FR2682521B1 - Dispositif integre a memoire a semiconducteurs. - Google Patents

Dispositif integre a memoire a semiconducteurs.

Info

Publication number: FR2682521B1
Authority: FR; France
Prior art keywords: memory device; semiconductor memory; integrated semiconductor; integrated; semiconductor
Prior art date: 1991-10-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

FR9202391A

Other languages

English (en)

Other versions

FR2682521A1 (fr

Inventor

Takashi Nakashima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-10-14

Filing date

1992-02-28

Publication date

1996-03-15

1992-02-28 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1993-04-16 Publication of FR2682521A1 publication Critical patent/FR2682521A1/fr

1996-03-15 Application granted granted Critical

1996-03-15 Publication of FR2682521B1 publication Critical patent/FR2682521B1/fr

2012-02-28 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

FR9202391A 1991-10-14 1992-02-28 Dispositif integre a memoire a semiconducteurs. Expired - Lifetime FR2682521B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019910018043A KR940006676B1 (ko)	1991-10-14	1991-10-14	시험회로를 내장한 기억용 반도체 집적회로

Publications (2)

Publication Number	Publication Date
FR2682521A1 FR2682521A1 (fr)	1993-04-16
FR2682521B1 true FR2682521B1 (fr)	1996-03-15

Family

ID=19321217

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9202391A Expired - Lifetime FR2682521B1 (fr)	1991-10-14	1992-02-28	Dispositif integre a memoire a semiconducteurs.

Country Status (7)

Country	Link
US (1)	US5351213A (fr)
JP (1)	JP2526344B2 (fr)
KR (1)	KR940006676B1 (fr)
DE (1)	DE4206344C2 (fr)
FR (1)	FR2682521B1 (fr)
GB (1)	GB2260618B (fr)
IT (1)	IT1254651B (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6208195B1 (en)	1991-03-18	2001-03-27	Integrated Device Technology, Inc.	Fast transmission gate switch
WO1992016998A1 (fr)	1991-03-18	1992-10-01	Quality Semiconductor, Inc.	Commutateur a grille de transmission rapide
TW260788B (fr) *	1993-09-01	1995-10-21	Philips Electronics Nv
DE69406942T2 (de) *	1993-09-16	1998-03-19	Quality Semiconductor Inc	Abtastprüfungsschaltung mit schnellem übertragungsgateschalter
US5535164A (en) *	1995-03-03	1996-07-09	International Business Machines Corporation	BIST tester for multiple memories
US6388314B1 (en) *	1995-08-17	2002-05-14	Micron Technology, Inc.	Single deposition layer metal dynamic random access memory
KR100197554B1 (ko) *	1995-09-30	1999-06-15	윤종용	반도체 메모리장치의 고속테스트 방법
US5925142A (en) *	1995-10-06	1999-07-20	Micron Technology, Inc.	Self-test RAM using external synchronous clock
US5721863A (en) *	1996-01-29	1998-02-24	International Business Machines Corporation	Method and structure for accessing semi-associative cache memory using multiple memories to store different components of the address
US5703818A (en) *	1996-08-26	1997-12-30	Mitsubishi Denki Kabushiki Kaisha	Test circuit
US5740180A (en) *	1997-02-18	1998-04-14	Motorola, Inc.	Circuit and test method for testing input cells
DE19711097C2 (de) *	1997-03-17	2000-04-06	Siemens Ag	Integrierte Schaltung mit einem Speicher und einer Prüfschaltung
US5903491A (en)	1997-06-09	1999-05-11	Micron Technology, Inc.	Single deposition layer metal dynamic random access memory
US5848010A (en) *	1997-07-14	1998-12-08	Micron Technology, Inc.	Circuit and method for antifuse stress test
JP3235523B2 (ja) *	1997-08-06	2001-12-04	日本電気株式会社	半導体集積回路
US6154864A (en) *	1998-05-19	2000-11-28	Micron Technology, Inc.	Read only memory embedded in a dynamic random access memory
KR100333536B1 (ko) *	1998-05-29	2002-08-27	주식회사 하이닉스반도체	센스앰프를이용하여테스트를수행하는메모리소자
US6747889B2 (en) *	2001-12-12	2004-06-08	Micron Technology, Inc.	Half density ROM embedded DRAM
US6603693B2 (en)	2001-12-12	2003-08-05	Micron Technology, Inc.	DRAM with bias sensing
US6545899B1 (en) *	2001-12-12	2003-04-08	Micron Technology, Inc.	ROM embedded DRAM with bias sensing
US20030115538A1 (en) *	2001-12-13	2003-06-19	Micron Technology, Inc.	Error correction in ROM embedded DRAM
JP2003288800A (ja) *	2002-03-27	2003-10-10	Nec Electronics Corp	半導体記憶装置のテスト方法、半導体記憶装置及び半導体装置
US20030185062A1 (en) *	2002-03-28	2003-10-02	Micron Technology, Inc.	Proximity lookup for large arrays
US6785167B2 (en) *	2002-06-18	2004-08-31	Micron Technology, Inc.	ROM embedded DRAM with programming
US6781867B2 (en) *	2002-07-11	2004-08-24	Micron Technology, Inc.	Embedded ROM device using substrate leakage
US6865100B2 (en) *	2002-08-12	2005-03-08	Micron Technology, Inc.	6F2 architecture ROM embedded DRAM
DE10245712A1 (de) *	2002-10-01	2004-04-22	Infineon Technologies Ag	Speicherschaltung mit einem Testmodus zum Schreiben von Testdaten
US7174477B2 (en) *	2003-02-04	2007-02-06	Micron Technology, Inc.	ROM redundancy in ROM embedded DRAM
US6836106B1 (en) *	2003-09-23	2004-12-28	International Business Machines Corporation	Apparatus and method for testing semiconductors
US7152192B2 (en) *	2005-01-20	2006-12-19	Hewlett-Packard Development Company, L.P.	System and method of testing a plurality of memory blocks of an integrated circuit in parallel

