[go: up one dir, main page]

FR2848335B1 - Procede d'elaboration de diamant de type n a haute conductivite electrique - Google Patents

Procede d'elaboration de diamant de type n a haute conductivite electrique

Info

Publication number
FR2848335B1
FR2848335B1 FR0215453A FR0215453A FR2848335B1 FR 2848335 B1 FR2848335 B1 FR 2848335B1 FR 0215453 A FR0215453 A FR 0215453A FR 0215453 A FR0215453 A FR 0215453A FR 2848335 B1 FR2848335 B1 FR 2848335B1
Authority
FR
France
Prior art keywords
diamond
conductivity
preparation
type
type diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0215453A
Other languages
English (en)
Other versions
FR2848335A1 (fr
Inventor
Jacques Paul Marie Chevallier
Zepherin Symplice Teukam
Dominique Ballutaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VERSAILLES ST QUENTIN EN, University of
Centre National de la Recherche Scientifique CNRS
Universite de Versailles Saint Quentin en Yvelines
Original Assignee
VERSAILLES ST QUENTIN EN, University of
Centre National de la Recherche Scientifique CNRS
Universite de Versailles Saint Quentin en Yvelines
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VERSAILLES ST QUENTIN EN, University of, Centre National de la Recherche Scientifique CNRS, Universite de Versailles Saint Quentin en Yvelines filed Critical VERSAILLES ST QUENTIN EN, University of
Priority to FR0215453A priority Critical patent/FR2848335B1/fr
Priority to JP2004558172A priority patent/JP4823523B2/ja
Priority to AU2003298415A priority patent/AU2003298415A1/en
Priority to EP03796163A priority patent/EP1568072A1/fr
Priority to PCT/FR2003/003592 priority patent/WO2004053960A1/fr
Publication of FR2848335A1 publication Critical patent/FR2848335A1/fr
Priority to US11/144,279 priority patent/US7368317B2/en
Application granted granted Critical
Publication of FR2848335B1 publication Critical patent/FR2848335B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P32/1204—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H10P95/92—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
FR0215453A 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique Expired - Fee Related FR2848335B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0215453A FR2848335B1 (fr) 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique
JP2004558172A JP4823523B2 (ja) 2002-12-06 2003-12-04 高い電気伝導率を有するｎ−型ダイヤモンドを製造する方法
AU2003298415A AU2003298415A1 (en) 2002-12-06 2003-12-04 Method of producing an n-type diamond with high electrical conductivity
EP03796163A EP1568072A1 (fr) 2002-12-06 2003-12-04 Procede d elaboration de diamant de type n a haute conductiv ite electrique
PCT/FR2003/003592 WO2004053960A1 (fr) 2002-12-06 2003-12-04 Procede d'elaboration de diamant de type n a haute conductivite electrique
US11/144,279 US7368317B2 (en) 2002-12-06 2005-06-03 Method of producing an N-type diamond with high electrical conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0215453A FR2848335B1 (fr) 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique

Publications (2)

Publication Number Publication Date
FR2848335A1 FR2848335A1 (fr) 2004-06-11
FR2848335B1 true FR2848335B1 (fr) 2005-10-07

Family

ID=32320061

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0215453A Expired - Fee Related FR2848335B1 (fr) 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique

Country Status (6)

Country Link
US (1) US7368317B2 (fr)
EP (1) EP1568072A1 (fr)
JP (1) JP4823523B2 (fr)
AU (1) AU2003298415A1 (fr)
FR (1) FR2848335B1 (fr)
WO (1) WO2004053960A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ301547B6 (cs) * 2008-08-29 2010-04-14 Fyzikální ústav AV CR, v.v.i. Zpusob dopování diamantu prenosem náboje z organických barviv
US8111724B2 (en) * 2009-07-07 2012-02-07 International Business Machines Corporation Temperature control device for optoelectronic devices
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
SG191220A1 (en) 2010-12-23 2013-07-31 Element Six Ltd Controlling doping of synthetic diamond material
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
US8933462B2 (en) 2011-12-21 2015-01-13 Akhan Semiconductor, Inc. Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05139889A (ja) * 1991-11-21 1993-06-08 Canon Inc ダイヤモンド結晶
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same
JP3165536B2 (ja) * 1992-11-12 2001-05-14 松下電器産業株式会社 半導体ダイヤモンドの形成方法及び装置
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
JP3232470B2 (ja) 1995-07-02 2001-11-26 科学技術振興事業団 水素化アモルファスカーボンを用いた単結晶ダイヤモンドの合成法
US5653800A (en) * 1995-08-03 1997-08-05 Eneco, Inc. Method for producing N-type semiconducting diamond
JP3893710B2 (ja) 1997-02-12 2007-03-14 東レ株式会社 オイル薄膜の形成方法およびその薄膜を用いた蒸着製品の製造方法
JPH10247624A (ja) 1997-03-05 1998-09-14 Asahi Chem Ind Co Ltd ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法
JP3568394B2 (ja) * 1998-07-07 2004-09-22 独立行政法人 科学技術振興機構 低抵抗ｎ型ダイヤモンドの合成法

Also Published As

Publication number Publication date
AU2003298415A8 (en) 2004-06-30
US20050266606A1 (en) 2005-12-01
JP2006508887A (ja) 2006-03-16
WO2004053960A1 (fr) 2004-06-24
JP4823523B2 (ja) 2011-11-24
EP1568072A1 (fr) 2005-08-31
FR2848335A1 (fr) 2004-06-11
AU2003298415A1 (en) 2004-06-30
US7368317B2 (en) 2008-05-06

Similar Documents

Publication Publication Date Title
FR2841264B1 (fr) PROCEDE DE PREPARATION D'UN ALLIAGE AI-Zn-Mg-Cu A HAUTE RESISTANCE
EP1456132A4 (fr) Procede de desionisation fractionnelle
EP1592053A4 (fr) Procede de fabrication d'un cablage
DE60205413D1 (de) Herstellungsverfahren
EP1592052A4 (fr) Procede de fabrication d'un affichage
FR2848335B1 (fr) Procede d'elaboration de diamant de type n a haute conductivite electrique
EP1508632A4 (fr) Monocristal cdte et polycristal cdte et leur procede de fabrication
FR2846964B1 (fr) Procede de fabrication de 1,2-epoxy-3-chloropropane
FR2828607B1 (fr) Procede de securisation de bases de donnees
FR2843061B1 (fr) Procede de polissage de tranche de materiau
ITMO20030173A1 (it) Procedimento per l'ottenimento di un preparato fertilizzante
ATE360674T1 (de) Hydrierverfahren
MA26407A1 (fr) Procede de preparation de combretastatines
ITMI20011764A0 (it) Metodo per l'ottenimento del pemirolast ad elevata purezza
EP1392722A4 (fr) Procede visant les echinocandines
EP1547993A4 (fr) Procede de preparation de spirofluorenols
FR2842194B1 (fr) Procede de preparation d'un nitrophenol
EP1565448A4 (fr) Procede de preparation de 10h-dibenzo b,f 1,4 thiazepin-11-one
FR2862187B1 (fr) Nouvelles compositions agrochimiques et leur procede de fabrication
EP1637883A4 (fr) Procede d'imunochromatographie
EP1682627A4 (fr) Procede de preparation de methyllithium
EP1679982A4 (fr) Procede d'inactivation de spores
EP1646078A4 (fr) Procede de croissance epitaxiale
EP1295864A4 (fr) Procede de preparation de 1,5-diaminonaphtalenes
DE60237973D1 (de) Dampfaufwachsverfahren

Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20140829