の製造方法
FR3085540B1 (fr) * 2018-08-31 2020-09-25 St Microelectronics Rousset Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication
CN111179792B (zh) * 2018-11-12 2021-05-07 重庆先进光电显示技术研究院 一种显示面板、检测方法及显示装置
US10985248B2 (en) * 2018-11-16 2021-04-20 Infineon Technologies Ag SiC power semiconductor device with integrated Schottky junction
CN113196463B (zh) * 2018-12-26 2024-03-01 株式会社索思未来 半导体集成电路装置
IT201900013416A1 (it) * 2019-07-31 2021-01-31 St Microelectronics Srl Dispositivo di potenza a bilanciamento di carica e procedimento di fabbricazione del dispositivo di potenza a bilanciamento di carica
CN114503279A (zh) * 2019-08-12 2022-05-13 麦斯功率半导体股份有限公司 具选择性屏蔽式凹陷场效电板的高密度功率元件
US11355581B2 (en) * 2019-08-19 2022-06-07 Stmicroelectronics (Crolles 2) Sas Device comprising a transistor
JP7297709B2 (ja) * 2020-03-19 2023-06-26 株式会社東芝 半導体装置及び半導体回路
KR102771078B1 (ko) * 2020-04-20 2025-02-19 삼성전자주식회사 반도체 장치
US12224349B2 (en) * 2020-05-07 2025-02-11 Intel Corporation Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
US11894457B2 (en) * 2020-05-09 2024-02-06 Joulwatt Technology Co., Ltd. Semiconductor device and manufacturing method thereof
US11515308B2 (en) * 2020-06-12 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with hybrid cell design
US12176392B2 (en) * 2020-06-25 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
JP7574558B2 (ja) * 2020-07-13 2024-10-29 富士電機株式会社 半導体装置
FR3115631B1 (fr) 2020-10-23 2022-11-04 St Microelectronics Crolles 2 Sas Composant semiconducteur de circuit intégré
US12211450B2 (en) * 2022-05-23 2025-01-28 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and display device
US20230411446A1 (en) * 2022-06-21 2023-12-21 Wolfspeed, Inc. Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods
US20240234415A1 (en) * 2023-01-06 2024-07-11 International Business Machines Corporation Semiconductor transistor arrays
CN118829221A (zh) * 2023-04-20 2024-10-22 兆易创新科技集团股份有限公司 Nor型存储阵列、nor型存储器和电子设备

Also Published As

Publication number Publication date
FR3115631A1 (fr) 2022-04-29
CN217182173U (zh) 2022-08-12
US20220131005A1 (en) 2022-04-28
US20250275172A1 (en) 2025-08-28
CN114496957A (zh) 2022-05-13
US12328896B2 (en) 2025-06-10

Similar Documents

Publication Publication Date Title
US6555883B1 (en) Lateral power MOSFET for high switching speeds
US20020140024A1 (en) Semiconductor device having divided active regions with comb-teeth electrodes thereon
NL1013625C2 (nl) Laterale hoogspanning halfgeleiderinrichting.
JPH11103072A (ja) 半導体装置およびその製造方法
EP1399952A4 (fr) Integration d'un dispositif opto-electronique
FR3115631B1 (fr) Composant semiconducteur de circuit intégré
JP3508670B2 (ja) 半導体モジュール
FR3114444B1 (fr) Puce à routage bifonctionnel et procédé de fabrication associé
EP0558133A1 (fr) Circuit intégré CMOS
JPS638624B2 (fr)
FR2360994A1 (fr) Circuit integre semi-conducteur, logique a transistors a induction statique
EP0752724A3 (fr) Méthode pour la formation d'un transistor à effet de champ avec contact de drain allié
KR910008844A (ko) 반도체 장치
KR840002777A (ko) 마이크로웨이브 파장효과 트랜지스터
FR3112026B1 (fr) Dispositif optoélectronique et procédé de fabrication
JPS60223175A (ja) 超電導スイツチングデバイス
EP4343826A3 (fr) Dispositifs de circuit intégré comprenant une structure de réseau de distribution d'énergie côté arrière et leurs procédés de formation
JPS63111661A (ja) 半導体集積回路装置
JP2000307129A (ja) 可変容量回路
KR100266838B1 (ko) 전계효과형 트랜지스터
JPH09223700A (ja) 高出力用バイポーラトランジスタ
EP0056191A2 (fr) Logique d'injection intégrée
US4352115A (en) Transit time diode with an input structure formed by a matrix of micropoints
US20240379552A1 (en) Layouts for conductive layers in integrated circuits
JP2795220B2 (ja) 電界効果トランジスタ

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20220429

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6