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FR3007185B1 - Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement - Google Patents

Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement

Info

Publication number
FR3007185B1
FR3007185B1 FR1355439A FR1355439A FR3007185B1 FR 3007185 B1 FR3007185 B1 FR 3007185B1 FR 1355439 A FR1355439 A FR 1355439A FR 1355439 A FR1355439 A FR 1355439A FR 3007185 B1 FR3007185 B1 FR 3007185B1
Authority
FR
France
Prior art keywords
type memory
plan
methods
device associating
memory plan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1355439A
Other languages
English (en)
Other versions
FR3007185A1 (fr
Inventor
Francois Tailliet
Marc Battista
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1355439A priority Critical patent/FR3007185B1/fr
Priority to US14/298,264 priority patent/US9245624B2/en
Publication of FR3007185A1 publication Critical patent/FR3007185A1/fr
Application granted granted Critical
Publication of FR3007185B1 publication Critical patent/FR3007185B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
FR1355439A 2013-06-12 2013-06-12 Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement Expired - Fee Related FR3007185B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1355439A FR3007185B1 (fr) 2013-06-12 2013-06-12 Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement
US14/298,264 US9245624B2 (en) 2013-06-12 2014-06-06 Memory device including a SRAM memory plane and a non volatile memory plane, and operating methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1355439A FR3007185B1 (fr) 2013-06-12 2013-06-12 Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement

Publications (2)

Publication Number Publication Date
FR3007185A1 FR3007185A1 (fr) 2014-12-19
FR3007185B1 true FR3007185B1 (fr) 2015-06-19

Family

ID=48874398

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1355439A Expired - Fee Related FR3007185B1 (fr) 2013-06-12 2013-06-12 Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement

Country Status (2)

Country Link
US (1) US9245624B2 (fr)
FR (1) FR3007185B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3018952B1 (fr) 2014-03-21 2016-04-15 Stmicroelectronics Rousset Structure integree comportant des transistors mos voisins
FR3018944A1 (fr) 2014-03-21 2015-09-25 St Microelectronics Rousset Dispositif de memoire associant un plan memoire du type sram et un plan-memoire du type non volatil, durci contre des basculements accidentels
KR102517711B1 (ko) * 2016-06-30 2023-04-04 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
FR3107971B1 (fr) * 2020-03-03 2022-02-18 St Microelectronics Rousset Procédé d’écriture de données dans une mémoire d’un transpondeur sans contact, et dispositif de transpondeur sans contact correspondant.

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4132904A (en) 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4467451A (en) 1981-12-07 1984-08-21 Hughes Aircraft Company Nonvolatile random access memory cell
US4980859A (en) 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements
US5357463A (en) * 1992-11-17 1994-10-18 Micron Semiconductor, Inc. Method for reverse programming of a flash EEPROM
US5519663A (en) 1994-09-28 1996-05-21 Sci Systems, Inc. Preservation system for volatile memory with nonvolatile backup memory
US5602776A (en) * 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
US6097629A (en) * 1998-09-30 2000-08-01 Simtek Corporation Non-volatile, static random access memory with high speed store capability
EP1703521A1 (fr) * 1999-02-01 2006-09-20 Hitachi, Ltd. Circuit semi-conducteur intégré et élément de mémoire non volatile
US6414873B1 (en) * 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
DE602004015457D1 (de) * 2003-06-17 2008-09-11 Nxp Bv Nichtflüchtige, statische speicherzelle
US6961279B2 (en) * 2004-03-10 2005-11-01 Linear Technology Corporation Floating gate nonvolatile memory circuits and methods
US7164608B2 (en) 2004-07-28 2007-01-16 Aplus Flash Technology, Inc. NVRAM memory cell architecture that integrates conventional SRAM and flash cells
US20060193174A1 (en) * 2005-02-25 2006-08-31 O2Ic Non-volatile and static random access memory cells sharing the same bitlines
US8331150B2 (en) * 2008-01-03 2012-12-11 Aplus Flash Technology, Inc. Integrated SRAM and FLOTOX EEPROM memory device
US7639546B2 (en) * 2008-02-26 2009-12-29 Nscore Inc. Nonvolatile memory utilizing MIS memory transistors with function to correct data reversal
US8018768B2 (en) 2009-08-18 2011-09-13 United Microelectronics Corp. Non-volatile static random access memory (NVSRAM) device
US8964470B2 (en) * 2012-09-25 2015-02-24 Aplus Flash Technology, Inc. Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays
US8971113B2 (en) * 2012-10-30 2015-03-03 Aplus Flash Technology, Inc. Pseudo-8T NVSRAM cell with a charge-follower

Also Published As

Publication number Publication date
US9245624B2 (en) 2016-01-26
FR3007185A1 (fr) 2014-12-19
US20140369120A1 (en) 2014-12-18

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