[go: up one dir, main page]

FR3048425B1 - Structure pour dispositif avec microsystemes electromecaniques integres - Google Patents

Structure pour dispositif avec microsystemes electromecaniques integres Download PDF

Info

Publication number
FR3048425B1
FR3048425B1 FR1651874A FR1651874A FR3048425B1 FR 3048425 B1 FR3048425 B1 FR 3048425B1 FR 1651874 A FR1651874 A FR 1651874A FR 1651874 A FR1651874 A FR 1651874A FR 3048425 B1 FR3048425 B1 FR 3048425B1
Authority
FR
France
Prior art keywords
layer
face
substrate
useful
donor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1651874A
Other languages
English (en)
Other versions
FR3048425A1 (fr
Inventor
Bruno Ghyselen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1651874A priority Critical patent/FR3048425B1/fr
Priority to EP17159250.4A priority patent/EP3216754B1/fr
Priority to TW106107028A priority patent/TWI699329B/zh
Priority to US15/449,649 priority patent/US10343902B2/en
Priority to CN201710256317.5A priority patent/CN107161944B/zh
Priority to KR1020170028919A priority patent/KR102265047B1/ko
Publication of FR3048425A1 publication Critical patent/FR3048425A1/fr
Application granted granted Critical
Publication of FR3048425B1 publication Critical patent/FR3048425B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0025—Protection against chemical alteration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/056—Releasing structures at the end of the manufacturing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une structure comprenant la fourniture d'un substrat donneur comportant une face avant et une face arrière et d'un substrat support (20), ledit substrat donneur comprenant une couche d'arrêt (2) enterrée et une couche active fine (3) présentant une première épaisseur inférieure à l'épaisseur utile, entre la face avant du substrat donneur et la couche d'arrêt, la formation d'une couche intermédiaire (30) sur la face avant du substrat donneur ou sur le substrat support, l'assemblage desdits substrats pour disposer la couche intermédiaire entre eux, l'amincissement de la face arrière du substrat donneur pour former une couche utile (100) d'une épaisseur utile présentant une première face disposée sur la couche intermédiaire et une seconde face (12') libre, le retrait dans des premières zones (110) de la structure d'une couche active épaisse (4) délimitée par la seconde face libre de la couche utile et la couche d'arrêt.
FR1651874A 2016-03-07 2016-03-07 Structure pour dispositif avec microsystemes electromecaniques integres Active FR3048425B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1651874A FR3048425B1 (fr) 2016-03-07 2016-03-07 Structure pour dispositif avec microsystemes electromecaniques integres
EP17159250.4A EP3216754B1 (fr) 2016-03-07 2017-03-03 Procédé de fabrication d'un dispositif mems ayant des pièces mobiles d'épaisseurs différentes
TW106107028A TWI699329B (zh) 2016-03-07 2017-03-03 用於具微機電系統元件之結構
US15/449,649 US10343902B2 (en) 2016-03-07 2017-03-03 Structure for device with integrated microelectromechanical systems
CN201710256317.5A CN107161944B (zh) 2016-03-07 2017-03-07 用于制备结构的方法
KR1020170028919A KR102265047B1 (ko) 2016-03-07 2017-03-07 집적형 마이크로 전자기계 시스템을 가진 장치를 위한 구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1651874A FR3048425B1 (fr) 2016-03-07 2016-03-07 Structure pour dispositif avec microsystemes electromecaniques integres

Publications (2)

Publication Number Publication Date
FR3048425A1 FR3048425A1 (fr) 2017-09-08
FR3048425B1 true FR3048425B1 (fr) 2021-02-12

Family

ID=55953262

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1651874A Active FR3048425B1 (fr) 2016-03-07 2016-03-07 Structure pour dispositif avec microsystemes electromecaniques integres

Country Status (6)

Country Link
US (1) US10343902B2 (fr)
EP (1) EP3216754B1 (fr)
KR (1) KR102265047B1 (fr)
CN (1) CN107161944B (fr)
FR (1) FR3048425B1 (fr)
TW (1) TWI699329B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110729310A (zh) * 2019-10-28 2020-01-24 沈阳硅基科技有限公司 Soi和soi的制造方法
FR3108439B1 (fr) * 2020-03-23 2022-02-11 Soitec Silicon On Insulator Procede de fabrication d’une structure empilee
FI130884B1 (fi) * 2021-07-06 2024-05-08 Teknologian Tutkimuskeskus Vtt Oy Liitosrakenne
US20240190694A1 (en) * 2022-12-12 2024-06-13 Lawrence Semiconductor Research Laboratory, Inc. Engineered substrates, free-standing semiconductor microstructures, and related systems and methods

