[go: up one dir, main page]

FR2981195B1 - Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot - Google Patents

Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot Download PDF

Info

Publication number
FR2981195B1
FR2981195B1 FR1159154A FR1159154A FR2981195B1 FR 2981195 B1 FR2981195 B1 FR 2981195B1 FR 1159154 A FR1159154 A FR 1159154A FR 1159154 A FR1159154 A FR 1159154A FR 2981195 B1 FR2981195 B1 FR 2981195B1
Authority
FR
France
Prior art keywords
semiconductor device
junctions
device formed
deposition techniques
different deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1159154A
Other languages
English (en)
Other versions
FR2981195A1 (fr
Inventor
Rainer Krause
Bruno Ghyselen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1159154A priority Critical patent/FR2981195B1/fr
Priority to TW101131382A priority patent/TWI611464B/zh
Priority to KR1020147009324A priority patent/KR20140074338A/ko
Priority to US14/350,435 priority patent/US10490688B2/en
Priority to DE112012004230.1T priority patent/DE112012004230T5/de
Priority to SG11201400569UA priority patent/SG11201400569UA/en
Priority to CN201280048760.9A priority patent/CN103843157B/zh
Priority to PCT/IB2012/002062 priority patent/WO2013054184A1/fr
Publication of FR2981195A1 publication Critical patent/FR2981195A1/fr
Application granted granted Critical
Publication of FR2981195B1 publication Critical patent/FR2981195B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10P14/22—
    • H10P14/24—
    • H10P14/3414—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)

Abstract

Un dispositif semi-conducteur, en particulier une cellule solaire (450), est formé sur la base d'une stratégie hybride de dépôt utilisant le MOCVD et la MBE dans le but de fournir des semi-conducteurs composés adaptés en réseau (452, 453, 454). Pour ce faire, la MBE peut être appliquée pour fournir un semi-conducteur composé contenant de l'azote (453) qui permet une énergie de bande interdite désirée et une configuration adaptée en réseau par rapport à des substrats d'arséniure de gallium.
FR1159154A 2011-10-11 2011-10-11 Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot Active FR2981195B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1159154A FR2981195B1 (fr) 2011-10-11 2011-10-11 Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot
TW101131382A TWI611464B (zh) 2011-10-11 2012-08-29 半導體元件中應用不同沉積技術所形成之多重接面
US14/350,435 US10490688B2 (en) 2011-10-11 2012-10-08 Multi junctions in a semiconductor device formed by different deposition techniques
DE112012004230.1T DE112012004230T5 (de) 2011-10-11 2012-10-08 Mehrfachübergänge in einer Halbleitervorrichtung, die durch unterschiedliche Abscheidungstechniken ausgebildet ist
KR1020147009324A KR20140074338A (ko) 2011-10-11 2012-10-08 상이한 퇴적 기술들에 의해 형성된 반도체 소자에서의 다중 접합들
SG11201400569UA SG11201400569UA (en) 2011-10-11 2012-10-08 Multi junctions in a semiconductor device formed by different deposition techniques
CN201280048760.9A CN103843157B (zh) 2011-10-11 2012-10-08 通过不同的沉积技术形成的半导体器件中的多结
PCT/IB2012/002062 WO2013054184A1 (fr) 2011-10-11 2012-10-08 Jonctions multiples dans un dispositif à semi-conducteurs formé par différentes techniques de dépôt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1159154A FR2981195B1 (fr) 2011-10-11 2011-10-11 Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot

Publications (2)

Publication Number Publication Date
FR2981195A1 FR2981195A1 (fr) 2013-04-12
FR2981195B1 true FR2981195B1 (fr) 2024-08-23

Family

ID=47080742

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1159154A Active FR2981195B1 (fr) 2011-10-11 2011-10-11 Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot

Country Status (8)

