FR2130075B1 - - Google Patents
Info
- Publication number
- FR2130075B1 FR2130075B1 FR7200573A FR7200573A FR2130075B1 FR 2130075 B1 FR2130075 B1 FR 2130075B1 FR 7200573 A FR7200573 A FR 7200573A FR 7200573 A FR7200573 A FR 7200573A FR 2130075 B1 FR2130075 B1 FR 2130075B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P14/6939—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
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- H10P14/6306—
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- H10P14/6336—
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- H10P50/282—
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- H10W74/40—
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- H10W74/43—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00125993A US3849276A (en) | 1971-03-19 | 1971-03-19 | Process for forming reactive layers whose thickness is independent of time |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2130075A1 FR2130075A1 (en) | 1972-11-03 |
| FR2130075B1 true FR2130075B1 (en) | 1974-09-13 |
Family
ID=22422437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7200573A Expired FR2130075B1 (en) | 1971-03-19 | 1972-01-04 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3849276A (en) |
| JP (1) | JPS526269B1 (en) |
| DE (1) | DE2203080C2 (en) |
| FR (1) | FR2130075B1 (en) |
| GB (1) | GB1380165A (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3984301A (en) * | 1973-08-11 | 1976-10-05 | Nippon Electric Varian, Ltd. | Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge |
| JPS52151471U (en) * | 1976-05-13 | 1977-11-16 | ||
| US4075756A (en) * | 1976-06-30 | 1978-02-28 | International Business Machines Corporation | Process for fabricating above and below ground plane wiring on one side of a supporting substrate and the resulting circuit configuration |
| JPS5342274U (en) * | 1976-09-16 | 1978-04-12 | ||
| FR2371777A1 (en) * | 1976-11-18 | 1978-06-16 | Loic Henry | METHOD OF MANUFACTURING A SILICON NITRIDE DIFFUSION BARRIER ON A SEMICONDUCTOR SUBSTRATE, IN PARTICULAR OF THE III-V TYPE |
| JPS5460364U (en) * | 1977-10-05 | 1979-04-26 | ||
| JPS5588382A (en) * | 1978-12-27 | 1980-07-04 | Fujitsu Ltd | Preparation of tunnel junction type josephson element |
| US4274015A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | Self-resetting Josephson digital current amplifier |
| US4246296A (en) * | 1979-02-14 | 1981-01-20 | Bell Telephone Laboratories, Incorporated | Controlling the properties of native films using selective growth chemistry |
| JPS55155171A (en) * | 1979-05-23 | 1980-12-03 | Hitachi Ltd | Refrigerating chamber |
| US4360898A (en) * | 1980-06-30 | 1982-11-23 | International Business Machines Corporation | Programmable logic array system incorporating Josephson devices |
| US4351712A (en) * | 1980-12-10 | 1982-09-28 | International Business Machines Corporation | Low energy ion beam oxidation process |
| US4430662A (en) * | 1981-04-09 | 1984-02-07 | Sperry Corporation | Superconductive tunnel junction integrated circuit |
| US4859253A (en) * | 1988-07-20 | 1989-08-22 | International Business Machines Corporation | Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface |
| US6355580B1 (en) | 1998-09-03 | 2002-03-12 | Micron Technology, Inc. | Ion-assisted oxidation methods and the resulting structures |
| US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| US9117767B2 (en) | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
| US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH233236A (en) * | 1941-11-01 | 1944-07-15 | Berghaus Bernhard | Process for the compensation of objects. |
| CH342980A (en) * | 1950-11-09 | 1959-12-15 | Berghaus Elektrophysik Anst | Process for the diffusion treatment of pipes made of iron and steel or their alloys |
| DE1040134B (en) * | 1956-10-25 | 1958-10-02 | Siemens Ag | Process for the production of semiconductor arrangements with semiconductor bodies with a p-n transition |
| US3573185A (en) * | 1968-12-16 | 1971-03-30 | Us Army | Anodic sputtering |
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1971
- 1971-03-19 US US00125993A patent/US3849276A/en not_active Expired - Lifetime
-
1972
- 1972-01-04 FR FR7200573A patent/FR2130075B1/fr not_active Expired
- 1972-01-22 DE DE2203080A patent/DE2203080C2/en not_active Expired
- 1972-01-26 JP JP47009133A patent/JPS526269B1/ja active Pending
- 1972-01-28 GB GB405272A patent/GB1380165A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4725070A (en) | 1972-10-19 |
| DE2203080C2 (en) | 1983-02-17 |
| GB1380165A (en) | 1975-01-08 |
| JPS526269B1 (en) | 1977-02-21 |
| DE2203080A1 (en) | 1972-09-28 |
| FR2130075A1 (en) | 1972-11-03 |
| US3849276A (en) | 1974-11-19 |