FR1303035A - Structure semi-conductrice à plus de quatre régions - Google Patents
Structure semi-conductrice à plus de quatre régionsInfo
- Publication number
- FR1303035A FR1303035A FR868773A FR868773A FR1303035A FR 1303035 A FR1303035 A FR 1303035A FR 868773 A FR868773 A FR 868773A FR 868773 A FR868773 A FR 868773A FR 1303035 A FR1303035 A FR 1303035A
- Authority
- FR
- France
- Prior art keywords
- regions
- semiconductor structure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- H10P95/50—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR868773A FR1303035A (fr) | 1961-07-24 | 1961-07-24 | Structure semi-conductrice à plus de quatre régions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR868773A FR1303035A (fr) | 1961-07-24 | 1961-07-24 | Structure semi-conductrice à plus de quatre régions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1303035A true FR1303035A (fr) | 1962-09-07 |
Family
ID=8759889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR868773A Expired FR1303035A (fr) | 1961-07-24 | 1961-07-24 | Structure semi-conductrice à plus de quatre régions |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1303035A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3284681A (en) * | 1964-07-01 | 1966-11-08 | Gen Electric | Pnpn semiconductor switching devices with stabilized firing characteristics |
| US3317801A (en) * | 1963-06-19 | 1967-05-02 | Jr Freeman D Shepherd | Tunneling enhanced transistor |
| DE1266891B (de) * | 1963-05-31 | 1968-04-25 | Gen Electric | Strahlungsempfindliches P+NN+_Halbleiterbauelement |
-
1961
- 1961-07-24 FR FR868773A patent/FR1303035A/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1266891B (de) * | 1963-05-31 | 1968-04-25 | Gen Electric | Strahlungsempfindliches P+NN+_Halbleiterbauelement |
| US3317801A (en) * | 1963-06-19 | 1967-05-02 | Jr Freeman D Shepherd | Tunneling enhanced transistor |
| US3284681A (en) * | 1964-07-01 | 1966-11-08 | Gen Electric | Pnpn semiconductor switching devices with stabilized firing characteristics |
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