Country Link
US (1) US10490688B2 (fr)
KR (1) KR20140074338A (fr)
CN (1) CN103843157B (fr)
DE (1) DE112012004230T5 (fr)
FR (1) FR2981195B1 (fr)
SG (1) SG11201400569UA (fr)
TW (1) TWI611464B (fr)
WO (1) WO2013054184A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150221803A1 (en) 2014-02-05 2015-08-06 Solar Junction Corporation Monolithic multijunction power converter
CN102751389A (zh) * 2012-07-19 2012-10-24 厦门市三安光电科技有限公司 一种高效多结太阳能电池的制备方法
CN104659158A (zh) * 2015-03-16 2015-05-27 天津三安光电有限公司 倒装多结太阳能电池及其制作方法
WO2019010037A1 (fr) * 2017-07-06 2019-01-10 Solar Junction Corporation Croissance épitaxiale par mocvd/mbe hybride de cellules solaires à jonctions multiples adaptées au réseau à haut rendement
WO2019067553A1 (fr) 2017-09-27 2019-04-04 Solar Junction Corporation Dispositifs optoélectroniques à infrarouge à courte longueur d'onde comportant une couche de nitrure dilué
US10586884B2 (en) * 2018-06-18 2020-03-10 Alta Devices, Inc. Thin-film, flexible multi-junction optoelectronic devices incorporating lattice-matched dilute nitride junctions and methods of fabrication
US11211514B2 (en) 2019-03-11 2021-12-28 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404421A (en) 1982-02-26 1983-09-13 Chevron Research Company Ternary III-V multicolor solar cells and process of fabrication
US4686323A (en) 1986-06-30 1987-08-11 The Standard Oil Company Multiple cell, two terminal photovoltaic device employing conductively adhered cells
JPH0656865B2 (ja) 1988-10-13 1994-07-27 株式会社東芝 高耐圧素子用接着基板
FR2690279B1 (fr) 1992-04-15 1997-10-03 Picogiga Sa Composant photovoltauique multispectral.
FR2690278A1 (fr) 1992-04-15 1993-10-22 Picogiga Sa Composant photovoltaïque multispectral à empilement de cellules, et procédé de réalisation.
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
US5689123A (en) 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5853497A (en) 1996-12-12 1998-12-29 Hughes Electronics Corporation High efficiency multi-junction solar cells
US6281426B1 (en) 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
FR2777116A1 (fr) * 1998-04-03 1999-10-01 Picogiga Sa Structure a semiconducteurs de composant photovoltaique
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
US6465809B1 (en) 1999-06-09 2002-10-15 Kabushiki Kaisha Toshiba Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
US6316715B1 (en) * 2000-03-15 2001-11-13 The Boeing Company Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
US7339109B2 (en) 2000-06-20 2008-03-04 Emcore Corporation Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells
WO2002043155A2 (fr) 2000-11-27 2002-05-30 Kopin Corporation Transistor bipolaire comprenant une couche de base adaptee au reseau
US6815736B2 (en) 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
CA2482258A1 (fr) 2001-04-17 2002-10-24 California Institute Of Technology Procede utilisant un transfert de la couche au germanium au si pour applications photovoltaiques, et heterostructures realisees par ce procede
US7238622B2 (en) 2001-04-17 2007-07-03 California Institute Of Technology Wafer bonded virtual substrate and method for forming the same
US20050026432A1 (en) 2001-04-17 2005-02-03 Atwater Harry A. Wafer bonded epitaxial templates for silicon heterostructures
AU2003297649A1 (en) 2002-12-05 2004-06-30 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US20050161078A1 (en) 2004-01-27 2005-07-28 Daniel Aiken Solar cell mechanical interconnection using direct wafer bonding
US20080211061A1 (en) 2004-04-21 2008-09-04 California Institute Of Technology Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates
US7807921B2 (en) 2004-06-15 2010-10-05 The Boeing Company Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer
WO2006015185A2 (fr) 2004-07-30 2006-02-09 Aonex Technologies, Inc. Cellule solaire a triple jonction gainp/gaas/si obtenue par liaison de tranches et transfert de couches
US7846759B2 (en) 2004-10-21 2010-12-07 Aonex Technologies, Inc. Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
US10374120B2 (en) 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US20080311686A1 (en) 2005-08-03 2008-12-18 California Institute Of Technology Method of Forming Semiconductor Layers on Handle Substrates
US11211510B2 (en) 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
JP5576273B2 (ja) 2007-07-03 2014-08-20 マイクロリンク デバイセズ インコーポレイテッド Ｉｉｉ−ｖ化合物薄膜太陽電池の加工方法
WO2009009111A2 (fr) * 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University Piles solaires gainnassb développées par épitaxie de faisceau moléculaire
EP2151861A1 (fr) 2008-08-06 2010-02-10 S.O.I. TEC Silicon Passivation de structures semiconductrices gravées
US8101856B2 (en) 2008-10-02 2012-01-24 International Business Machines Corporation Quantum well GaP/Si tandem photovoltaic cells
US8916769B2 (en) 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
KR100982993B1 (ko) 2008-10-14 2010-09-17 삼성엘이디 주식회사 Ⅲ족 질화물 반도체의 표면 처리 방법, ⅲ족 질화물 반도체및 그의 제조 방법 및 ⅲ족 질화물 반도체 구조물
US8236600B2 (en) 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US20100122764A1 (en) 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells
WO2010062991A1 (fr) 2008-11-26 2010-06-03 Microlink Devices, Inc. Pile solaire dotée d'un orifice de surface inférieure permettant de s'engager avec la couche émettrice
US7785989B2 (en) 2008-12-17 2010-08-31 Emcore Solar Power, Inc. Growth substrates for inverted metamorphic multijunction solar cells
CA2750656C (fr) 2009-01-28 2016-08-23 Microlink Devices, Inc. Cellule solaire a semi-conducteur compose du groupe iii-v a haut rendement pourvue de couche de fenetre oxydee
IT1394853B1 (it) * 2009-07-21 2012-07-20 Cesi Ct Elettrotecnico Sperimentale Italiano Giacinto Motta S P A Cella fotovoltaica ad elevata efficienza di conversione
US8119904B2 (en) 2009-07-31 2012-02-21 International Business Machines Corporation Silicon wafer based structure for heterostructure solar cells
US8895838B1 (en) * 2010-01-08 2014-11-25 Magnolia Solar, Inc. Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
US9303316B1 (en) * 2010-01-15 2016-04-05 Apollo Precision Kunming Yuanhong Limited Continuous web apparatus and method using an air to vacuum seal and accumulator
US20110232730A1 (en) * 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US20110303268A1 (en) * 2010-06-15 2011-12-15 Tan Wei-Sin HIGH EFFICIENCY InGaAsN SOLAR CELL AND METHOD OF MAKING
CN101950774A (zh) 2010-08-17 2011-01-19 中国科学院苏州纳米技术与纳米仿生研究所 四结GaInP/GaAs/InGaAsP/InGaAs太阳电池的制作方法
US10170652B2 (en) * 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
CN102184980B (zh) 2011-04-02 2013-10-30 中国科学院苏州纳米技术与纳米仿生研究所 基于晶片键合的三结太阳能电池及其制备方法
US9818901B2 (en) 2011-05-13 2017-11-14 International Business Machines Corporation Wafer bonded solar cells and fabrication methods

