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FR1510057A - Transistors intégrés complémentaires npn et pnp à collecteurs isolés - Google Patents

Transistors intégrés complémentaires npn et pnp à collecteurs isolés

Info

Publication number
FR1510057A
FR1510057A FR86342A FR86342A FR1510057A FR 1510057 A FR1510057 A FR 1510057A FR 86342 A FR86342 A FR 86342A FR 86342 A FR86342 A FR 86342A FR 1510057 A FR1510057 A FR 1510057A
Authority
FR
France
Prior art keywords
pnp transistors
complementary integrated
integrated npn
collectors
isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR86342A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR86342A priority Critical patent/FR1510057A/fr
Priority to DE19671589661 priority patent/DE1589661A1/de
Priority to NL6716575A priority patent/NL6716575A/xx
Application granted granted Critical
Publication of FR1510057A publication Critical patent/FR1510057A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
FR86342A 1966-12-06 1966-12-06 Transistors intégrés complémentaires npn et pnp à collecteurs isolés Expired FR1510057A (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR86342A FR1510057A (fr) 1966-12-06 1966-12-06 Transistors intégrés complémentaires npn et pnp à collecteurs isolés
DE19671589661 DE1589661A1 (de) 1966-12-06 1967-12-02 Integrierte Schaltung mit wenigstens einem komplementaeren Transistorpaar mit isolierten Kollektoren
NL6716575A NL6716575A (fr) 1966-12-06 1967-12-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR86342A FR1510057A (fr) 1966-12-06 1966-12-06 Transistors intégrés complémentaires npn et pnp à collecteurs isolés

Publications (1)

Publication Number Publication Date
FR1510057A true FR1510057A (fr) 1968-01-19

Family

ID=8622044

Family Applications (1)

Application Number Title Priority Date Filing Date
FR86342A Expired FR1510057A (fr) 1966-12-06 1966-12-06 Transistors intégrés complémentaires npn et pnp à collecteurs isolés

Country Status (3)

Country Link
DE (1) DE1589661A1 (fr)
FR (1) FR1510057A (fr)
NL (1) NL6716575A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2016760A1 (de) * 1969-04-18 1970-11-05 N.V. Philips'gloeilampenfabrieken, Eindhoven (Niederlande) Halbleiteranordnung
US3956035A (en) * 1973-10-17 1976-05-11 Hans Herrmann Planar diffusion process for manufacturing monolithic integrated circuits
EP0040125B1 (fr) 1980-05-14 1983-11-30 Thomson-Csf Dispositif de protection contre les courants de fuite dans des circuits intégrés

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027183A (en) * 1990-04-20 1991-06-25 International Business Machines Isolated semiconductor macro circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2016760A1 (de) * 1969-04-18 1970-11-05 N.V. Philips'gloeilampenfabrieken, Eindhoven (Niederlande) Halbleiteranordnung
US3956035A (en) * 1973-10-17 1976-05-11 Hans Herrmann Planar diffusion process for manufacturing monolithic integrated circuits
EP0040125B1 (fr) 1980-05-14 1983-11-30 Thomson-Csf Dispositif de protection contre les courants de fuite dans des circuits intégrés

Also Published As

Publication number Publication date
DE1589661A1 (de) 1970-04-30
NL6716575A (fr) 1968-06-07

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