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FR1349963A - Micro-élément semi-conducteur à effet de champ et procédé pour sa fabrication - Google Patents

Micro-élément semi-conducteur à effet de champ et procédé pour sa fabrication

Info

Publication number
FR1349963A
FR1349963A FR914159A FR914159A FR1349963A FR 1349963 A FR1349963 A FR 1349963A FR 914159 A FR914159 A FR 914159A FR 914159 A FR914159 A FR 914159A FR 1349963 A FR1349963 A FR 1349963A
Authority
FR
France
Prior art keywords
microelement
manufacture
field
effect semiconductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR914159A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL299911D priority Critical patent/NL299911A/xx
Priority claimed from GB1827351A external-priority patent/GB713264A/en
Priority to FR1060725D priority patent/FR1060725A/fr
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR914159A priority patent/FR1349963A/fr
Priority to GB42292/63A priority patent/GB1060725A/en
Priority to NL63299911A priority patent/NL142019B/xx
Priority to DE1464525A priority patent/DE1464525C3/de
Application granted granted Critical
Publication of FR1349963A publication Critical patent/FR1349963A/fr
Priority to US00168776A priority patent/US3772098A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00—Inking and printing with a printer's forme
    • B41M1/14—Multicolour printing
    • B41M1/20—Multicolour printing by applying differently-coloured inks simultaneously to different parts of the printing surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
FR914159A 1951-08-02 1962-11-02 Micro-élément semi-conducteur à effet de champ et procédé pour sa fabrication Expired FR1349963A (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL299911D NL299911A (fr) 1951-08-02
FR1060725D FR1060725A (fr) 1951-08-02 1952-08-01 Procédé d'impression en plusieurs couleurs
FR914159A FR1349963A (fr) 1951-08-02 1962-11-02 Micro-élément semi-conducteur à effet de champ et procédé pour sa fabrication
GB42292/63A GB1060725A (en) 1951-08-02 1963-10-25 Field effect semi-conductor microcomponent and method for the manufacturing thereof
NL63299911A NL142019B (nl) 1951-08-02 1963-10-30 Werkwijze voor het vervaardigen van een veldeffecttransistor en veldeffecttransistor vervaardigd volgens deze werkwijze.
DE1464525A DE1464525C3 (de) 1951-08-02 1963-10-31 Verfahren zum Herstellen eines Halbleiterbauelements mit Feldeffekt
US00168776A US3772098A (en) 1951-08-02 1971-08-03 Method of manufacturing a field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1827351A GB713264A (en) 1951-08-02 1951-08-02 Multi-colour printing method
FR914159A FR1349963A (fr) 1951-08-02 1962-11-02 Micro-élément semi-conducteur à effet de champ et procédé pour sa fabrication

Publications (1)

Publication Number Publication Date
FR1349963A true FR1349963A (fr) 1964-01-24

Family

ID=26198223

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1060725D Expired FR1060725A (fr) 1951-08-02 1952-08-01 Procédé d'impression en plusieurs couleurs
FR914159A Expired FR1349963A (fr) 1951-08-02 1962-11-02 Micro-élément semi-conducteur à effet de champ et procédé pour sa fabrication

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1060725D Expired FR1060725A (fr) 1951-08-02 1952-08-01 Procédé d'impression en plusieurs couleurs

Country Status (5)

Country Link
US (1) US3772098A (fr)
DE (1) DE1464525C3 (fr)
FR (2) FR1060725A (fr)
GB (1) GB1060725A (fr)
NL (2) NL142019B (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3358195A (en) * 1964-07-24 1967-12-12 Motorola Inc Remote cutoff field effect transistor
US3378737A (en) * 1965-06-28 1968-04-16 Teledyne Inc Buried channel field effect transistor and method of forming
US3484865A (en) * 1967-02-28 1969-12-16 Philips Corp Integrated semiconductor device including igfet with interdigitated structure
DE1764401A1 (de) * 1967-06-08 1971-05-13 Philips Nv Halbleiterbauelement mit einem Feldeffekttransistor mit isolierter Torelektrode und Verfahren zu seiner Herstellung
US4048647A (en) * 1976-09-10 1977-09-13 Northern Telecom Limited Solid state disconnect device
DE3405600A1 (de) * 1983-02-16 1984-08-16 Mitsubishi Denki K.K., Tokio/Tokyo Halbleitereinrichtung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546068B2 (fr) * 1973-05-22 1980-11-21
US5462767A (en) * 1985-09-21 1995-10-31 Semiconductor Energy Laboratory Co., Ltd. CVD of conformal coatings over a depression using alkylmetal precursors
TWI445175B (zh) * 2011-11-11 2014-07-11 Au Optronics Corp 主動元件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
NL267831A (fr) * 1960-08-17
BE637065A (fr) * 1962-09-07
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3378738A (en) * 1965-08-25 1968-04-16 Trw Inc Traveling wave transistor
NL6807317A (fr) * 1968-05-23 1969-11-25

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3358195A (en) * 1964-07-24 1967-12-12 Motorola Inc Remote cutoff field effect transistor
US3378737A (en) * 1965-06-28 1968-04-16 Teledyne Inc Buried channel field effect transistor and method of forming
US3484865A (en) * 1967-02-28 1969-12-16 Philips Corp Integrated semiconductor device including igfet with interdigitated structure
DE1764401A1 (de) * 1967-06-08 1971-05-13 Philips Nv Halbleiterbauelement mit einem Feldeffekttransistor mit isolierter Torelektrode und Verfahren zu seiner Herstellung
US4048647A (en) * 1976-09-10 1977-09-13 Northern Telecom Limited Solid state disconnect device
DE3405600A1 (de) * 1983-02-16 1984-08-16 Mitsubishi Denki K.K., Tokio/Tokyo Halbleitereinrichtung

Also Published As

Publication number Publication date
US3772098A (en) 1973-11-13
DE1464525C3 (de) 1975-05-07
DE1464525B2 (de) 1971-11-11
NL142019B (nl) 1974-04-16
FR1060725A (fr) 1954-04-05
DE1464525A1 (de) 1968-12-05
NL299911A (fr)
GB1060725A (en) 1967-03-08

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