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FR2604561B1 - Dispositif photovoltaique - Google Patents

Dispositif photovoltaique

Info

Publication number
FR2604561B1
FR2604561B1 FR878713301A FR8713301A FR2604561B1 FR 2604561 B1 FR2604561 B1 FR 2604561B1 FR 878713301 A FR878713301 A FR 878713301A FR 8713301 A FR8713301 A FR 8713301A FR 2604561 B1 FR2604561 B1 FR 2604561B1
Authority
FR
France
Prior art keywords
photovoltaic device
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR878713301A
Other languages
English (en)
Other versions
FR2604561A1 (fr
Inventor
Yukio Nakashima
Kaneo Watanabe
Masayuki Iwamoto
Koji Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61228796A external-priority patent/JPS6384079A/ja
Priority claimed from JP62139232A external-priority patent/JP2680579B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of FR2604561A1 publication Critical patent/FR2604561A1/fr
Application granted granted Critical
Publication of FR2604561B1 publication Critical patent/FR2604561B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1668—Amorphous semiconductors including only Group IV materials presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10P14/24—
    • H10P14/2922—
    • H10P14/3208—
    • H10P14/3211—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR878713301A 1986-09-26 1987-09-25 Dispositif photovoltaique Expired - Fee Related FR2604561B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61228796A JPS6384079A (ja) 1986-09-26 1986-09-26 光起電力装置
JP62139232A JP2680579B2 (ja) 1987-06-03 1987-06-03 光起電力装置

Publications (2)

Publication Number Publication Date
FR2604561A1 FR2604561A1 (fr) 1988-04-01
FR2604561B1 true FR2604561B1 (fr) 1991-08-30

Family

ID=26472106

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878713301A Expired - Fee Related FR2604561B1 (fr) 1986-09-26 1987-09-25 Dispositif photovoltaique

Country Status (3)

Country Link
US (1) US4799968A (fr)
DE (1) DE3732617C2 (fr)
FR (1) FR2604561B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2615327A1 (fr) * 1987-03-27 1988-11-18 Sanyo Electric Co Dispositif photovoltaique
JPS63182551U (fr) * 1987-05-15 1988-11-24
JPH01128477A (ja) * 1987-11-12 1989-05-22 Ricoh Co Ltd アモルファスシリコン光センサー
US5152833A (en) * 1989-08-31 1992-10-06 Sanyo Electric Co., Ltd. Amorphous silicon film, its production and photo semiconductor device utilizing such a film
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
AU632241B2 (en) * 1990-09-06 1992-12-17 Mitsui Toatsu Chemicals Inc. Amorphous silicon solar cell and method for manufacturing the same
US5616932A (en) * 1993-11-22 1997-04-01 Sanyo Electric Co., Ltd. Amorphous silicon germanium film and semiconductor device using the same
IT1272248B (it) * 1994-05-12 1997-06-16 Univ Roma Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori
DE102006042617B4 (de) * 2006-09-05 2010-04-08 Q-Cells Se Verfahren zur Erzeugung von lokalen Kontakten
KR101295547B1 (ko) * 2009-10-07 2013-08-12 엘지전자 주식회사 박막 태양 전지 모듈 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533450A (en) * 1979-12-31 1985-08-06 Exxon Research And Engineering Co. Control of the hydrogen bonding in reactively sputtered amorphous silicon
US4385199A (en) * 1980-12-03 1983-05-24 Yoshihiro Hamakawa Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
US4376688A (en) * 1981-04-03 1983-03-15 Xerox Corporation Method for producing semiconductor films
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
DE3485373D1 (de) * 1984-02-14 1992-01-30 Energy Conversion Devices Inc Verfahren zur herstellung eines fotoleitfaehigen elementes.
US4531015A (en) * 1984-04-12 1985-07-23 Atlantic Richfield Company PIN Amorphous silicon solar cell with nitrogen compensation
US4637869A (en) * 1984-09-04 1987-01-20 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films
DE3441044A1 (de) * 1984-11-09 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen

Also Published As

Publication number Publication date
DE3732617A1 (de) 1988-04-07
FR2604561A1 (fr) 1988-04-01
US4799968A (en) 1989-01-24
DE3732617C2 (de) 1994-05-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060531