FR1490051A - Improvements to semiconductor rectifier devices - Google Patents
Improvements to semiconductor rectifier devicesInfo
- Publication number
- FR1490051A FR1490051A FR73403A FR73403A FR1490051A FR 1490051 A FR1490051 A FR 1490051A FR 73403 A FR73403 A FR 73403A FR 73403 A FR73403 A FR 73403A FR 1490051 A FR1490051 A FR 1490051A
- Authority
- FR
- France
- Prior art keywords
- semiconductor rectifier
- rectifier devices
- devices
- semiconductor
- rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR73403A FR1490051A (en) | 1965-08-18 | 1966-08-18 | Improvements to semiconductor rectifier devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3542865 | 1965-08-18 | ||
| FR73403A FR1490051A (en) | 1965-08-18 | 1966-08-18 | Improvements to semiconductor rectifier devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1490051A true FR1490051A (en) | 1967-07-28 |
Family
ID=26172632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR73403A Expired FR1490051A (en) | 1965-08-18 | 1966-08-18 | Improvements to semiconductor rectifier devices |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1490051A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1909332A1 (en) * | 2006-10-05 | 2008-04-09 | ABB Technology AG | Power Semiconductor device |
-
1966
- 1966-08-18 FR FR73403A patent/FR1490051A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1909332A1 (en) * | 2006-10-05 | 2008-04-09 | ABB Technology AG | Power Semiconductor device |
| WO2008040733A1 (en) * | 2006-10-05 | 2008-04-10 | Abb Technology Ag | Power semiconductor device |
| US9048340B2 (en) | 2006-10-05 | 2015-06-02 | Abb Technology Ag | Power semiconductor device with a reduced dynamic avalanche effect and subsequent local heating |
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