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FR2844095B1 - Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie - Google Patents

Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie

Info

Publication number
FR2844095B1
FR2844095B1 FR0210884A FR0210884A FR2844095B1 FR 2844095 B1 FR2844095 B1 FR 2844095B1 FR 0210884 A FR0210884 A FR 0210884A FR 0210884 A FR0210884 A FR 0210884A FR 2844095 B1 FR2844095 B1 FR 2844095B1
Authority
FR
France
Prior art keywords
sicoi
manufacturing
type composite
composite substrate
epitaxy step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0210884A
Other languages
English (en)
Other versions
FR2844095A1 (fr
Inventor
Francois Templier
Cioccio Lea Di
Thierry Billon
Fabrice Letertre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0210884A priority Critical patent/FR2844095B1/fr
Priority to JP2004537240A priority patent/JP2005537678A/ja
Priority to PCT/FR2003/050044 priority patent/WO2004027844A2/fr
Priority to US10/526,657 priority patent/US20060125057A1/en
Priority to EP03780258A priority patent/EP1547145A2/fr
Priority to TW092124198A priority patent/TW200416878A/zh
Publication of FR2844095A1 publication Critical patent/FR2844095A1/fr
Application granted granted Critical
Publication of FR2844095B1 publication Critical patent/FR2844095B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W10/00—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H10P14/2904—
    • H10P14/2926—
    • H10P14/3208—
    • H10P14/3408—
    • H10P90/1914—
    • H10W10/01—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
FR0210884A 2002-09-03 2002-09-03 Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie Expired - Fee Related FR2844095B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0210884A FR2844095B1 (fr) 2002-09-03 2002-09-03 Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie
JP2004537240A JP2005537678A (ja) 2002-09-03 2003-09-01 エピタキシー段階を含むＳｉＣＯＩ型複合基板の製造方法
PCT/FR2003/050044 WO2004027844A2 (fr) 2002-09-03 2003-09-01 PROCEDE DE FABRICATION D'UN SUBSTRAT COMPOSITE DU TYPE SiCOI COMPRENANT UNE ETAPE D'EPITAXIE
US10/526,657 US20060125057A1 (en) 2002-09-03 2003-09-01 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage
EP03780258A EP1547145A2 (fr) 2002-09-03 2003-09-01 PROCEDE DE FABRICATION D' UN SUBSTRAT COMPOSITE DU TYPE SiCOI COMPRENANT UNE ETAPE D' EPITAXIE
TW092124198A TW200416878A (en) 2002-09-03 2003-09-02 SiCOI type composite substrate manufacturing method comprising an epitaxy step

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0210884A FR2844095B1 (fr) 2002-09-03 2002-09-03 Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie

Publications (2)

Publication Number Publication Date
FR2844095A1 FR2844095A1 (fr) 2004-03-05
FR2844095B1 true FR2844095B1 (fr) 2005-01-28

Family

ID=31503071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0210884A Expired - Fee Related FR2844095B1 (fr) 2002-09-03 2002-09-03 Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie

Country Status (6)

Country Link
US (1) US20060125057A1 (fr)
EP (1) EP1547145A2 (fr)
JP (1) JP2005537678A (fr)
FR (1) FR2844095B1 (fr)
TW (1) TW200416878A (fr)
WO (1) WO2004027844A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
CA2584950A1 (fr) * 2006-04-26 2007-10-26 Kansai Paint Co., Ltd. Composition d'appret en poudre et methode pour former un film de revetement
US7696000B2 (en) * 2006-12-01 2010-04-13 International Business Machines Corporation Low defect Si:C layer with retrograde carbon profile
JP4532536B2 (ja) 2007-12-19 2010-08-25 トヨタ自動車株式会社 半導体装置
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
JP2017055086A (ja) 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
JP6723416B2 (ja) * 2019-06-28 2020-07-15 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
FR3114912B1 (fr) * 2020-10-06 2022-09-02 Soitec Silicon On Insulator Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium
FR3114909B1 (fr) * 2020-10-06 2023-03-17 Soitec Silicon On Insulator Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63103893A (ja) * 1986-10-20 1988-05-09 Sanyo Electric Co Ltd ６Ｈ−ＳｉＣ基板の製造方法
JPH01220458A (ja) * 1988-02-29 1989-09-04 Fujitsu Ltd 半導体装置
JPH06188163A (ja) * 1992-12-21 1994-07-08 Toyota Central Res & Dev Lab Inc 半導体装置作製用ＳｉＣ単結晶基板とその製造方法
US5840221A (en) * 1996-12-02 1998-11-24 Saint-Gobain/Norton Industrial Ceramics Corporation Process for making silicon carbide reinforced silicon carbide composite
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
JP3719323B2 (ja) * 1997-03-05 2005-11-24 株式会社デンソー 炭化珪素半導体装置
JPH10261615A (ja) * 1997-03-17 1998-09-29 Fuji Electric Co Ltd ＳｉＣ半導体の表面モホロジー制御方法およびＳｉＣ半導体薄膜の成長方法
JPH10279376A (ja) * 1997-03-31 1998-10-20 Toyo Tanso Kk 炭素−炭化ケイ素複合材料を用いた連続鋳造用部材
FR2774214B1 (fr) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
US6328796B1 (en) * 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
JP2000223683A (ja) * 1999-02-02 2000-08-11 Canon Inc 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにｓｏｉ基板の製造方法
WO2001009412A1 (fr) * 1999-07-30 2001-02-08 Nippon Pillar Packing Co., Ltd. Materiau de tirage de sic monocristallin et procede de preparation associe
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
JP2002220299A (ja) * 2001-01-19 2002-08-09 Hoya Corp 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料

Also Published As

Publication number Publication date
FR2844095A1 (fr) 2004-03-05
JP2005537678A (ja) 2005-12-08
WO2004027844A2 (fr) 2004-04-01
WO2004027844A3 (fr) 2004-05-21
EP1547145A2 (fr) 2005-06-29
TW200416878A (en) 2004-09-01
US20060125057A1 (en) 2006-06-15

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Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20120531