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FR2910711B1 - Heterojonction a interface intrinsequement amorphe - Google Patents

Heterojonction a interface intrinsequement amorphe

Info

Publication number
FR2910711B1
FR2910711B1 FR0655711A FR0655711A FR2910711B1 FR 2910711 B1 FR2910711 B1 FR 2910711B1 FR 0655711 A FR0655711 A FR 0655711A FR 0655711 A FR0655711 A FR 0655711A FR 2910711 B1 FR2910711 B1 FR 2910711B1
Authority
FR
France
Prior art keywords
intrinseally
heterojunction
amorphous interface
amorphous
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0655711A
Other languages
English (en)
Other versions
FR2910711A1 (fr
Inventor
I Cabarrocas Pere Roca
Lacoste Jerome Damon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ECOLE POLYTECH
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Original Assignee
ECOLE POLYTECH
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ECOLE POLYTECH, Centre National de la Recherche Scientifique CNRS, Ecole Polytechnique filed Critical ECOLE POLYTECH
Priority to FR0655711A priority Critical patent/FR2910711B1/fr
Priority to JP2009542077A priority patent/JP5567345B2/ja
Priority to EP07857992A priority patent/EP2126980A2/fr
Priority to PCT/EP2007/064373 priority patent/WO2008074875A2/fr
Priority to US12/520,309 priority patent/US20090308453A1/en
Publication of FR2910711A1 publication Critical patent/FR2910711A1/fr
Application granted granted Critical
Publication of FR2910711B1 publication Critical patent/FR2910711B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
FR0655711A 2006-12-20 2006-12-20 Heterojonction a interface intrinsequement amorphe Expired - Fee Related FR2910711B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0655711A FR2910711B1 (fr) 2006-12-20 2006-12-20 Heterojonction a interface intrinsequement amorphe
JP2009542077A JP5567345B2 (ja) 2006-12-20 2007-12-20 真性アモルファス界面を有するヘテロ接合
EP07857992A EP2126980A2 (fr) 2006-12-20 2007-12-20 Heterojonction a interface intrinsequement amorphe
PCT/EP2007/064373 WO2008074875A2 (fr) 2006-12-20 2007-12-20 Heterojonction a interface intrinsequement amorphe
US12/520,309 US20090308453A1 (en) 2006-12-20 2007-12-20 Heterojunction with intrinsically amorphous interface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0655711A FR2910711B1 (fr) 2006-12-20 2006-12-20 Heterojonction a interface intrinsequement amorphe

Publications (2)

Publication Number Publication Date
FR2910711A1 FR2910711A1 (fr) 2008-06-27
FR2910711B1 true FR2910711B1 (fr) 2018-06-29

Family

ID=38370973

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0655711A Expired - Fee Related FR2910711B1 (fr) 2006-12-20 2006-12-20 Heterojonction a interface intrinsequement amorphe

Country Status (5)

Country Link
US (1) US20090308453A1 (fr)
EP (1) EP2126980A2 (fr)
JP (1) JP5567345B2 (fr)
FR (1) FR2910711B1 (fr)
WO (1) WO2008074875A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100109B1 (ko) * 2009-06-12 2011-12-29 한국철강 주식회사 광기전력 장치의 제조 방법
KR101106480B1 (ko) * 2009-06-12 2012-01-20 한국철강 주식회사 광기전력 장치의 제조 방법
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
JP5484950B2 (ja) * 2010-02-23 2014-05-07 三洋電機株式会社 太陽電池
CN101866969B (zh) * 2010-05-27 2012-09-19 友达光电股份有限公司 太阳电池
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
WO2013073045A1 (fr) * 2011-11-18 2013-05-23 三洋電機株式会社 Cellule solaire et procédé de production pour cellule solaire
FR3007200B1 (fr) * 2013-06-17 2015-07-10 Commissariat Energie Atomique Cellule solaire a heterojonction de silicium
WO2021119092A1 (fr) * 2019-12-09 2021-06-17 Pacific Integrated Energy, Inc. Cellule solaire en silicium cristallin à couches minces utilisant une structure de rétro-réflecteur plasmonique-photonique nano-imprimée

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2614561B2 (ja) * 1991-10-08 1997-05-28 三洋電機株式会社 光起電力素子
JP3223102B2 (ja) * 1995-06-05 2001-10-29 シャープ株式会社 太陽電池セルおよびその製造方法
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
US5719076A (en) * 1996-04-24 1998-02-17 United Solar Systems Corporation Method for the manufacture of semiconductor devices with optimized hydrogen content
US6180870B1 (en) * 1996-08-28 2001-01-30 Canon Kabushiki Kaisha Photovoltaic device
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JP4036616B2 (ja) * 2000-01-31 2008-01-23 三洋電機株式会社 太陽電池モジュール
EP1643564B1 (fr) * 2004-09-29 2019-01-16 Panasonic Intellectual Property Management Co., Ltd. Dispositif photovoltaique
JP2006128630A (ja) * 2004-09-29 2006-05-18 Sanyo Electric Co Ltd 光起電力装置
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices

Also Published As

Publication number Publication date
WO2008074875A3 (fr) 2008-08-14
WO2008074875A2 (fr) 2008-06-26
US20090308453A1 (en) 2009-12-17
JP2010514183A (ja) 2010-04-30
EP2126980A2 (fr) 2009-12-02
FR2910711A1 (fr) 2008-06-27
JP5567345B2 (ja) 2014-08-06

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