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2002129B (en) *	1977-08-03	1982-01-20	Sperry Rand Corp	Apparatus for testing semiconductor memories
US4196389A (en) *	1978-07-13	1980-04-01	International Business Machines Corporation	Test site for a charged coupled device (CCD) array
US4253059A (en) *	1979-05-14	1981-02-24	Fairchild Camera & Instrument Corp.	EPROM Reliability test circuit
JPS5736844A (en) *	1980-08-15	1982-02-27	Hitachi Ltd	Semiconductor device
JPS5893347A (ja) *	1981-11-30	1983-06-03	Toshiba Corp	Ｍｏｓ型半導体装置及びその製造方法
US4757503A (en) *	1985-01-18	1988-07-12	The University Of Michigan	Self-testing dynamic ram
JP2508629B2 (ja) *	1985-02-28	1996-06-19	日本電気株式会社	半導体メモリ
JPS61260668A (ja) *	1985-05-15	1986-11-18	Seiko Epson Corp	半導体装置
JPS62169355A (ja) *	1986-01-21	1987-07-25	Sharp Corp	半導体集積回路素子
JPH01253266A (ja) *	1988-03-31	1989-10-09	Sharp Corp	半導体集積回路
GB2222461B (en) *	1988-08-30	1993-05-19	Mitsubishi Electric Corp	On chip testing of semiconductor memory devices
GB2256279B (en) *	1988-08-30	1993-05-12	Mitsubishi Electric Corp	Semiconductor memory device
JP2901188B2 (ja) *	1988-12-28	1999-06-07	株式会社東芝	半導体集積回路
JP2518401B2 (ja) *	1989-06-14	1996-07-24	三菱電機株式会社	半導体記憶装置
US5265100A (en) *	1990-07-13	1993-11-23	Sgs-Thomson Microelectronics, Inc.	Semiconductor memory with improved test mode
JPH0372770A (ja) *	1990-07-17	1991-03-27	Seiko Epson Corp	読み取り装置

1991
- 1991-10-14 KR KR1019910018043A patent/KR940006676B1/ko not_active Expired - Fee Related
1992
- 1992-02-28 US US07/843,260 patent/US5351213A/en not_active Expired - Lifetime
- 1992-02-28 FR FR9202391A patent/FR2682521B1/fr not_active Expired - Lifetime
- 1992-02-28 GB GB9204291A patent/GB2260618B/en not_active Expired - Lifetime
- 1992-02-28 IT ITMI920457A patent/IT1254651B/it active
- 1992-02-29 DE DE4206344A patent/DE4206344C2/de not_active Expired - Lifetime
- 1992-04-10 JP JP9091292A patent/JP2526344B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR930008868A (ko)	1993-05-22
ITMI920457A0 (it)	1992-02-28
GB2260618A (en)	1993-04-21
GB2260618B (en)	1996-05-22
US5351213A (en)	1994-09-27
ITMI920457A1 (it)	1993-08-28
JPH05274899A (ja)	1993-10-22
DE4206344C2 (de)	1994-04-21
KR940006676B1 (ko)	1994-07-25
DE4206344A1 (de)	1993-04-15
IT1254651B (it)	1995-09-28
JP2526344B2 (ja)	1996-08-21
FR2682521A1 (fr)	1993-04-16
GB9204291D0 (en)	1992-04-08

Publication	Publication Date	Title
FR2682521B1 (fr)	1996-03-15	Dispositif integre a memoire a semiconducteurs.
FR2640796B1 (fr)	1994-09-23	Dispositif de memoire a semi-conducteurs
DE69232356D1 (de)	2002-02-21	Halbleiterspeicheranordnung
FR2600453B1 (fr)	1993-12-03	Dispositif de memoire a semi-conducteurs
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
EP0588402A3 (fr)	1995-07-19	Dispositif de mémoire à semi-conducteurs.
FR2506990B1 (fr)	1989-04-28	Dispositif de memoire a semi-conducteurs
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
IT1241520B (it)	1994-01-17	"dispositivo di memoria a semiconduttori".
EP0654830A3 (fr)	1997-10-22	Dispositif de circuit intégré semi-conducteur.
FR2679368B1 (fr)	1993-12-24	Memoire tampon de sortie de donnees d'un dispositif de memoire a semiconducteurs.
DE69016153D1 (de)	1995-03-02	Nichtflüchtige Halbleiterspeicheranordnung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
EP0627741A3 (fr)	1996-06-12	Dispositif de mémoire à semiconducteurs.
FR2551904B1 (fr)	1992-06-19	Dispositif de memoire a semiconducteurs
DE68923624D1 (de)	1995-08-31	Halbleiterspeicheranordnung.
FR2663142B1 (fr)	1995-10-27	Dispositif electronique portable a memoire.
FR2689683B1 (fr)	1994-05-20	Dispositif semiconducteur a transistors complementaires.
FR2687003B1 (fr)	1994-09-23	Circuit de sortie de donnees pour un dispositif de memoire a semi-conducteur.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.
DE69203253D1 (de)	1995-08-10	IC-Chipstruktur.
FR2706672B1 (fr)	1996-04-05	Dispositif de mémoire à semiconducteurs.
FR2673325B1 (fr)	1997-03-14	Dispositif de memoire a semiconducteurs avec un condensateur empile.
EP0570977A3 (fr)	1995-03-22	Dispositif de mémoire à semi-conducteur.