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FR2860099B1 - Procede de realisation d'un transistor a effet de champ et transistor ainsi obtenu - Google Patents

Procede de realisation d'un transistor a effet de champ et transistor ainsi obtenu

Info

Publication number
FR2860099B1
FR2860099B1 FR0310984A FR0310984A FR2860099B1 FR 2860099 B1 FR2860099 B1 FR 2860099B1 FR 0310984 A FR0310984 A FR 0310984A FR 0310984 A FR0310984 A FR 0310984A FR 2860099 B1 FR2860099 B1 FR 2860099B1
Authority
FR
France
Prior art keywords
transistor
producing
field effect
effect transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0310984A
Other languages
English (en)
Other versions
FR2860099A1 (fr
Inventor
Thomas Skotnicki
Philippe Coronel
Joel Hartmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0310984A priority Critical patent/FR2860099B1/fr
Priority to US10/943,242 priority patent/US7297578B2/en
Publication of FR2860099A1 publication Critical patent/FR2860099A1/fr
Application granted granted Critical
Publication of FR2860099B1 publication Critical patent/FR2860099B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
FR0310984A 2003-09-18 2003-09-18 Procede de realisation d'un transistor a effet de champ et transistor ainsi obtenu Expired - Fee Related FR2860099B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0310984A FR2860099B1 (fr) 2003-09-18 2003-09-18 Procede de realisation d'un transistor a effet de champ et transistor ainsi obtenu
US10/943,242 US7297578B2 (en) 2003-09-18 2004-09-16 Method for producing a field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0310984A FR2860099B1 (fr) 2003-09-18 2003-09-18 Procede de realisation d'un transistor a effet de champ et transistor ainsi obtenu

Publications (2)

Publication Number Publication Date
FR2860099A1 FR2860099A1 (fr) 2005-03-25
FR2860099B1 true FR2860099B1 (fr) 2006-01-06

Family

ID=34224341

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0310984A Expired - Fee Related FR2860099B1 (fr) 2003-09-18 2003-09-18 Procede de realisation d'un transistor a effet de champ et transistor ainsi obtenu

Country Status (2)

Country Link
US (1) US7297578B2 (fr)
FR (1) FR2860099B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2897202B1 (fr) * 2006-02-08 2008-09-12 St Microelectronics Crolles 2 Transistor mos a barriere de schottky sur film semi-conducteur entierement appauvri et procede de fabrication d'un tel transistor.

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
KR100205442B1 (ko) * 1995-12-26 1999-07-01 구본준 박막트랜지스터 및 그의 제조방법
US5753557A (en) * 1996-10-07 1998-05-19 Vanguard International Semiconductor Company Bridge-free self aligned silicide process
JPH118390A (ja) * 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
FR2806832B1 (fr) * 2000-03-22 2002-10-25 Commissariat Energie Atomique Transistor mos a source et drain metalliques, et procede de fabrication d'un tel transistor
KR100414217B1 (ko) * 2001-04-12 2004-01-07 삼성전자주식회사 게이트 올 어라운드형 트랜지스터를 가진 반도체 장치 및그 형성 방법
US6803313B2 (en) * 2002-09-27 2004-10-12 Advanced Micro Devices, Inc. Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
US7176041B2 (en) * 2003-07-01 2007-02-13 Samsung Electronics Co., Ltd. PAA-based etchant, methods of using same, and resultant structures
US6921700B2 (en) * 2003-07-31 2005-07-26 Freescale Semiconductor, Inc. Method of forming a transistor having multiple channels

Also Published As

Publication number Publication date
US20050085024A1 (en) 2005-04-21
FR2860099A1 (fr) 2005-03-25
US7297578B2 (en) 2007-11-20

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100531