[go: up one dir, main page]

FR2880185B1 - Procede de traitement d'une surface de plaquette - Google Patents

Procede de traitement d'une surface de plaquette

Info

Publication number
FR2880185B1
FR2880185B1 FR0413922A FR0413922A FR2880185B1 FR 2880185 B1 FR2880185 B1 FR 2880185B1 FR 0413922 A FR0413922 A FR 0413922A FR 0413922 A FR0413922 A FR 0413922A FR 2880185 B1 FR2880185 B1 FR 2880185B1
Authority
FR
France
Prior art keywords
processing
wafer surface
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0413922A
Other languages
English (en)
Other versions
FR2880185A1 (fr
Inventor
Cecile Delattre
Frederic Metral
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0413922A priority Critical patent/FR2880185B1/fr
Priority to US11/145,455 priority patent/US7919391B2/en
Priority to KR1020077014457A priority patent/KR100884672B1/ko
Priority to PCT/EP2005/057003 priority patent/WO2006069945A1/fr
Priority to EP05823924A priority patent/EP1829099A1/fr
Priority to JP2007547504A priority patent/JP2008526006A/ja
Priority to TW094145970A priority patent/TWI333258B/zh
Publication of FR2880185A1 publication Critical patent/FR2880185A1/fr
Application granted granted Critical
Publication of FR2880185B1 publication Critical patent/FR2880185B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P90/1914—
    • H10P90/1916—
    • H10W10/181—
FR0413922A 2004-12-24 2004-12-24 Procede de traitement d'une surface de plaquette Expired - Fee Related FR2880185B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0413922A FR2880185B1 (fr) 2004-12-24 2004-12-24 Procede de traitement d'une surface de plaquette
US11/145,455 US7919391B2 (en) 2004-12-24 2005-06-02 Methods for preparing a bonding surface of a semiconductor wafer
PCT/EP2005/057003 WO2006069945A1 (fr) 2004-12-24 2005-12-21 Procédé de traitement d'une surface de plaquette
EP05823924A EP1829099A1 (fr) 2004-12-24 2005-12-21 Procede de traitement d'une surface de plaquette
KR1020077014457A KR100884672B1 (ko) 2004-12-24 2005-12-21 웨이퍼 표면 처리 방법
JP2007547504A JP2008526006A (ja) 2004-12-24 2005-12-21 ウェーハ表面の処理方法
TW094145970A TWI333258B (en) 2004-12-24 2005-12-23 A method of treating a wafer surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0413922A FR2880185B1 (fr) 2004-12-24 2004-12-24 Procede de traitement d'une surface de plaquette

Publications (2)

Publication Number Publication Date
FR2880185A1 FR2880185A1 (fr) 2006-06-30
FR2880185B1 true FR2880185B1 (fr) 2007-07-20

Family

ID=34953367

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0413922A Expired - Fee Related FR2880185B1 (fr) 2004-12-24 2004-12-24 Procede de traitement d'une surface de plaquette

Country Status (1)

Country Link
FR (1) FR2880185B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3187109B2 (ja) * 1992-01-31 2001-07-11 キヤノン株式会社 半導体部材およびその製造方法
JPH07183288A (ja) * 1993-12-24 1995-07-21 Toshiba Corp 半導体ウェーハ処理剤
US5916819A (en) * 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US7235461B2 (en) * 2003-04-29 2007-06-26 S.O.I.Tec Silicon On Insulator Technologies Method for bonding semiconductor structures together

Also Published As

Publication number Publication date
FR2880185A1 (fr) 2006-06-30

Similar Documents

Publication Publication Date Title
EP1865460A4 (fr) Procede de traitement d'image
EP1949616A4 (fr) Procede de traitement d'un message
FR2863771B1 (fr) Procede de traitement d'une tranche multicouche presentant un differentiel de caracteristiques thermiques
EP1986217A4 (fr) Procede de fabrication d'un substrat semi-conducteur
EP1643545A4 (fr) Procede de traitement de plaquettes de silicium
EP1868953A4 (fr) Composition et procede de polissage d'une surface de saphir
EP1683605A4 (fr) Procede d'usinage de piece
EP1535313A4 (fr) Appareil pour traitement de substrats
EP1840950A4 (fr) Procede de traitement au plasma
EP1987110A4 (fr) Procédé de traitement d'un substrat
EP2322299A4 (fr) Procede de traitement d'elargissement pour piece a travailler
EP1840830A4 (fr) Procede de traitement d'image
EP1811548A4 (fr) Procede de fabrication de tranches semiconductrices
EP1724238A4 (fr) Procede pour enlever le bore du silicium
EP1833264A4 (fr) Procede de traitement d'image
EP1742970A4 (fr) Procede de traitement de l'amidon
FR2892409B1 (fr) Procede de traitement d'un substrat
FR2843061B1 (fr) Procede de polissage de tranche de materiau
EP1868137A4 (fr) Procede de traitement d'image de code
EP1693887A4 (fr) Procede de traitement de plaquette au silicium
EP1539200A4 (fr) Procede de traitement de la sclerose multiple
FR2865420B1 (fr) Procede de nettoyage d'un substrat
EP1954836A4 (fr) Compose destine a l'immunodepression et procede de traitement
FR2911995B1 (fr) Procede d'interconnexion de tranches electroniques
EP1988060A4 (fr) Procede de traitement d'eau usagee

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

ST Notification of lapse

Effective date: 20130830