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666757B2 (ja) 1995-01-09 1997-10-22 日本電気株式会社 Ｓｏｉ基板の製造方法
US6756672B1 (en) * 2001-02-06 2004-06-29 Advanced Micro Devices, Inc. Use of sic for preventing copper contamination of low-k dielectric layers
US20030197176A1 (en) * 2002-04-22 2003-10-23 Glimmerglass Networks, Inc. Silicon on insulator standoff and method for manufacture thereof
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
EP1966822A1 (fr) 2005-12-22 2008-09-10 Nxp B.V. Procede de fabrication d'un dispositif semi-conducteur
JP2008004821A (ja) * 2006-06-23 2008-01-10 Sumco Corp 貼り合わせウェーハの製造方法
US8196475B2 (en) * 2009-03-16 2012-06-12 Kavlico Corporation Cointegrated MEMS sensor and method
US8511171B2 (en) * 2011-05-23 2013-08-20 General Electric Company Device for measuring environmental forces and method of fabricating the same
FR2983189B1 (fr) * 2011-11-30 2014-02-07 Commissariat Energie Atomique Procede de realisation d'une structure comportant au moins une partie active presentant des zones d'epaisseurs differentes
FR2983188B1 (fr) 2011-11-30 2016-07-01 Commissariat Energie Atomique Procede de realisation d'une structure comportant au moins une partie active multiepaisseur
DE102012208053B4 (de) * 2012-05-14 2024-07-11 Robert Bosch Gmbh Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung
FR3021965B1 (fr) * 2014-06-05 2016-07-29 Commissariat Energie Atomique Procede de realisation ameliore d'elements suspendus d'epaisseurs differentes pour structure mems et nems

Also Published As

Publication number Publication date
CN107161944A (zh) 2017-09-15
TW201800326A (zh) 2018-01-01
CN107161944B (zh) 2021-11-09
US10343902B2 (en) 2019-07-09
US20170253478A1 (en) 2017-09-07
KR20170104404A (ko) 2017-09-15
FR3048425A1 (fr) 2017-09-08
EP3216754B1 (fr) 2018-12-26
EP3216754A1 (fr) 2017-09-13
KR102265047B1 (ko) 2021-06-16
TWI699329B (zh) 2020-07-21

Similar Documents

Publication Publication Date Title
FR3048425B1 (fr) Structure pour dispositif avec microsystemes electromecaniques integres
TW200731417A (en) Structure and method for forming asymmetrical overlap capacitance in field effect transistors
TW200712631A (en) Liquid crystal display device, method for manufacturing the same, and spacer structure of display device
JP2008270771A5 (fr)
TW200638092A (en) Liquid crystal display device and method for fabricating the same
CN202141876U (zh) 一种薄膜晶体管阵列基板与液晶显示面板及液晶显示器
ATE512269T1 (de) Erdbebenisolator mit schiebependel
TW200943477A (en) Method for manufacturing SOI substrate
FR2810448B1 (fr) Procede de fabrication de substrats et substrats obtenus par ce procede
EP2172981A3 (fr) Cellule photovoltaïque a hétérojonction à deux dopages et procédé de fabrication.
WO2013161209A3 (fr) Dispositif d'affichage à cristaux liquides
TW200735258A (en) Thin slice electrode of electrostatic sucking disc
WO2006015246A3 (fr) Procede et systeme de fabrication de couches contraintes pour la production de circuits integres
WO2012017978A3 (fr) Transducteur électromécanique et son procédé de production
FR2883663B1 (fr) Procede de fabrication d'une cellule photovoltaique a base de silicium en couche mince.
FR2924273B1 (fr) Procede de moderation de deformation
FR3019173B1 (fr) Vitrage muni d'un empilement de couches minces pour la protection solaire
GB2497854B (en) V-groove source/drain mosfet and process for fabricating same
TW200614420A (en) Semiconductor structure and semiconductor process
FR3051973B1 (fr) Procede de formation de transistors pdsoi et fdsoi sur un meme substrat
FR3080486B1 (fr) Procede de formation d'un dispositif microelectronique
FR3099637B1 (fr) procédé de fabrication d’unE structure composite comprenant une couche mince en Sic monocristallin sur un substrat support en sic polycristallin
RU2014138379A (ru) Термоэлектрический элемент
TW200712711A (en) Liquid crystal display and manufacturing method thereof
GB201122081D0 (en) Source and drain regions, contact holes and fabrication methods thereof

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20170908

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10