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FR3039921B1 - Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom - Google Patents

Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom Download PDF

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Publication number
FR3039921B1
FR3039921B1 FR1557576A FR1557576A FR3039921B1 FR 3039921 B1 FR3039921 B1 FR 3039921B1 FR 1557576 A FR1557576 A FR 1557576A FR 1557576 A FR1557576 A FR 1557576A FR 3039921 B1 FR3039921 B1 FR 3039921B1
Authority
FR
France
Prior art keywords
memory cell
programming
controlling
write operation
data write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1557576A
Other languages
English (en)
Other versions
FR3039921A1 (fr
Inventor
Francois Tailliet
Marc Battista
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1557576A priority Critical patent/FR3039921B1/fr
Priority to CN201910936527.8A priority patent/CN110706730B/zh
Priority to CN201610099467.5A priority patent/CN106448731B/zh
Priority to US15/055,552 priority patent/US9455034B1/en
Priority to DE102016104343.5A priority patent/DE102016104343B4/de
Priority to US15/244,521 priority patent/US9576670B1/en
Publication of FR3039921A1 publication Critical patent/FR3039921A1/fr
Application granted granted Critical
Publication of FR3039921B1 publication Critical patent/FR3039921B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Une opération d'écriture d'au moins une donnée dans au moins une cellule-mémoire du type mémoire morte électriquement programmable et effaçable, comprend au moins une étape d'effacement ou de programmation de ladite cellule par une impulsion correspondante d'effacement ou de programmation. On contrôle le bon ou le mauvais déroulement de l'opération d'écriture par une analyse de la forme de ladite impulsion d'effacement ou de programmation (IMPB) au cours de l'étape correspondante d'effacement ou de programmation, le résultat de cette analyse étant représentatif d'un déroulement correct ou non de l'opération d'écriture.
FR1557576A 2015-08-06 2015-08-06 Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom Expired - Fee Related FR3039921B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1557576A FR3039921B1 (fr) 2015-08-06 2015-08-06 Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom
CN201910936527.8A CN110706730B (zh) 2015-08-06 2016-02-23 用于管理eeprom存储器单元中的数据的写入周期的方法和系统
CN201610099467.5A CN106448731B (zh) 2015-08-06 2016-02-23 用于管理eeprom存储器单元中的数据的写入周期的方法和系统
US15/055,552 US9455034B1 (en) 2015-08-06 2016-02-27 Method and system for managing a writing cycle of a data in a EEPROM memory cell
DE102016104343.5A DE102016104343B4 (de) 2015-08-06 2016-03-09 Verfahren und System zur Kontrolle eines Schreibens eines Datums in eine Speicherzelle vom Typ EEPROM
US15/244,521 US9576670B1 (en) 2015-08-06 2016-08-23 Method and system for managing a writing cycle of a data in a EEPROM memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1557576 2015-08-06
FR1557576A FR3039921B1 (fr) 2015-08-06 2015-08-06 Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom

Publications (2)

Publication Number Publication Date
FR3039921A1 FR3039921A1 (fr) 2017-02-10
FR3039921B1 true FR3039921B1 (fr) 2018-02-16

Family

ID=55178051

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1557576A Expired - Fee Related FR3039921B1 (fr) 2015-08-06 2015-08-06 Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom

Country Status (4)

