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FR2309038A1 - Procede de realisation de transistors par diffusion de matieres de dopage - Google Patents

Procede de realisation de transistors par diffusion de matieres de dopage

Info

Publication number
FR2309038A1
FR2309038A1 FR7611575A FR7611575A FR2309038A1 FR 2309038 A1 FR2309038 A1 FR 2309038A1 FR 7611575 A FR7611575 A FR 7611575A FR 7611575 A FR7611575 A FR 7611575A FR 2309038 A1 FR2309038 A1 FR 2309038A1
Authority
FR
France
Prior art keywords
diffusion
doping materials
making transistors
transistors
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7611575A
Other languages
English (en)
Other versions
FR2309038B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2309038A1 publication Critical patent/FR2309038A1/fr
Application granted granted Critical
Publication of FR2309038B1 publication Critical patent/FR2309038B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W74/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/662—
    • H10P14/68—
    • H10P14/69215—
    • H10P14/6922—
    • H10P14/69433—
    • H10P32/14—
    • H10P32/171—
    • H10P95/00—
FR7611575A 1975-04-21 1976-04-20 Procede de realisation de transistors par diffusion de matieres de dopage Granted FR2309038A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/570,036 US4006046A (en) 1975-04-21 1975-04-21 Method for compensating for emitter-push effect in the fabrication of transistors

Publications (2)

Publication Number Publication Date
FR2309038A1 true FR2309038A1 (fr) 1976-11-19
FR2309038B1 FR2309038B1 (fr) 1982-04-23

Family

ID=24277930

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7611575A Granted FR2309038A1 (fr) 1975-04-21 1976-04-20 Procede de realisation de transistors par diffusion de matieres de dopage

Country Status (5)

Country Link
US (1) US4006046A (fr)
DE (1) DE2617293C3 (fr)
FR (1) FR2309038A1 (fr)
GB (1) GB1549453A (fr)
NL (1) NL7603939A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102715A (en) * 1975-12-19 1978-07-25 Matsushita Electric Industrial Co., Ltd. Method for diffusing an impurity into a semiconductor body
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
US4225874A (en) * 1978-03-09 1980-09-30 Rca Corporation Semiconductor device having integrated diode
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4868624A (en) * 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
US4263066A (en) * 1980-06-09 1981-04-21 Varian Associates, Inc. Process for concurrent formation of base diffusion and p+ profile from single source predeposition
JPS57194572A (en) * 1981-05-27 1982-11-30 Clarion Co Ltd Semiconductor device and manufacture thereof
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US4978636A (en) * 1989-12-26 1990-12-18 Motorola Inc. Method of making a semiconductor diode
US5126281A (en) * 1990-09-11 1992-06-30 Hewlett-Packard Company Diffusion using a solid state source
US5374566A (en) * 1993-01-27 1994-12-20 National Semiconductor Corporation Method of fabricating a BiCMOS structure
US5541121A (en) * 1995-01-30 1996-07-30 Texas Instruments Incorporated Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
EP0974165B1 (fr) * 1998-02-09 2009-03-25 Nxp B.V. Dispositif semi-conducteur a transistor bipolaire, et procede de fabrication associe
TWI501292B (zh) * 2012-09-26 2015-09-21 財團法人工業技術研究院 形成圖案化摻雜區的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2112280A1 (fr) * 1970-10-09 1972-06-16 Fujitsu Ltd
US3719535A (en) * 1970-12-21 1973-03-06 Motorola Inc Hyperfine geometry devices and method for their fabrication
US3765963A (en) * 1970-04-03 1973-10-16 Fujitsu Ltd Method of manufacturing semiconductor devices
FR2191273A1 (fr) * 1972-07-05 1974-02-01 Motorola Inc

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3575742A (en) * 1964-11-09 1971-04-20 Solitron Devices Method of making a semiconductor device
CH482795A (de) * 1966-09-06 1969-12-15 Ciba Geigy Verfahren zur Herstellung neuer Monoazofarbstoffpigmente
US3615938A (en) * 1969-01-28 1971-10-26 Westinghouse Electric Corp Method for diffusion of acceptor impurities into semiconductors
US3839104A (en) * 1972-08-31 1974-10-01 Texas Instruments Inc Fabrication technique for high performance semiconductor devices
US3915767A (en) * 1973-02-05 1975-10-28 Honeywell Inc Rapidly responsive transistor with narrowed base

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765963A (en) * 1970-04-03 1973-10-16 Fujitsu Ltd Method of manufacturing semiconductor devices
FR2112280A1 (fr) * 1970-10-09 1972-06-16 Fujitsu Ltd
US3719535A (en) * 1970-12-21 1973-03-06 Motorola Inc Hyperfine geometry devices and method for their fabrication
FR2191273A1 (fr) * 1972-07-05 1974-02-01 Motorola Inc

Also Published As

Publication number Publication date
DE2617293C3 (de) 1979-03-15
FR2309038B1 (fr) 1982-04-23
DE2617293A1 (de) 1976-11-04
NL7603939A (nl) 1976-10-25
US4006046A (en) 1977-02-01
GB1549453A (en) 1979-08-08
DE2617293B2 (de) 1978-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse