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FR1601776A - Process for manufacturing integrated semiconductor circuits and circuits thus obtained - Google Patents

Process for manufacturing integrated semiconductor circuits and circuits thus obtained

Info

Publication number
FR1601776A
FR1601776A FR176116A FR176116A FR1601776A FR 1601776 A FR1601776 A FR 1601776A FR 176116 A FR176116 A FR 176116A FR 176116 A FR176116 A FR 176116A FR 1601776 A FR1601776 A FR 1601776A
Authority
FR
France
Prior art keywords
circuits
integrated semiconductor
manufacturing integrated
semiconductor circuits
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR176116A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of FR1601776A publication Critical patent/FR1601776A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P32/15—
    • H10P95/00—
    • H10W10/031—
    • H10W10/041—
    • H10W10/30—
    • H10W10/40—
    • H10W15/00—
    • H10W15/01—
FR176116A 1967-12-05 1968-11-29 Process for manufacturing integrated semiconductor circuits and circuits thus obtained Expired FR1601776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7803267 1967-12-05

Publications (1)

Publication Number Publication Date
FR1601776A true FR1601776A (en) 1970-09-14

Family

ID=13650454

Family Applications (1)

Application Number Title Priority Date Filing Date
FR176116A Expired FR1601776A (en) 1967-12-05 1968-11-29 Process for manufacturing integrated semiconductor circuits and circuits thus obtained

Country Status (10)

Country Link
AT (1) AT309533B (en)
BE (1) BE724868A (en)
CA (1) CA930478A (en)
CH (1) CH481490A (en)
DE (1) DE1812178B2 (en)
FR (1) FR1601776A (en)
GB (1) GB1251348A (en)
NL (1) NL143735B (en)
NO (1) NO123438B (en)
SE (1) SE354546B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2189871A1 (en) * 1972-06-19 1974-01-25 Ibm

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL166156C (en) * 1971-05-22 1981-06-15 Philips Nv SEMICONDUCTOR DEVICE CONTAINING AT LEAST ONE on a semiconductor substrate BODY MADE SEMICONDUCTOR LAYER WITH AT LEAST ONE ISOLATION ZONE WHICH ONE IN THE SEMICONDUCTOR LAYER COUNTERSUNk INSULATION FROM SHAPED INSULATING MATERIAL BY LOCAL THERMAL OXIDATION OF HALF OF THE SEMICONDUCTOR LAYER GUIDE MATERIALS CONTAIN AND METHOD FOR MANUFACTURING SAME.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2189871A1 (en) * 1972-06-19 1974-01-25 Ibm

Also Published As

Publication number Publication date
NL143735B (en) 1974-10-15
NL6817313A (en) 1969-06-09
DE1812178A1 (en) 1969-07-10
SE354546B (en) 1973-03-12
CA930478A (en) 1973-07-17
CH481490A (en) 1969-11-15
AT309533B (en) 1973-08-27
NO123438B (en) 1971-11-15
DE1812178B2 (en) 1978-11-09
BE724868A (en) 1969-05-16
GB1251348A (en) 1971-10-27

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Legal Events

Date Code Title Description
ST Notification of lapse