FR3001225B1 - Procede de fabrication d’une structure par collage direct - Google Patents
Procede de fabrication d’une structure par collage directInfo
- Publication number
- FR3001225B1 FR3001225B1 FR1350568A FR1350568A FR3001225B1 FR 3001225 B1 FR3001225 B1 FR 3001225B1 FR 1350568 A FR1350568 A FR 1350568A FR 1350568 A FR1350568 A FR 1350568A FR 3001225 B1 FR3001225 B1 FR 3001225B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing direct
- direct collage
- collage structure
- manufacturing
- collage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10P90/1914—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H10W10/181—
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1350568A FR3001225B1 (fr) | 2013-01-22 | 2013-01-22 | Procede de fabrication d’une structure par collage direct |
| US14/758,740 US10103052B2 (en) | 2013-01-22 | 2014-01-22 | Method for manufacturing a structure by direct bonding |
| PCT/FR2014/050116 WO2014114876A1 (fr) | 2013-01-22 | 2014-01-22 | Procédé de fabrication d'une structure par collage direct |
| JP2015553150A JP2016509372A (ja) | 2013-01-22 | 2014-01-22 | 直接接合による構造体の製造方法 |
| EP14704610.6A EP2948976A1 (fr) | 2013-01-22 | 2014-01-22 | Procédé de fabrication d'une structure par collage direct |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1350568A FR3001225B1 (fr) | 2013-01-22 | 2013-01-22 | Procede de fabrication d’une structure par collage direct |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3001225A1 FR3001225A1 (fr) | 2014-07-25 |
| FR3001225B1 true FR3001225B1 (fr) | 2016-01-22 |
Family
ID=48140009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1350568A Expired - Fee Related FR3001225B1 (fr) | 2013-01-22 | 2013-01-22 | Procede de fabrication d’une structure par collage direct |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10103052B2 (fr) |
| EP (1) | EP2948976A1 (fr) |
| JP (1) | JP2016509372A (fr) |
| FR (1) | FR3001225B1 (fr) |
| WO (1) | WO2014114876A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742606B (zh) * | 2017-10-30 | 2024-04-02 | 桂林电子科技大学 | 一种键合晶圆的结构及其制备方法 |
| US10541214B2 (en) | 2018-04-27 | 2020-01-21 | Juniper Networks, Inc. | Enhanced bonding between III-V material and oxide material |
| JP2020030299A (ja) * | 2018-08-22 | 2020-02-27 | 日本電気硝子株式会社 | 光学部品の製造方法 |
| CN111868918B (zh) * | 2018-09-03 | 2022-07-12 | 浙江三时纪新材科技有限公司 | 一种半导体封装材料的制备方法以及由此得到的半导体封装材料 |
| KR102550295B1 (ko) | 2019-06-21 | 2023-06-30 | 미쓰비시덴키 가부시키가이샤 | 복합 기판의 제조 방법 및 복합 기판 |
| US11355379B1 (en) * | 2020-11-24 | 2022-06-07 | International Business Machines Corporation | Oxide-bonded wafer pair separation using laser debonding |
| WO2025017863A1 (fr) * | 2023-07-19 | 2025-01-23 | 三菱電機株式会社 | Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4115046A1 (de) * | 1991-05-08 | 1992-11-12 | Fraunhofer Ges Forschung | Direktes substratbonden |
| WO2003010806A2 (fr) * | 2001-07-26 | 2003-02-06 | Massachusetts Institute Of Technology | Assemblage de substrat semi-conducteur par fusion de croissance par transfert de masse |
| DE102004030612B3 (de) * | 2004-06-24 | 2006-04-20 | Siltronic Ag | Halbleitersubstrat und Verfahren zu dessen Herstellung |
| US7261793B2 (en) * | 2004-08-13 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | System and method for low temperature plasma-enhanced bonding |
| JP5364368B2 (ja) * | 2005-04-21 | 2013-12-11 | エイオーネックス・テクノロジーズ・インコーポレイテッド | 基板の製造方法 |
| KR20070071965A (ko) * | 2005-12-30 | 2007-07-04 | 삼성전자주식회사 | 실리콘 직접 접합 방법 |
| US8269341B2 (en) * | 2008-11-21 | 2012-09-18 | Infineon Technologies Ag | Cooling structures and methods |
| CN108682623B (zh) * | 2011-01-25 | 2022-09-27 | Ev 集团 E·索尔纳有限责任公司 | 用于永久接合晶片的方法 |
-
2013
- 2013-01-22 FR FR1350568A patent/FR3001225B1/fr not_active Expired - Fee Related
-
2014
- 2014-01-22 WO PCT/FR2014/050116 patent/WO2014114876A1/fr not_active Ceased
- 2014-01-22 JP JP2015553150A patent/JP2016509372A/ja active Pending
- 2014-01-22 EP EP14704610.6A patent/EP2948976A1/fr not_active Withdrawn
- 2014-01-22 US US14/758,740 patent/US10103052B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR3001225A1 (fr) | 2014-07-25 |
| US20150340278A1 (en) | 2015-11-26 |
| US10103052B2 (en) | 2018-10-16 |
| WO2014114876A1 (fr) | 2014-07-31 |
| JP2016509372A (ja) | 2016-03-24 |
| EP2948976A1 (fr) | 2015-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 3 |
|
| RM | Correction of a material error |
Effective date: 20150212 |
|
| PLFP | Fee payment |
Year of fee payment: 4 |
|
| PLFP | Fee payment |
Year of fee payment: 5 |
|
| PLFP | Fee payment |
Year of fee payment: 6 |
|
| PLFP | Fee payment |
Year of fee payment: 8 |
|
| PLFP | Fee payment |
Year of fee payment: 9 |
|
| ST | Notification of lapse |
Effective date: 20220905 |