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FI20040966L - Surface accumulation structure for radiation detector - Google Patents

Surface accumulation structure for radiation detector Download PDF

Info

Publication number
FI20040966L
FI20040966L FI20040966A FI20040966A FI20040966L FI 20040966 L FI20040966 L FI 20040966L FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 L FI20040966 L FI 20040966L
Authority
FI
Finland
Prior art keywords
substrate
work function
layer
electron affinity
radiation detector
Prior art date
Application number
FI20040966A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20040966A0 (en
FI20040966A7 (en
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20040966A priority Critical patent/FI20040966L/en
Publication of FI20040966A0 publication Critical patent/FI20040966A0/en
Priority to PCT/FI2005/050242 priority patent/WO2006005803A1/en
Publication of FI20040966A7 publication Critical patent/FI20040966A7/en
Publication of FI20040966L publication Critical patent/FI20040966L/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The detector comprises a substrate (300) of a first semiconductor material. At least one pixel (312-315) and a surface contact (310) have been formed on the first surface (301) and a layer (320) of a second semiconductor material has been formed on the second surface (302) of the substrate (300). A reverse bias voltage (350) is connected between the surface contact (310) and the at least one pixel (312-315) in order to create a depletion region (332) in the substrate (300). The work function of an n-type layer (320) must be smaller than the work function of the substrate (300) and the electron affinity of said layer (320) must be smaller than the electron affinity of the substrate (300). The work function of a p-type layer (320) must be bigger than the work function of the substrate (300) and the sum of the electron affinity and the band gap potential of said layer (320) must be bigger than the sum of the electron affinity and a band gap potential of the substrate (300).
FI20040966A 2004-07-09 2004-07-09 Surface accumulation structure for radiation detector FI20040966L (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966L (en) 2004-07-09 2004-07-09 Surface accumulation structure for radiation detector
PCT/FI2005/050242 WO2006005803A1 (en) 2004-07-09 2005-06-28 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966L (en) 2004-07-09 2004-07-09 Surface accumulation structure for radiation detector

Publications (3)

Publication Number Publication Date
FI20040966A0 FI20040966A0 (en) 2004-07-09
FI20040966A7 FI20040966A7 (en) 2006-01-10
FI20040966L true FI20040966L (en) 2006-01-10

Family

ID=32749186

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20040966A FI20040966L (en) 2004-07-09 2004-07-09 Surface accumulation structure for radiation detector

Country Status (2)

Country Link
FI (1) FI20040966L (en)
WO (1) WO2006005803A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2950346A2 (en) 2004-08-20 2015-12-02 Artto Aurola Semiconductor radiation detector with a modified internal gate structure

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20051236A0 (en) 2005-12-01 2005-12-01 Artto Mikael Aurola Semiconductor gadget
DE102007055676A1 (en) * 2007-11-21 2009-06-04 Siemens Ag Radiation converter for radiation detector of X-ray computer tomography, has counter electrode attached on side of conversion layer, where side is opposite to other side and conversion layer comprises deletion electrodes and contacts
FR2972296B1 (en) * 2011-03-04 2013-11-15 Soc Fr Detecteurs Infrarouges Sofradir DETECTION MATRIX WITH IMPROVED POLARIZATION CONDITIONS AND METHOD FOR MANUFACTURING THE SAME
US8669630B2 (en) 2011-03-04 2014-03-11 Societe Francaise de Detecteurs Infrarouges—Sofradir Detection matrix with improved biasing conditions and fabrication method
FR2972295B1 (en) * 2011-03-04 2013-07-19 Soc Fr Detecteurs Infrarouges Sofradir DETECTION MATRIX WITH IMPROVED POLARIZATION CONDITIONS AND METHOD FOR MANUFACTURING THE SAME
US9224768B2 (en) * 2013-08-05 2015-12-29 Raytheon Company Pin diode structure having surface charge suppression
WO2019123591A1 (en) * 2017-12-21 2019-06-27 オリンパス株式会社 Semiconductor device
CN115498063A (en) * 2022-07-25 2022-12-20 核芯光电科技(山东)有限公司 Si-PIN detection device based on grid structure and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
US5808329A (en) * 1996-07-15 1998-09-15 Raytheon Company Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials
US6259085B1 (en) * 1996-11-01 2001-07-10 The Regents Of The University Of California Fully depleted back illuminated CCD
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2950346A2 (en) 2004-08-20 2015-12-02 Artto Aurola Semiconductor radiation detector with a modified internal gate structure

Also Published As

Publication number Publication date
FI20040966A0 (en) 2004-07-09
FI20040966A7 (en) 2006-01-10
WO2006005803A1 (en) 2006-01-19

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