FR3039925B1 - Procede d'aplanissement d'une plaquette - Google Patents

Procede d'aplanissement d'une plaquette

Info

Publication number: FR3039925B1
Authority: FR; France
Prior art keywords: plateboard; flowing
Prior art date: 2015-08-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

FR1557609A

Other languages

English (en)

Other versions

FR3039925A1 (fr

Inventor

Francois Guyader

Emmanuel Gourvest

Daillon Patrick Gros

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics Crolles 2 SAS

Original Assignee

Commissariat a lEnergie Atomique CEA

STMicroelectronics Crolles 2 SAS

Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-08-07

Filing date

2015-08-07

Publication date

2018-03-02

2015-08-07 Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics Crolles 2 SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA

2015-08-07 Priority to FR1557609A priority Critical patent/FR3039925B1/fr

2016-08-01 Priority to US15/225,164 priority patent/US20170040285A1/en

2017-02-10 Publication of FR3039925A1 publication Critical patent/FR3039925A1/fr

2018-03-02 Application granted granted Critical

2018-03-02 Publication of FR3039925B1 publication Critical patent/FR3039925B1/fr

Status Active legal-status Critical Current

2035-08-07 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10P52/403—
- H10P54/00—
- H10P95/062—
- H10W72/0198—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10W72/01353—
- H10W72/01359—
- H10W72/07311—
- H10W72/07331—
- H10W72/322—

FR1557609A 2015-08-07 2015-08-07 Procede d'aplanissement d'une plaquette Active FR3039925B1 (fr)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
FR1557609A FR3039925B1 (fr)	2015-08-07	2015-08-07	Procede d'aplanissement d'une plaquette
US15/225,164 US20170040285A1 (en)	2015-08-07	2016-08-01	Wafer planarization method

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR1557609A FR3039925B1 (fr)	2015-08-07	2015-08-07	Procede d'aplanissement d'une plaquette

Publications (2)

Publication Number	Publication Date
FR3039925A1 FR3039925A1 (fr)	2017-02-10
FR3039925B1 true FR3039925B1 (fr)	2018-03-02

Family

ID=54291493

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR1557609A Active FR3039925B1 (fr)	2015-08-07	2015-08-07	Procede d'aplanissement d'une plaquette

Country Status (2)

Country	Link
US (1)	US20170040285A1 (fr)
FR (1)	FR3039925B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN107644877A (zh) *	2017-08-31	2018-01-30	长江存储科技有限责任公司	一种三维存储器台阶部位填充方法及三维存储器
CN112071802B (zh) *	2020-08-31	2023-08-11	上海华力集成电路制造有限公司	晶圆键合工艺中预防空洞缺陷的方法及其装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0750700B2 (ja) *	1989-06-27	1995-05-31	三菱電機株式会社	半導体チップの製造方法
JPH10135425A (ja) *	1996-11-05	1998-05-22	Hitachi Ltd	半導体集積回路装置およびその製造方法
JPH11297972A (ja) *	1998-04-10	1999-10-29	Fujitsu Ltd	半導体装置の製造方法
KR100268419B1 (ko) *	1998-08-14	2000-10-16	윤종용	고집적 반도체 메모리 장치 및 그의 제조 방법
US6984571B1 (en) *	1999-10-01	2006-01-10	Ziptronix, Inc.	Three dimensional device integration method and integrated device
KR100806034B1 (ko) *	2006-12-05	2008-02-26	동부일렉트로닉스 주식회사	Ｍｉｍ 캐패시터를 가지는 반도체 소자 및 그 제조방법
US7901974B2 (en) *	2008-02-08	2011-03-08	Omnivision Technologies, Inc.	Masked laser anneal during fabrication of backside illuminated image sensors
JP2013062382A (ja) *	2011-09-13	2013-04-04	Toshiba Corp	半導体装置およびその製造方法

2015
- 2015-08-07 FR FR1557609A patent/FR3039925B1/fr active Active
2016
- 2016-08-01 US US15/225,164 patent/US20170040285A1/en not_active Abandoned

Also Published As

Publication number	Publication date
US20170040285A1 (en)	2017-02-09
FR3039925A1 (fr)	2017-02-10

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DK3313453T3 (da)	2021-07-26	Metode til billeddannelse af gigt
IT201600095893A1 (it)	2018-03-23	Metodo per implementare realta' aumentata

Legal Events

Date	Code	Title	Description
2016-07-20	PLFP	Fee payment	Year of fee payment: 2
2017-02-10	PLSC	Publication of the preliminary search report	Effective date: 20170210
2017-07-20	PLFP	Fee payment	Year of fee payment: 3
2017-09-01	TP	Transmission of property	Owner name: STMICROELECTRONICS CROLLES 2 SAS, FR Effective date: 20170728
2018-07-20	PLFP	Fee payment	Year of fee payment: 4
2019-07-22	PLFP	Fee payment	Year of fee payment: 5
2020-07-21	PLFP	Fee payment	Year of fee payment: 6
2021-07-22	PLFP	Fee payment	Year of fee payment: 7
2022-07-21	PLFP	Fee payment	Year of fee payment: 8
2023-07-20	PLFP	Fee payment	Year of fee payment: 9
2024-07-23	PLFP	Fee payment	Year of fee payment: 10
2025-07-23	PLFP	Fee payment	Year of fee payment: 11