FI831227L - Diod foer monolitintegrerad krets - Google Patents

Diod foer monolitintegrerad krets

Info

Publication number: FI831227L
Authority: FI; Finland
Prior art keywords: monolitintegrerad; krets; diod; foer; monolitintegrerad krets
Prior art date: 1981-08-25

Application number

FI831227A

Other languages

English (en)

Other versions

FI71039B (fi

FI831227A0 (fi

FI71039C (fi

Inventor

Klas-Haokan Eklund

Original Assignee

Ericsson Telefon Ab L M

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-08-25

Filing date

1983-04-12

Publication date

1983-04-12

1983-04-12 Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M

1983-04-12 Publication of FI831227A0 publication Critical patent/FI831227A0/fi

1983-04-12 Publication of FI831227L publication Critical patent/FI831227L/fi

1986-07-18 Publication of FI71039B publication Critical patent/FI71039B/fi

1986-10-27 Application granted granted Critical

1986-10-27 Publication of FI71039C publication Critical patent/FI71039C/fi

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
- H10W10/031—
- H10W10/30—
- H10W20/021—

FI831227A 1981-08-25 1983-04-12 Diod foer monolitintegrerad krets FI71039C (fi)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
SE8105040		1981-08-25
SE8105040A SE427598B (sv)	1981-08-25	1981-08-25	Halvledardiod avsedd att inga i integrerade kretsar
PCT/SE1982/000266 WO1983000776A1 (en)	1981-08-25	1982-08-19	Diode for monolithic integrated circuit
SE8200266		1982-08-19

Publications (4)

Publication Number	Publication Date
FI831227A0 FI831227A0 (fi)	1983-04-12
FI831227L true FI831227L (fi)	1983-04-12
FI71039B FI71039B (fi)	1986-07-18
FI71039C FI71039C (fi)	1986-10-27

Family

ID=20344426

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FI831227A FI71039C (fi)	1981-08-25	1983-04-12	Diod foer monolitintegrerad krets

Country Status (7)

Country	Link
EP (1)	EP0086210B1 (fi)
DE (1)	DE3264667D1 (fi)
DK (1)	DK157468C (fi)
FI (1)	FI71039C (fi)
IT (1)	IT1207305B (fi)
SE (1)	SE427598B (fi)
WO (1)	WO1983000776A1 (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1197279B (it) *	1986-09-25	1988-11-30	Sgs Microelettronica Spa	Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
DE3832731A1 (de) *	1988-09-27	1990-03-29	Asea Brown Boveri	Leistungshalbleiterdiode
DE3832732A1 (de) *	1988-09-27	1990-03-29	Asea Brown Boveri	Leistungshalbleiterdiode
DE69427904T2 (de) *	1994-05-31	2002-04-04	Stmicroelectronics S.R.L., Agrate Brianza	Integrierte Halbleiterdiode
JP4597284B2 (ja) *	1999-04-12	2010-12-15	ルネサスエレクトロニクス株式会社	半導体装置およびその製造方法
GB2354879B (en) *	1999-08-11	2004-05-12	Mitel Semiconductor Ltd	A semiconductor device
JP2003509867A (ja) *	1999-09-16	2003-03-11	コーニンクレッカフィリップスエレクトロニクスエヌヴィ	半導体装置
JP4065104B2 (ja) *	2000-12-25	2008-03-19	三洋電機株式会社	半導体集積回路装置およびその製造方法
US7528459B2 (en) *	2003-05-27	2009-05-05	Nxp B.V.	Punch-through diode and method of processing the same
CN102623511B (zh) *	2011-01-26	2015-12-02	上海华虹宏力半导体制造有限公司	功率二极管
US9391159B2 (en) *	2012-04-03	2016-07-12	Taiwan Semiconductor Manufacturing Company, Ltd.	Triple well isolated diode and method of making

