FI20105902A0 - Device - Google Patents
DeviceInfo
- Publication number
- FI20105902A0 FI20105902A0 FI20105902A FI20105902A FI20105902A0 FI 20105902 A0 FI20105902 A0 FI 20105902A0 FI 20105902 A FI20105902 A FI 20105902A FI 20105902 A FI20105902 A FI 20105902A FI 20105902 A0 FI20105902 A0 FI 20105902A0
- Authority
- FI
- Finland
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20105902A FI20105902A0 (en) | 2010-08-30 | 2010-08-30 | Device |
| DE112011102856.3T DE112011102856B4 (en) | 2010-08-30 | 2011-08-29 | arrangement |
| PCT/FI2011/050747 WO2012028779A1 (en) | 2010-08-30 | 2011-08-29 | Apparatus |
| TW100130878A TW201219117A (en) | 2010-08-30 | 2011-08-29 | Apparatus |
| CN201180041762.0A CN103080374B (en) | 2010-08-30 | 2011-08-29 | Device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20105902A FI20105902A0 (en) | 2010-08-30 | 2010-08-30 | Device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FI20105902A0 true FI20105902A0 (en) | 2010-08-30 |
Family
ID=42669406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20105902A FI20105902A0 (en) | 2010-08-30 | 2010-08-30 | Device |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN103080374B (en) |
| DE (1) | DE112011102856B4 (en) |
| FI (1) | FI20105902A0 (en) |
| TW (1) | TW201219117A (en) |
| WO (1) | WO2012028779A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI125341B (en) * | 2012-07-09 | 2015-08-31 | Beneq Oy | Apparatus and method for processing substrates |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4597986A (en) * | 1984-07-31 | 1986-07-01 | Hughes Aircraft Company | Method for photochemical vapor deposition |
| JP3103186B2 (en) * | 1992-03-19 | 2000-10-23 | 富士通株式会社 | Atomic layer epitaxy apparatus and atomic layer epitaxy method |
| MX9303141A (en) | 1992-05-28 | 1994-04-29 | Polar Materials Inc | METHODS AND DEVICES FOR DEPOSITING BARRIER COATINGS. |
| JP2004014953A (en) * | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | Processing system and processing method |
| US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
| US20070292974A1 (en) * | 2005-02-17 | 2007-12-20 | Hitachi Kokusai Electric Inc | Substrate Processing Method and Substrate Processing Apparatus |
| KR20060103640A (en) * | 2005-03-28 | 2006-10-04 | 삼성전자주식회사 | Semi-conductor manufacturing apparatus |
| RU2368555C1 (en) | 2005-05-27 | 2009-09-27 | Кирин Бир Кабусики Кайся | Device for manufacturing of plastic container with gas barrier, method for manufacturing of this container and container |
| JP2007111678A (en) * | 2005-10-24 | 2007-05-10 | Sekisui Chem Co Ltd | Plasma processing equipment for linear workpieces |
| CN101589171A (en) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
| US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
| JP2010073822A (en) * | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | Film deposition apparatus, film deposition method, program and computer readable storage medium |
| US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
-
2010
- 2010-08-30 FI FI20105902A patent/FI20105902A0/en not_active Application Discontinuation
-
2011
- 2011-08-29 TW TW100130878A patent/TW201219117A/en unknown
- 2011-08-29 WO PCT/FI2011/050747 patent/WO2012028779A1/en not_active Ceased
- 2011-08-29 CN CN201180041762.0A patent/CN103080374B/en active Active
- 2011-08-29 DE DE112011102856.3T patent/DE112011102856B4/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE112011102856B4 (en) | 2023-03-23 |
| TW201219117A (en) | 2012-05-16 |
| CN103080374A (en) | 2013-05-01 |
| CN103080374B (en) | 2016-04-13 |
| WO2012028779A1 (en) | 2012-03-08 |
| DE112011102856T5 (en) | 2013-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD | Application lapsed |