Country Link
US (2) US9455034B1 (fr)
CN (2) CN110706730B (fr)
DE (1) DE102016104343B4 (fr)
FR (1) FR3039921B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3041807B1 (fr) * 2015-09-24 2017-12-08 Stmicroelectronics Rousset Procede de controle d'un cycle d'ecriture de memoire de type eeprom et dispositif correspondant
FR3048115B1 (fr) * 2016-02-18 2018-07-13 Stmicroelectronics (Rousset) Sas Dispositif et procede de gestion du claquage de transistors d'acces de memoire eeprom.
CN109215724B (zh) * 2017-07-05 2021-01-15 北京兆易创新科技股份有限公司 存储器自动检测和修复的方法及装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5371709A (en) * 1993-04-01 1994-12-06 Microchip Technology Incorporated Power management system for serial EEPROM device
US5623436A (en) * 1993-06-17 1997-04-22 Information Storage Devices Method and apparatus for adjustment and control of an iterative method of recording analog signals with on-chip trimming techniques
FR2749698B1 (fr) * 1996-06-07 1998-09-04 Inside Technologies Memoire remanente effacable et programmable electriquement, protegee contre les coupures d'alimentation
ATE285162T1 (de) 1997-04-16 2005-01-15 Dsp Factory Ltd Gerät und verfahren zur programmierung eines hörhilfegerätes
JP2000021184A (ja) * 1998-07-02 2000-01-21 Texas Instr Inc <Ti> 多重レベル・セル・フラッシュ・メモリ・デバイスをプログラムおよび安定化するための方法とデバイス
US6011721A (en) * 1998-08-12 2000-01-04 Advanced Micro Devices Method for sensing state of erasure of a flash electrically erasable programmable read-only memory (EEPROM)
US6421757B1 (en) * 1998-09-30 2002-07-16 Conexant Systems, Inc Method and apparatus for controlling the programming and erasing of flash memory
JP4055103B2 (ja) * 2000-10-02 2008-03-05 株式会社ルネサステクノロジ 不揮発性メモリおよびそれを内蔵した半導体集積回路並びに不揮発性メモリの書込み方法
JP4249992B2 (ja) * 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
FR2858457A1 (fr) * 2003-07-31 2005-02-04 St Microelectronics Sa Procede d'effacement/programmation d'une memoire non volatile effacable electriquement
JP2005235287A (ja) * 2004-02-19 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置のプログラミング方法、プログラミング装置、及び、不揮発性半導体記憶装置
DE102004025123A1 (de) 2004-05-21 2005-07-21 Siemens Audiologische Technik Gmbh Hörhilfegerät oder Hörgerätesystem mit akustischer Batterieanzeige
FR2874449B1 (fr) * 2004-08-17 2008-04-04 Atmel Corp Circuit de retard de programme auto-adaptatif pour memoires programmables
KR100645051B1 (ko) * 2004-10-26 2006-11-10 삼성전자주식회사 비트 라인 전압에 따른 프로그램 실행 구간의서스펜드/리쥼 기능을 갖는 불 휘발성 메모리 장치 및그것의 프로그램 방법
KR100748553B1 (ko) * 2004-12-20 2007-08-10 삼성전자주식회사 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치
FR2890484A1 (fr) 2005-09-06 2007-03-09 St Microelectronics Sa Circuit integre sans contact passif comprenant un drapeau de surveillance d'une tension d'effacement-programmation.
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
EP1870905B1 (fr) * 2006-06-21 2009-12-30 STMicroelectronics S.r.l. Procédé et dispositif pour programmer électriquement des cellules mémoire à sémiconducteur
TW200807421A (en) * 2006-06-26 2008-02-01 Sandisk Corp Method and system for programming non-volatile memory using variable amplitude programming pulses
CN101345088A (zh) * 2007-05-14 2009-01-14 桑迪士克Il有限公司 使用综合特征来测量存储器中的阈值电压分布
US7903461B2 (en) * 2008-09-22 2011-03-08 Micron Technology, Inc. Sensing for memory read and program verify operations in a non-volatile memory device
US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
KR101666941B1 (ko) * 2010-07-06 2016-10-17 삼성전자주식회사 비휘발성 메모리 장치와 이를 포함하는 반도체 시스템
US8730722B2 (en) * 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US8897085B2 (en) * 2012-03-19 2014-11-25 Sandisk Technologies Inc. Immunity against temporary and short power drops in non-volatile memory: pausing techniques
FR2993089B1 (fr) * 2012-07-09 2014-07-18 Inside Secure Procede d'effacement ou de programmation d'une memoire factice protege contre la detection
TWI495236B (zh) * 2012-12-21 2015-08-01 System General Corp 控制電路及控制方法
DK3253076T3 (da) * 2014-02-12 2019-12-09 Oticon As Høreanordning med advarsel om lav ladestand
KR20160047667A (ko) * 2014-10-22 2016-05-03 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법

Also Published As

Publication number Publication date
DE102016104343B4 (de) 2021-03-04
CN106448731B (zh) 2019-10-25
US9576670B1 (en) 2017-02-21
CN110706730B (zh) 2024-07-12
US20170040060A1 (en) 2017-02-09
DE102016104343A1 (de) 2017-02-09
CN110706730A (zh) 2020-01-17
US9455034B1 (en) 2016-09-27
FR3039921A1 (fr) 2017-02-10
CN106448731A (zh) 2017-02-22

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