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FR2160545A1 - - Google Patents

Info

Publication number
FR2160545A1
FR2160545A1 FR7240738A FR7240738A FR2160545A1 FR 2160545 A1 FR2160545 A1 FR 2160545A1 FR 7240738 A FR7240738 A FR 7240738A FR 7240738 A FR7240738 A FR 7240738A FR 2160545 A1 FR2160545 A1 FR 2160545A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7240738A
Other versions
FR2160545B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2160545A1 publication Critical patent/FR2160545A1/fr
Application granted granted Critical
Publication of FR2160545B1 publication Critical patent/FR2160545B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
FR7240738A 1971-11-18 1972-11-16 Expired FR2160545B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19988071A 1971-11-18 1971-11-18

Publications (2)

Publication Number Publication Date
FR2160545A1 true FR2160545A1 (fr) 1973-06-29
FR2160545B1 FR2160545B1 (fr) 1980-08-14

Family

ID=22739396

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7240738A Expired FR2160545B1 (fr) 1971-11-18 1972-11-16

Country Status (8)

Country Link
US (1) US3751726A (fr)
JP (1) JPS5118783B2 (fr)
BE (1) BE791487A (fr)
CA (1) CA967289A (fr)
DE (1) DE2255676C2 (fr)
FR (1) FR2160545B1 (fr)
GB (1) GB1397086A (fr)
IT (1) IT968869B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389235A1 (fr) * 1977-04-27 1978-11-24 Itt Dispositif semi-conducteur a caracteristique de diode, en circuit integre monolithique
FR2527008A1 (fr) * 1982-05-14 1983-11-18 Thomson Csf Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7312547A (nl) * 1973-09-12 1975-03-14 Philips Nv Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting.
US3836997A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3909700A (en) * 1974-01-18 1975-09-30 Gen Electric Monolithic semiconductor rectifier circuit structure
JPS5419828Y2 (fr) * 1974-07-18 1979-07-20
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
JPS5210662A (en) * 1975-07-16 1977-01-27 Matsushita Electric Ind Co Ltd Semi-conductor circuit
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
US4243952A (en) * 1978-10-30 1981-01-06 Rca Corporation Temperature compensated bias circuit for semiconductor lasers
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
JP2714969B2 (ja) * 1989-01-13 1998-02-16 マツダ株式会社 自動車のサスペンション装置
US5541439A (en) * 1994-11-17 1996-07-30 Xerox Corporation Layout for a high voltage darlington pair

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260481A (fr) * 1960-02-08
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389235A1 (fr) * 1977-04-27 1978-11-24 Itt Dispositif semi-conducteur a caracteristique de diode, en circuit integre monolithique
FR2527008A1 (fr) * 1982-05-14 1983-11-18 Thomson Csf Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele
EP0097067A1 (fr) * 1982-05-14 1983-12-28 Thomson-Csf Structure semi-conductrice de type mesa associant un transistor vertical et une diode en antiparallèle

Also Published As

Publication number Publication date
US3751726A (en) 1973-08-07
BE791487A (fr) 1973-03-16
JPS5118783B2 (fr) 1976-06-12
GB1397086A (en) 1975-06-11
CA967289A (en) 1975-05-06
DE2255676A1 (de) 1973-05-24
DE2255676C2 (de) 1985-04-04
JPS4863685A (fr) 1973-09-04
FR2160545B1 (fr) 1980-08-14
IT968869B (it) 1974-03-20

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Legal Events

Date Code Title Description
ST Notification of lapse