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3930909A (en) *	1966-10-21	1976-01-06	U.S. Philips Corporation	Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US4027325A (en) *	1975-01-30	1977-05-31	Sprague Electric Company	Integrated full wave diode bridge rectifier
US4117507A (en) *	1976-06-22	1978-09-26	Sgs-Ates Componeti Elettronici S.P.A.	Diode formed in integrated-circuit structure
US4272307A (en) *	1979-03-12	1981-06-09	Sprague Electric Company	Integrated circuit with I2 L and power transistors and method for making
JPS55132068A (en) *	1979-03-30	1980-10-14	Ibm	Pnp bipolar transistor
JPS55134983A (en) *	1979-04-09	1980-10-21	Ibm	Surface breakdown zener diode

1981
- 1981-08-25 SE SE8105040A patent/SE427598B/sv not_active IP Right Cessation
1982
- 1982-08-19 WO PCT/SE1982/000266 patent/WO1983000776A1/en not_active Ceased
- 1982-08-19 EP EP82902481A patent/EP0086210B1/en not_active Expired
- 1982-08-19 DE DE8282902481T patent/DE3264667D1/de not_active Expired
- 1982-08-25 IT IT8222971A patent/IT1207305B/it active
1983
- 1983-04-12 FI FI831227A patent/FI71039C/fi not_active IP Right Cessation
- 1983-04-22 DK DK179383A patent/DK157468C/da not_active IP Right Cessation

Also Published As

Publication number	Publication date
IT1207305B (it)	1989-05-17
FI71039B (fi)	1986-07-18
WO1983000776A1 (en)	1983-03-03
EP0086210A1 (en)	1983-08-24
SE8105040L (sv)	1983-02-26
SE427598B (sv)	1983-04-18
DK157468C (da)	1990-05-21
FI831227A0 (fi)	1983-04-12
DK157468B (da)	1990-01-08
DE3264667D1 (en)	1985-08-14
DK179383D0 (da)	1983-04-22
EP0086210B1 (en)	1985-07-10
FI71039C (fi)	1986-10-27
DK179383A (da)	1983-04-22
IT8222971A0 (it)	1982-08-25

Publication	Publication Date	Title
AR228298A1 (es)	1983-02-15	Cubo-rompecabezas
AT382116B (de)	1987-01-12	Geraeuschgedaempftes schienenrad
ATA518981A (de)	1983-04-15	Schipaar
BE889765A (fr)	1981-11-16	Stijgerelement
FI820188L (fi)	1982-07-23	Monteringsstoed foer ljusemitterande diod i en belyst tryckknappselomkopplare
BE893877A (fr)	1982-11-16	Mond-en tandverzorgingsmiddel
FI831227L (fi)	1983-04-12	Diod foer monolitintegrerad krets
AT384100B (de)	1987-09-25	Drehrohrofen
BE891918A (fr)	1982-07-28	Draaibare schoorsteenkap
BE891837A (fr)	1982-05-17	Anthracycline-glycosides
AT379276B (de)	1985-12-10	Hoergeraet
AT385733B (de)	1988-05-10	Skibob
AT374656B (de)	1984-05-25	Maishaecksler
ATA243482A (de)	1986-03-15	Mauerstein
BE893857A (fr)	1982-11-16	Comptoir-vitrine
AT371306B (de)	1983-06-27	Hoergeraet
AT368631B (de)	1982-10-25	Zweibein
ATA492281A (de)	1985-08-15	Karniese
BE893123A (fr)	1982-11-08	Thienyl- et benzothienyl-t-butylamino-phenoxypropanols
ES259215Y (es)	1982-07-01	Dije-estuche perfeccionado
ES255352Y (es)	1981-11-16	Estuche antihumedad
AT374934B (de)	1984-06-12	Kapodaster
AR225979A1 (es)	1982-05-14	Tablestacado rompeolas
BR6100519U (pt)	1981-08-18	Petrecho domestico
BR6100820U (pt)	1983-01-25	Taxi-registro

Legal Events

Date	Code	Title	Description
2004-08-31	MA	Patent expired	Owner name: OY L M ERICSSON AB