Also Published As

Publication number Publication date
DE112012004230T5 (de) 2014-06-26
KR20140074338A (ko) 2014-06-17
CN103843157B (zh) 2017-10-27
TW201316382A (zh) 2013-04-16
TWI611464B (zh) 2018-01-11
FR2981195A1 (fr) 2013-04-12
WO2013054184A1 (fr) 2013-04-18
CN103843157A (zh) 2014-06-04
US10490688B2 (en) 2019-11-26
US20140261653A1 (en) 2014-09-18
SG11201400569UA (en) 2014-05-29

Similar Documents

Publication Publication Date Title
FR2981195B1 (fr) Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot
EA201890168A1 (ru) Нанопроволока или нанопирамидки, выращенные на графитовой подложке
CN105914139B (zh) 一种石墨烯上自组织成核外延GaN材料的方法
Simon et al. Low-cost III–V solar cells grown by hydride vapor-phase epitaxy
MY167874A (en) Solar cells
TW200943561A (en) Group III-nitride solar cell with graded compositions
Abdelfatah et al. Low cost inorganic white light emitting diode based on submicron ZnO rod arrays and electrodeposited Cu2O thin film
Chu et al. On the impact of electron leakage on the efficiency droop for AlGaN based deep ultraviolet light emitting diodes
CN101694842B (zh) 一种功率型AlGaN/GaN肖特基二极管及其制作方法
CN102851734B (zh) 半导体外延结构及其生长方法
Liu et al. Nitride-based concentrator solar cells grown on Si substrates
GB2511245A (en) Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
CN103258926A (zh) 一种led垂直芯片结构及制作方法
Jam et al. Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse
CN101299449A (zh) 一种GaN基LED外延片及其制备方法
CN103165434A (zh) 一种利用H2腐蚀和SiNx掩埋提高AlGaN材料质量的方法
Suihkonen et al. The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
Wang et al. Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate
Li et al. Structural and optical properties of position-controlled n-ZnO nanowire arrays: Potential applications in optoelectronics
CN103972311B (zh) 一种氧化锌基p型材料的制备方法
Kusakabe et al. Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy
Wang et al. Polarization induced self-doping effects and pn junctions in heterostructures based on F-GaN-H stacking
CN207517720U (zh) 一种GaN外延片
Jung et al. Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2/p-InGaN diode
US11482635B2 (en) InGaN solar photovoltaic device with flexible multi-layer structure and method for manufacturing the same

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLSC Publication of the preliminary search report

Effective date: 20240308

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15