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FR2895571B1 - Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire - Google Patents

Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire

Info

Publication number
FR2895571B1
FR2895571B1 FR0554117A FR0554117A FR2895571B1 FR 2895571 B1 FR2895571 B1 FR 2895571B1 FR 0554117 A FR0554117 A FR 0554117A FR 0554117 A FR0554117 A FR 0554117A FR 2895571 B1 FR2895571 B1 FR 2895571B1
Authority
FR
France
Prior art keywords
electroluminescent
junction
producing
semiconductor material
molecular bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0554117A
Other languages
English (en)
Other versions
FR2895571A1 (fr
Inventor
Pierre Noe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0554117A priority Critical patent/FR2895571B1/fr
Priority to PCT/EP2006/070209 priority patent/WO2007074152A1/fr
Priority to US12/158,050 priority patent/US20080315213A1/en
Priority to EP06841620A priority patent/EP1966818A1/fr
Priority to JP2008547955A priority patent/JP2009522759A/ja
Publication of FR2895571A1 publication Critical patent/FR2895571A1/fr
Application granted granted Critical
Publication of FR2895571B1 publication Critical patent/FR2895571B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
FR0554117A 2005-12-28 2005-12-28 Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire Expired - Fee Related FR2895571B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0554117A FR2895571B1 (fr) 2005-12-28 2005-12-28 Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire
PCT/EP2006/070209 WO2007074152A1 (fr) 2005-12-28 2006-12-26 Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire
US12/158,050 US20080315213A1 (en) 2005-12-28 2006-12-26 Process for Producing an Electroluminescent P-N Junction Made of a Semiconductor Material by Molecular Bonding
EP06841620A EP1966818A1 (fr) 2005-12-28 2006-12-26 Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire
JP2008547955A JP2009522759A (ja) 2005-12-28 2006-12-26 分子結合によって半導体材料でできたエレクトロルミネセントｐ−ｎ接合を作製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0554117A FR2895571B1 (fr) 2005-12-28 2005-12-28 Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire

Publications (2)

Publication Number Publication Date
FR2895571A1 FR2895571A1 (fr) 2007-06-29
FR2895571B1 true FR2895571B1 (fr) 2008-04-18

Family

ID=37038308

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0554117A Expired - Fee Related FR2895571B1 (fr) 2005-12-28 2005-12-28 Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire

Country Status (5)

Country Link
US (1) US20080315213A1 (fr)
EP (1) EP1966818A1 (fr)
JP (1) JP2009522759A (fr)
FR (1) FR2895571B1 (fr)
WO (1) WO2007074152A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7749875B2 (en) * 2007-02-16 2010-07-06 Infineon Technologies Ag Method of manufacturing a semiconductor element and semiconductor element
FR3040108B1 (fr) * 2015-08-12 2017-08-11 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse
CN107180756B (zh) 2016-03-11 2020-05-05 胜高股份有限公司 pn接合硅晶片的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02183510A (ja) * 1989-01-10 1990-07-18 Sony Corp 半導体用基板の製法
TW289837B (fr) * 1994-01-18 1996-11-01 Hwelett Packard Co
JPH07263721A (ja) * 1994-03-25 1995-10-13 Nippondenso Co Ltd 半導体装置及びその製造方法
JPH0964476A (ja) * 1995-08-25 1997-03-07 Fujitsu Ltd ３次元量子閉じ込めを利用した半導体装置の製造方法
FR2766620B1 (fr) * 1997-07-22 2000-12-01 Commissariat Energie Atomique Realisation de microstructures ou de nanostructures sur un support
FR2819099B1 (fr) * 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
JP3879604B2 (ja) * 2002-07-02 2007-02-14 松下電器産業株式会社 半導体多層基板および半導体多層膜の製造方法

Also Published As

Publication number Publication date
FR2895571A1 (fr) 2007-06-29
JP2009522759A (ja) 2009-06-11
US20080315213A1 (en) 2008-12-25
EP1966818A1 (fr) 2008-09-10
WO2007074152A1 (fr) 2007-07-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20120831