[go: up one dir, main page]

FR1261240A - Zone melting process, without crucible, of semiconductor bars, in particular in silicon - Google Patents

Zone melting process, without crucible, of semiconductor bars, in particular in silicon

Info

Publication number
FR1261240A
FR1261240A FR821989A FR821989A FR1261240A FR 1261240 A FR1261240 A FR 1261240A FR 821989 A FR821989 A FR 821989A FR 821989 A FR821989 A FR 821989A FR 1261240 A FR1261240 A FR 1261240A
Authority
FR
France
Prior art keywords
crucible
silicon
melting process
zone melting
semiconductor bars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR821989A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1261240A publication Critical patent/FR1261240A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR821989A 1959-05-08 1960-03-21 Zone melting process, without crucible, of semiconductor bars, in particular in silicon Expired FR1261240A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES62919A DE1094711B (en) 1959-05-08 1959-05-08 Method for crucible-free zone melting of semiconductor rods, in particular made of silicon

Publications (1)

Publication Number Publication Date
FR1261240A true FR1261240A (en) 1961-05-19

Family

ID=25995673

Family Applications (1)

Application Number Title Priority Date Filing Date
FR821989A Expired FR1261240A (en) 1959-05-08 1960-03-21 Zone melting process, without crucible, of semiconductor bars, in particular in silicon

Country Status (6)

Country Link
US (1) US3113841A (en)
CH (1) CH386116A (en)
DE (1) DE1094711B (en)
FR (1) FR1261240A (en)
GB (1) GB907764A (en)
NL (2) NL112832C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133150C (en) * 1959-12-23
DE1165882B (en) * 1960-02-05 1964-03-19 Philips Patentverwaltung Device for executing rotary movements on rod-shaped bodies, in particular on semiconductor bodies
DE1209550B (en) * 1961-03-20 1966-01-27 Licentia Gmbh Holder for bars to be melted into zones
DE1444530B2 (en) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Method and device for producing rod-shaped, single-crystal semiconductor material
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
DE1265708B (en) * 1965-11-30 1968-04-11 Siemens Ag Device for crucible-free zone melting
DE2322969C3 (en) * 1973-05-07 1980-10-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for holding the rod ends during crucible-free zone melting
WO2025093146A1 (en) 2023-10-31 2025-05-08 University Of Latvia A technique for replenishing molten, levitating material by growing monocrystalline, polycrystalline, or other solid-state structures under electromagnetic levitation conditions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
FR1119039A (en) * 1954-03-09 1956-06-14 Siemens Ag Process for the preparation of a crystalline body, in particular a semiconductor body
AT207857B (en) * 1955-01-14 Degussa Process for the production of hydrocyanic acid by reacting hydrocarbons with ammonia in the catalyst bed
BE548227A (en) * 1955-07-22
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2990261A (en) * 1958-12-11 1961-06-27 Bell Telephone Labor Inc Processing of boron compact

Also Published As

Publication number Publication date
NL112832C (en)
US3113841A (en) 1963-12-10
DE1094711B (en) 1960-12-15
CH386116A (en) 1964-12-31
NL251304A (en)
GB907764A (en) 1962-10-10

Similar Documents

Publication Publication Date Title
FR1261240A (en) Zone melting process, without crucible, of semiconductor bars, in particular in silicon
FR77520E (en) Very high purity silicon preparation process
FR1378964A (en) Process for the preparation of cyclic diaza-compounds, in particular diaza-cycloalkanes
FR77649E (en) Device for crucible-free zone melting of semiconductor bars, in particular silicon bars
FR1255773A (en) Device for crucible-free zone melting of semiconductor bars, in particular silicon bars
CH378546A (en) Device for crucible-free zone melting of semiconductor rods, in particular silicon rods
BE589859A (en) Device for melting in zones without crucible of semiconductor bars, in particular of silicon bars
BE609336A (en) Process for melting in zones without crucible of a semiconductor bar, in particular in silicon
BE610603A (en) Process for manufacturing a single crystal of silicon, free from dislocations, by the crucible-free zone melting method
FR1344448A (en) Continuous manufacturing process of so-called pouches
FR1202128A (en) Process for the zone and crucible-less melting treatment of semiconductor materials such as silicon
FR1266863A (en) Process for zone and crucible-less melting of semiconductor materials
FR1246889A (en) Process for obtaining very pure silicon ingots
FR1255225A (en) Device for zone melting, without crucible, of semiconductor bars
DK120434B (en) Apparatus for crucible zone melting of a crystalline rod, in particular semiconductor rod.
DK116200B (en) Process for culturing rod-shaped, offset single crystals, in particular silicon, by crucible-free zone melting
BE594593A (en) Process for zone melting, free from crucible of semiconductor material
CA818425A (en) Method of crucible-free zone melting of semiconductor material, particularly silicon
FR1321165A (en) Process for the preparation of single crystals, in particular of semiconductor material
FR1191046A (en) Refractory composition, its manufacturing process and its applications
FR1264261A (en) Device for zone melting, without crucible, of bars in semiconductor material arranged vertically
FR1234746A (en) Very high purity silicon preparation process
CA802163A (en) Method of crucible-free zone melting crystalline rods, especially of semiconductor material
FR1266809A (en) Zone and crucible-less melting process of semiconductor materials
FR1467801A (en) Process for the preparation of novel thiosemicarbazones, in particular beta-thiosemicarbazones of 1-amino-alkyl-isatins